RBV-407 [SENO]
4.0A GLASS PASSIVATED BRIDGE RECTIFIER;
| 型号： | RBV-407 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 4.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
RBV-401 - RBV-407
4.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1000VRMS
GBJ4
Min
Low Reverse Leakage Current
Dim
A
B
C
D
E
Max
25.20
15.30
Surge Overload Rating to 100A Peak
Ideal for Printed Circuit Board Applications
24.80
14.70
P
N
A
K
Plastic Material - UL Flammability
Classification 94V-0
4.00 Nominal
H
17.20
0.90
7.30
17.80
1.10
7.70
·
Lead Free Finish/RoHS Complian
C
B
D
L
G
H
J
_
3.10 Æ 3.40 Æ
Mechanical Data
M
3.30
1.50
9.30
2.50
3.40
4.40
0.60
3.70
1.90
9.70
2.90
3.80
4.80
0.80
J
·
·
Case: Molded Plastic
E
K
L
R
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
M
N
P
·
·
·
·
·
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Approx. Weight: 4.6 grams
G
R
All Dimensions in mm
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV-
401
RBV-
402
RBV-
403
RBV- RBV-
RBV-
406
RBV-
407
Characteristic
Symbol
Unit
404
405
600
420
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
100
70
200
140
400
800
560
1000
700
V
VR(RMS)
RMS Reverse Voltage
35
280
4.0
V
A
Average Rectified Output Current
@ TC = 115°C
IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
100
1.0
A
Forward Voltage per element
@ IF = 2.0A
VFM
IRM
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@ TC = 125°C
2.0
500
µA
Cj
Typical Junction Capacitance per Element (Note 1)
Typical Thermal Resistance (Note 2)
40
5.5
pF
°C/W
°C
RqJC
Tj, TSTG
Operating and Storage Temperature Range
-55 to +150
Notes:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
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RBV-401 - RBV-407
1 of 2
Zibo Seno Electronic Engineering Co., Ltd.
RBV-401 - RBV-407
6
10
5
4
TJ = 150°C
Al. Substrate PC Board
TJ = 25°C
1.0
3
2
1
0.1
Resistive or
Inductive load
Pulse width = 300µs
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
180
160
1000
f = 1MHz
Tj = 25°C
Single half-sine-wave
(JEDEC method)
Tj = 150°C
120
80
100
40
0
10
1
100
10
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
1000
TJ = 150°C
TJ = 125°C
TJ = 100°C
100
10
1.0
0.1
TJ = 25°C
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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RBV-401 - RBV-407
2 of 2
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