MBRX140 [SENO]
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE;
| 型号： | MBRX140 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE 光电二极管 |
| 文件： | 总2页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
MBRX120 – MBRX1100
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
Schottky Barrier Chip
A
!
!
!
!
!
!
Ideally Suited for Automatic Assembly
B
Low Power Loss, High Efficiency
Surge Overload Rating to 2 0A Peak
For Use in Low Voltage Application
Guard Ring Die Construction
Plastic Case Material has UL Flammability
Classification Rating 94V-O
H
D
C
E
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
SOD-123
Dim
A
Min
3.65
2.55
1.40
1.25
0.68
0.25
0.18
0.05
Max
3.90
2.85
1.70
1.35
0.78
0.55
0.13
0.15
Mechanical Data
J
!
!
Case: SOD-123, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
B
C
D
E
!
!
!
!
G
H
J
Weight: 0.01 grams (approx.)
Lead Free: For RoHS / Lead Free Version
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
MBRX MBRX MBRX MBRX MBRX MBRX MBRX
Unit
Characteristic
Symbol
120
130
140
150
160
180
1100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
20
30
40
50
60
80
100
V
V
R
RMS Reverse Voltage
VR(RMS)
IO
14
21
28
35
42
56
70
V
A
Average Rectified Output Current @TL = 75°C
1.0
20
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
A
Forward Voltage
@IF = 0.5A
VFM
IRM
0.55
0.70
0.85
V
Peak Reverse Current
@TA = 25°C
0.5
20
mA
At Rated DC Blocking Voltage @TA = 100°C
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance
JL
Rꢀ
28
88
°C/W
RꢀJA
Cj
pF
°C
°C
30
Operating Temperature Range
Storage Temperature Range
Tj
-55 to +125
-55 to +150
TSTG
Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area.
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MBRX120 – MBRX1100
1 of 2
Alldatasheet
Zibo Seno Electronic Engineering Co., Ltd.
MBRX120 – MBRX1100
10
80 - 100
1.0
50 - 60
20 - 40
1.0
0.1
Tj - 25ºC
IF Pulse Width = 300 µs
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
TL, LEAD TEMPERATURE (ºC)
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
Fig. 1 Forward Current Derating Curve
1000
50
40
Tj = 25°C
f = 1 MHz
Single Half-Sine-Wave
(JEDEC Method)
Tj = 100°C
30
20
100
10
0
10
0.1
1
10
100
1
10
NUMBER OF CYCLES AT 60 Hz
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
10
Tj = 100ºC
1.0
Tj = 75ºC
0.1
0.01
Tj = 25ºC
0.001
60
100 120
0
80
140
40
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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MBRX120 – MBRX1100
2 of 2
Alldatasheet
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