PR5001G [SENO]

5.0A GLASS PASSIVATED FAST RECOVERY DIODE;


型号：	PR5001G
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	5.0A GLASS PASSIVATED FAST RECOVERY DIODE 快速恢复二极管
文件：	总2页 (文件大小：137K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

PR5001G – PR5007G

5.0A GLASS PASSIVATED FAST RECOVERY DIODE

Features

Glass Passivated Die Construction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: DO - 201AD, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 2.1 grams (approx.)

Mounting Position: Any

DOO--220011AADD

Minn

Diimm

Max

—

254..45

78..2500

9..50

1..30

5..60

1..1200

Marking: Type Number

Lead Free: For RoHS / Lead Free Version

55..000

AAllll DDiimmeennssiioonnss iinn mmmm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbol

PR5001G PR5002G PR5003G PR5004G PR5005G PR5006G PR5007G Unit

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

RWM

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

5.0

Average Rectified Output Current

(Note 1)

@T_A= 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

300

Forward Voltage

@I_F= 5.0A

V^FM

I^RM

1.28

Peak Reverse Current

@T_A= 25°C

2.0

200

µA

At Rated DC Blocking Voltage @T_A= 100°C

Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Operating Temperature Range

t^rr

C^j

150

250

450

°C

100

T^j

-55 to +150

Storage Temperature Range

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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PR5001G – PR5007G

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Zibo Seno Electronic Engineering Co., Ltd.

PR5001G – PR5007G

ꢀ ꢀ

350

8.3ms Single Half Sine-Wave

JEDEC Method

300

250

200

150

100

100 125 150 175

NUMBER OF CYCLES AT 60Hz

100

T_A, AMBIENT TEMPERATURE (°C)

Fig. 1, Typical Forward Current Derating Curve

Fig. 2 Max Non-Repetitive Peak Surge Current

1000

100

T_J= 25°C

Pulse Width = 300µs

1% Duty Cycle

T_j= 25°C

0.1

f = 1.0MHz

1.0

0.6 0.8

1.0

1.2

1.4 1.6

1.8

2.0

1.0

100

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 3, Typical Instantaneous Forward Characteristics

V_R, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

t_rr

+0.5A

50Ω NI (Non-inductive)

10Ω NI

Device

Under

Test

(-)

(+)

(-)

Pulse

Generator

(Note 2)

50V DC

Approx

-0.25A

1.0Ω

(+)

Oscilloscope

(Note 1)

Notes:

-1.0A

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

Set time base for 5/10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

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PR5001G – PR5007G

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