SDURF10H20 [SENO]
10.0A GLASS PASSIVATED SUPERFAST RECTIFIER;
| 型号： | SDURF10H20 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 10.0A GLASS PASSIVATED SUPERFAST RECTIFIER |
| 文件： | 总2页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
SDURF10H10 – SDURF10H60
10.0A GLASS PASSIVATED SUPERFAST RECTIFIER
Features
ITO-220AC
!
!
!
!
!
!
Glass Passivated Die Construction
Super-Fast Switching
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
B
ITO-220AC
Min
C
Dim
Max
15.50
10.50
2.90
A
B
C
D
E
F
G
H
I
14.50
9.50
2.55
3.30
13.00
0.30
3.00 Ø
6.30
4.20
2.50
0.45
2.50
4.88
G
A
E
PIN1
3
4.30
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
14.00
0.90
D
Mechanical Data
3.80 Ø
7.30
F
!
!
Case: ITO-220AC, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
4.80
P
J
2.90
K
L
P
0.70
I
3.10
!
!
!
5.28
L
H
All Dimensions in mm
!
Lead Free: For RoHS / Lead Free Version
PIN 1 +
PIN 3 -
+
Case
J
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SDURF SDURF SDURF SDURF SDURF SDURF
10H10 10H20 10H30 10H40 10H50 10H60
Characteristic
Symbol
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
100
70
200
140
300
210
400
280
500
350
600
420
V
V
R
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
@TC = 100°C
10.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
90
A
Forward Voltage
@IF= 10.0A
VFM
IRM
V
1.0
1.3
1.7
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
400
µA
35
Reverse Recovery Time (Note 1)
trr
Cj
nS
pF
°C
Typical Junction Capacitance (Note 2)
200
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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SDURF10H10 – SDURF10H60
1 of 2
Zibo Seno Electronic Engineering Co., Ltd.
ꢀ
SDURF10H10 – SDURF10H60
10
8
100
10H10-10H20
10H30-10H40
10
6
10H50-10H60
4
1.0
0.1
2
0
Pulse width = 300µs
2% duty cycle
0
50
100
150
0.2
0.6
1.0
1.4
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
180
150
120
90
400
8.3 ms single half-sine-wave
JEDEC method
1010-1020
100
1030-1060
60
30
0
10
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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SDURF10H10 – SDURF10H60
2 of 2
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