MBR20L200CT [SENO]
20.0A SCHOTTKY BARRIER DIODE;
| 型号： | MBR20L200CT |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 20.0A SCHOTTKY BARRIER DIODE 二极管 |
| 文件： | 总2页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co.,Ltd.
MBR20L40CT – MBR20L200CT
20.0A SCHOTTKY BARRIER DIODE
Features
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!
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Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
For Use in Low Voltage Application
Guard Ring Die Construction
Plastic Case Material has UL Flammability
Cꢀ lꢀassification Rating 94V-O
ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
TO-220AB
TO-220AB
Min
L
Dim
A
B
C
D
E
Max
15.90
10.70
3.43
B
M
13.90
9.60
C
D
E
2.54
K
A
5.75
6.85
3.56
4.56
Mechanical Data
!
!
1
2
3
G
H
J
12.70
2.29
14.73
2.79
Case:TO-220AB, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
G
0.51
1.14
J
N
K
L
3.53Æ 4.09Æ
!
!
!
Polarity: See Diagram
3.56
1.10
0.30
2.03
4.83
1.40
0.64
2.92
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version
H
H
P
M
N
P
Pin 1 +
Pin 2 -
Pin 3 +
+
Case
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
MBR
MBR
MBR
MBR
MBR
MBR
Units
Characteristic
Symbol
20L40 20L45 20L50 20L60 20L100 20L150 20L200
CT
40
CT
CT
50
CT
60
CT
CT
150
CT
200
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
100
V
RMS Reverse Voltage
VR(RMS)
IO
28
31
35
42
20.0
70
105
140
V
A
Average Rectified Output Current @TL = 75°C
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
FSM
A
I
200
FM
0.45
350
0.55
0.70
0.85
V
Forward Voltage
@IF = 20A
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.1
20
IRM
mA
280
j
pF
°C/W
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
C
200
2.0
RꢀJA
3.0
-55 to +150
Tj, TSTG
-55 to +175
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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MBR20L40CT-MBR20L200CT
1 of 2
ꢀ ꢀ
Zibo Seno Electronic Engineering Co.,Ltd.
MBR20L40CT – MBR20L200CT
20.0
240
= 40 - 100V
=150 - 200V
16.0
12.0
210
8.3ms Single
Half Since-Wave
JEDEC Method
180
150
120
8.0
90
RESISTIVE OR
INDUCTIVE LOAD
4.0
0
60
30
0
0
20
40
60
80
100 120 140 160 180
1
2
5
10
20
50
100
LEAD TEMPERATURE, OC
NO. OF CYCLE AT 60Hz
Fig.2- MAXIMUM NON - REPETITIVE SURGE
CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
10
40
40-45V
TJ
=100OC
1.0
0.1
10
8
6
50-60V
4
TJ=
75OC
80-100V
2
150-200V
1.0
0.8
0.6
TJ=
25OC
0.4
0.01
0.001
TJ = 25OC
PulseWidth= 300us
0.2
1% Duty Cycle
0.1
0.9 1.0 1.1
0.4 0.5 0.6 0.7 0.8
0
20 40 60 80 100 120 140
FORWARD VOLTAGE, VOLTS
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
Fig.4- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
MBR20L40CT-MBR20L200CT
2 of 2
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