MBRF640 [SENO]
6.0 A SCHOTTKY BARRIER DIODE;
| 型号： | MBRF640 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 6.0 A SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
MBRF640 – MBRF6200
6.0 A SCHOTTKY BARRIER DIODE
Features
!
Schottky Barrier Chip
B
!
!
!
!
!
Ideally Suited for Automatic Assembly
ITO-220AC
Min
C
Low Power Loss, High Efficiency
For Use in Low Voltage Application
Guard Ring Die Construction
Plastic Case Material has UL Flammability
Cꢀ lꢀaꢀsꢀsꢀification Rating 94V-O
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Dim
A
B
C
D
E
Max
15.50
10.50
2.90
14.50
9.50
G
A
E
2.55
PIN1
3
3.30
4.30
13.00
0.30
14.00
0.90
D
F
G
H
I
3.00 Ø
6.30
3.80 Ø
7.30
Mechanical Data
F
!
!
Case: ITO-220AC, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
4.20
4.80
P
J
2.50
2.90
K
L
0.47
0.75
I
!
!
!
Polarity: See Diagram
2.50
3.10
Mounting Position: Any
P
4.88
5.28
L
H
All Dimensions in mm
Lead Free: For RoHS / Lead Free Version
PIN 1 +
PIN 3 -
+
Case
J
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
Units
Characteristic
Symbol
640
645
650
660
680
6100
6150
6200
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
45
50
60
80
100
150
200
V
RMS Reverse Voltage
VR(RMS)
IO
28
31
35
42
56
70
105
140
V
A
Average Rectified Output Current @TL = 100°C
(Note 1)
6. 0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
100
FSM
I
A
120
V
Forward Voltage
@IF = 6A
V
FM
0.70
0.80
0.85
0.92
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.1
20
IRM
mA
350
280
pF
°C/W
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
C
j
200
3.0
Rꢀ
JA
3.5
Tj, TSTG
-55 to +150
-55 to +175
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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MBRF640– MBRF6200
1 of 2
Alldatasheet
ꢀ ꢀ
Zibo Seno Electronic Engineering Co., Ltd.
MBRF640 – MBRF6200
150
120
10.0
=
40-100V
8.3ms Single
Half Since-Wave
JEDEC Method
80-200V
= 150-200V
8.0
6.0
4.0
110
90
70
50
30
20
10
40-60V
2.0
0
0
20
40
60
80
100 120 140 160 180
1
2
5
10
20
50
100
CASE TEMPERATURE, O
C
NO. OF CYCLE AT 60Hz
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
10
40
40V~45V
TJ
=100OC
1.0
10
8
6
50V~60V
4
TJ=
75OC
80V~100V
0.1
.01
2
1.0
.8
.6
150V~200V
TJ=
25OC
.4
.2
.1
.5
.6
.7
.8
.9
1.0
1.1
1.2
.001
0
20 40 60 80 100 120 140
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
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MBRF640– MBRF6200
2 of 2
Alldatasheet
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