SMBYT03-400 [SENO]

3.0A SURFACE MOUNT ULTRAFAST DIODE;


型号：	SMBYT03-400
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	3.0A SURFACE MOUNT ULTRAFAST DIODE 快速恢复二极管光电二极管
文件：	总2页 (文件大小：158K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

SMBYT03-50 – SMBYT03-1000

3.0A SURFACE MOUNT ULTRAFAST DIODE

Features

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 100A Peak

Low Power Loss

Ultra-Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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SMC/DO-214AB

Mechanical Data

Dim

Min

5.59

6.60

2.75

0.152

7.75

2.00

0.051

0.76

Max

6.22

7.11

Case: SMC/DO-214AB, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

3.25

0.305

8.13

2.62

0.203

1.27

Weight: 0.20 grams (approx.)

Lead Free: For RoHS / Lead Free Version

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

SMBYT03 SMBYT03 SMBYT03 SMBYT03 SMBYT03 SMBYT03 SMBYT03

Characteristic

Symbol

Unit

-50

-100

-200

-400

-600

-800

-1000

Marking Code

C10

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

100

200

140

400

600

420

800

560

1000

800

RWM

RMS Reverse Voltage

V^R(RMS)

I^O

280

3.0

Average Rectified Output Current

@T_L= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

100

1.3

Forward Voltage

@I_F= 3.0A

V^FM

I^RM

1.0

1.7

Peak Reverse Current

@T_A= 25°C

2.0

500

µA

At Rated DC Blocking Voltage

@T_A= 100°C

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

t^rr

C^j

R^ꢀ^JL

T^j,T^STG

°C/W

°C

Operating and Storage Temperature Range

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

www.senocn.com

SMBYT03-50 – SMBYT03-1000

1 of 2

Zibo Seno Electronic Engineering Co., Ltd.

SMBYT03-50 – SMBYT03-1000

50-300

Single phase half wave

Resistive or Inductive load

400

600-1000

1.0

0.1

T_j= 25°C

Pulse width = 300µs

2% duty cycle

0.01

0.6

1.0

1.4

1.8

100 125

150 175

T_A, AMBIENT TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

1000

200

100

8.3ms single half

sine wave

100

T_j= 100°C

1.0

T_j= 25°C

0.1

0.01

100 120 140

100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 4 Typical Reverse Characteristics

NUMBER OF CYCLES AT 60Hz

Fig. 3 Peak Forward Surge Current

t_rr

+0.5A

50Ω NI (Non inductive)

10Ω NI

Device

Under

Test

( )

(+)

Pulse

Generator

(Note 2)

50V DC

Approx

0.25A

( )

1.0Ω

(+)

Oscilloscope

(Note 1)

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

1.0A

Set time base for 5/10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

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SMBYT03-50 – SMBYT03-1000

2 of 2

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