MURB1050CT [SENO]

10.0A GLASS PASSIVATED SUPER FAST RECTIFIER;
MURB1050CT
型号: MURB1050CT
厂家: Zibo Seno Electronic Engineering Co.,Ltd    Zibo Seno Electronic Engineering Co.,Ltd
描述:

10.0A GLASS PASSIVATED SUPER FAST RECTIFIER

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Zibo Seno Electronic Engineering Co., Ltd.  
MURB1010CT-MURB1060CT  
10.0A GLASS PASSIVATED SUPER FAST RECTIFIER  
Features  
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Glass Passivated Die Construction  
Super-Fast Switching  
TO-263 (D2PAK)  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Mechanical Data  
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Case: TO-263(D2PAK), Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
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Polarity: See Diagram  
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Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MURB  
MURB  
MURB  
MURB  
MURB  
MURB  
UNIT  
Characterisic  
SYMBOL  
1010CT 1020CT 1030CT 1040CT 1050CT 1060CT  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified  
Current TC=100oC  
10.0  
90  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum Instantaneous Forward Voltage  
@ 5.0 A  
VF  
IR  
1.0  
1.3  
1.7  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
10.0  
250  
nS  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
CJ  
35  
pF  
oCW  
130  
170  
R JC  
3.5  
Operating Junction and Storage  
Temperature Range  
oC  
-55 to +150  
TJ, TSTG  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
MURB1010CT-MURB1060CT  
www.senocn.com  
1 of 2  
Alldatasheet  
Zibo Seno Electronic Engineering Co., Ltd.  
MURB1010CT-MURB1060CT  
10  
8
100  
1010 -1020  
1030 - 1040  
10  
6
1060  
4
1.0  
0.1  
2
0
Pulse width = 300µs  
2% duty cycle  
0
50  
100  
150  
0.2  
0.6  
1.0  
1.4  
TC, CASE TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
180  
150  
120  
90  
400  
8.3 ms single half-sine-wave  
JEDEC method  
1010 - 1020  
100  
-
1030 1060  
60  
30  
0
10  
0.1  
1.0  
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Max Non-Repetitive Surge Current  
Fig. 4 Typical Junction Capacitance  
www.senocn.com  
MURB1010CT-MURB1060CT  
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Alldatasheet  

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