SL15T100L [SENO]

15.0 A SUPER BARRIER RECTIFIER;


型号：	SL15T100L
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	15.0 A SUPER BARRIER RECTIFIER
文件：	总2页 (文件大小：190K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

SL15T80L - SL15T200L

15.0 A SUPER BARRIER RECTIFIER

Features

Schottky Barrier Chip

Bypass Diodes for Solar Panels

ꢀ

TO-277B

High Junction Temperture

High Thermal Reliability

Patented Super Barrier Rectifier Technology

High Foward Surge Capability

Ultra Low Power Loss, High Efficiency

Excellent High Temperature Stability

1.90

1.70

1.95

1.65

4.20

3.80

5.50

5.30

3.85

3.25

0.65

0.45

Mechanical Data

3.20

2.90

Case:TO-277B Molded Plastic "Green" Molding Compound

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

1.00

0.80

1.20

1.00

Polarity: Cathode Band

Weight: 0.093 grams (approx.)

Mounting Position: Any

0.45

0.20

1.20

1.00

6.60

6.40

Marking: Type Number

Lead Free: For RoHS/Lead Free Version

Dimensions in millimeters

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SL15T80L

SL15T100L

100

SL15T120L

120

SL15T150L

150

SL15T200L

200

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

105

140

Average Rectified Output Current

(Note 1)

@T_L= 100°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

I²t

250

I²t Rating for Fusing (t<8.3ms)

A²s

259.4

Typ. Max. Typ. Max.

Typ. Max.

Forward Voltage Drop

0.38

0.47

0.38

0.47

0.48

0.68

0.74

= 25°C

_F= 1.0A

_F= 5.0A

_F= 10A

_F= 15A

T_A

V^FM

0.55 0.63

0.63 0.66

0.55 0.63

0.63 0.66

0.70

0.80 0.85

0.92

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.3

I^RM

R^ꢀ

110

°C/W

°C

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

T^j, T^STG

-55 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. FR-4 PCB, 2oz. Copper, minimum recommended pad layout .

3. Polymide PCB, 2oz. Copper. Cathode pad dimensions 18.8mm x 14.4mm. Anode pad dimensions 5.6mm x 14.4mm.

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SL15T80L - SL15T200L

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Zibo Seno Electronic Engineering Co., Ltd.

SL15T80L - SL15T200L

FIG.2 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG.1 - FORWARD CURRENT DERATING CURVE

25.0

20.0

15.0

10.0

5.0

SL10T100

0.1

0.01

TJ=25^oC

PULSE WIDTH=300uS

1% DUTY CYCLE

60 Hz Resistive or

Inductive load

100

150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

LEAD TEMPERATURE, ^oC

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG.3 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

100

Pulse Width 8.3ms

Single Half-Sire-Wave

(JEDEC Method)

300

250

200

150

100

TJ=100^oC

0.1

TJ=25^oC

0.01

100

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

NUMBER OF CYCLES AT 60Hz

FIG.5 - TYPICAL JUNCTION CAPACITANCE

10000

1000

100

TJ = 25^oC

f = 1.0 MHZ

Vsig = 50mVp-p

0.1

1.0

4.0 10

100

REVERSE VOLTAGE, VOLTS

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2 of 2

SL15T80L - SL15T200L

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