ES1006FL [SENO]
1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE;
| 型号： | ES1006FL |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE 快速恢复二极管 光电二极管 |
| 文件： | 总2页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
ES1000FL - ES1006FL
1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE
Features
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Glass passivated device
SOD - 123FL
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30 A Peak
Low Power Loss
Cathode Band
Top View
Ultra-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
2.6±0.2
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Mechanical Data
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Case: SOD-123FL, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
0.7±0.3
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Weight: 0.01 grams (approx.)
Lead Free: For RoHS / Lead Free Version
3.6±0.2
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
ES1000FLES1001FLES1002FLES1003FLES1004FL ES1005FLES1006FL
UNITS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
300
210
400
280
500
350
600
420
V
V
R(RMS)
V
A
RMS Reverse Voltage
Average Rectified Output Current
@TL = 100°C
IO
1.0
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
1.3
1.7
Forward Voltage
@IF = 1.0A
VFM
IRM
1.0
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
2.0
500
µA
35
4
t
rr
nS
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 2)
Cj
pF
Rꢀ
JL
30
°C/W
°C
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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ES1000FL – ES1006FL
1 of 2
Zibo Seno Electronic Engineering Co., Ltd.
ES1000FL - ES1006FL
1.00
10
0.75
0.50
0.25
1.0
Single phase half wave
Resistive or Inductive load
0.1
Tj = 25°C
Pulse width = 300 µs
0
0.01
100
0
25
50
75
100 125
150 175
0.6
0.8
1.0
1.2
1.4
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
30
Tj = 25°C
f = 1MHz
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
20
10
10
1
0
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
(-)
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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ES1000FL – ES1006FL
2 of 2
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