HDBL257G [SENO]

2.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER;


型号：	HDBL257G
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	2.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
文件：	总2页 (文件大小：152K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

HDBL251G – HDBL257G

2.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

Features

ꢀ

Glass Passivated Die Construction

ꢀ

Low Forward Voltage Drop

High Current Capability

High Surge Current Capability

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

DBLS

Min

Dim

Max

7.90

6.50

—

Mechanical Data

7.40

6.20

0.25

0.08

9.30

1.02

8.00

2.15

5.00

0.90

DBLS

, Molded Plastic

ꢀ

Case:

ꢀ

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

0.33

10.30

1.53

8.51

3.40

5.20

1.20

ꢀ

Polarity: As Marked on Case

Weight: 0.38 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

HDBL HDBL HDBL HDBL HDBL HDBL HDBL

251G 252G 253G 254G 255G 256G 257G

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RW^M

100

200

140

400

600

420

800

560

1000

800

RMS Reverse Voltage

V^R(RMS)

I^O

280

2.0

Average Rectified Output Current

@T_L= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 2.0A

V^FM

I^RM

1.0

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

500

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

t^rr

C^j

5 0

R^ꢀ^JL

T^j,T^STG

°C/W

°C

Operating and Storage Temperature Range

-65 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

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HDBL251G - HDBL257G

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Zibo Seno Electronic Engineering Co., Ltd.

HDBL251G – HDBL257G

2.5

60 Hz Resistive or

T_j= 25°C

Inductive load

Pulse Width = 300µs

2% duty cycle

2.0

1.5

1.0

0.1

0.01

100

120

140

0.8

0.4

1.0

1.4

0.6

1.2

T_A, AMBIENT TEMPERATURE (°C)

Fig. 1 Output Current Derating Curve

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typ Forward Characteristics (per element)

100

T_j= 25°c

Single half-sine-Wave

(JEDEC Method)

f = 1.0 Mhz

V_sig= 50 mV p-p

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Forward Surge Current

Fig. 4 Typ Junction Capacitance (per element)

100

T_j= 125°C

1.0

T_j= 25°C

0.1

0.01

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typ Reverse Characteristics (per element)

Fig. 5

Recovery

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HDBL251G - HDBL257G

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