SB10T150L [SENO]
10A SURFACE MOUNT SCHOTTKY BARRIER DIODE;
| 型号： | SB10T150L |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 10A SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
SB10T80L-SB10T200L
10A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
!
!
Schottky Barrier Chip
Bypass Diodes for Solar Panels
High Junction Temperture
High Thermal Reliability
Patented Super Barrier Rectifier Technology
High Foward Surge Capability
Ultra Low Power Loss, High Efficiency
Excellent High Temperature Stability
!
!
!
!
!
Top View
Bottom View
LEFT PIN
BOTTOMSIDE
HEAT SINK
RIGHT PIN
Mechanical Data
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
!
!
Case:TO-277B Molded Plastic "Green" Molding Compound
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
!
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS/Lead Free Version
!
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SB
SB
SB
SB
SB
Parameter
Symbol
Unit
V
10T80L
10T150L
10T200L
10T100L
10T120L
VRRM
VRWM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC blocking voltage
80
56
100
120
150
200
140
VDC
VR(RMS)
IO
84
105
70
RMS Rectified Voltage
V
A
Average Rectified Output Current
(Note1)
10
Non-Repetitive Peak Forward Surge8.3ms
IFSM
150
Single Half Sine-Wave Superimposed on rated
load(JEDEC Method)
(Note2)
A
I2 t Rating for Fusing (t < 8.3ms)
I
2 t
2s
A
93.4
Forward Voltage Drop
Typ
Typ
Typ
Typ
Max.
Max.
Max.
Max.
-
@IF=1A
@IF=5A
@IF=10A
℃
℃
℃
TA =25
TA =25
-
-
-
-
-
0.40
0.50
0.47
0.52
0.61
0.71
0.66
V
VFM
0.55
0.71 0.76
0.90
0.56 0.62 0.64 0.67 0.77 0.85 0.79 0.88
T =25
A
Peak Reverse Curent
TA=25 ℃
0.3
15
IR
mA
At Rated DC Blocking Voltage
TA =100 ℃
RθJA
80
15
Typical Thermal Resistance
Junctionto Ambient
℃ /W
℃
RθJL
TJ
Operating junction temperature range
storage temperature range
-55 to +150
-55 to +150
TSTG
℃
Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.
m.
2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4m
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SB10T80L-SB10T200L
Zibo Seno Electronic Engineering Co., Ltd.
SB10T80L-SB10T200L
FIG.2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.1 - FORWARD CURRENT DERATING CURVE
10.0
10
8.0
6.0
4.0
2.0
1
0.1
0.01
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
60 Hz Resistive or
Inductive load
0
0
50
100
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
LEAD TEMPERATURE, oC
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.3 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
10
TJ=100oC
1
0.1
50
TJ=25oC
25
0.01
0
0
20
40
60
80
100
1
10
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
NUMBER OF CYCLES AT 60Hz
R
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
100
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
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SB10T80L-SB10T200L
Zibo Seno Electronic Engineering Co., Ltd.
SB10T80L-SB10T200L
Ordering Information
Part Number
Case
Packaging
TO-277B
SB10T**L
5000/Tape & Reel
Outline Dimensions
A
E
D
TO-277B
F
B
Dim
A
B
C
D
E
Min
1.05
0.33
0.80
1.70
3.90
Max
1.15
0.43
0.99
1.88
4.05
K
J
G
I
F
3.054 Typ
6.40
1.84 Typ
5.30
6.60
G
H
I
M
L
5.45
3.549 Typ
J
K
L
M
0.75
0.50
1.10
0.95
0.65
1.41
H
C
C
B
All Dimensions in mm
Suggested Pad Layout
a
Dimensions Value (in mm)
a
b
c
d
e
3.360
4.860
1.390
1.400
1.840
0.852
b
h
c
h
d
e
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SB10T80L-SB10T200L
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