PR6001G [SENO]
6.0A GLASS PASSIVATED FAST RECOVERY DIODE;
| 型号： | PR6001G |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 6.0A GLASS PASSIVATED FAST RECOVERY DIODE 快速恢复二极管 |
| 文件： | 总2页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
PR6001G – PR6007G
6.0A GLASS PASSIVATED FAST RECOVERY DIODE
Features
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!
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Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
!
!
Case: R-6, Molded Plastic
D
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 2.1 grams (approx.)
Mounting Position: Any
R-6/P-600
Min
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Dim
A
Max
25.4
—
B
8.60
9.10
1.30
9.10
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
C
1.10
D
8.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
PR6001G PR6002G PR6003G PR6004G PR6005G PR6006G PR6007G Unit
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
V
R
RMS Reverse Voltage
VR(RMS)
IO
280
6.0
V
A
Average Rectified Output Current
(Note 1)
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
300
A
Forward Voltage
@IF = 6.0A
VFM
IRM
1.28
V
Peak Reverse Current
@TA = 25°C
2.0
200
µA
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
trr
Cj
150
250
450
nS
pF
°C
°C
100
Tj
-55 to +150
-55 to +150
Storage Temperature Range
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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PR6001G – PR6007G
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Zibo Seno Electronic Engineering Co., Ltd.
PR6001G – PR6007G
ꢀ ꢀ
8
6
4
350
8.3ms Single Half Sine-Wave
JEDEC Method
300
250
200
150
2
0
100
0
0
25
50
75
100 125 150 175
1
10
NUMBER OF CYCLES AT 60Hz
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Typical Forward Current Derating Curve
Fig. 2 Max Non-Repetitive Peak Surge Current
1000
1000
100
10
100
10
1
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
Tj = 25°C
0.1
f = 1.0MHz
1.0
0.6 0.8
1.0
1.2
1.4 1.6
1.8
2.0
1.0
10
100
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 3, Typical Instantaneous Forward Characteristics
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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PR6001G – PR6007G
2 of 2
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