SMBYW02-600 [SENO]

2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE;


型号：	SMBYW02-600
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
文件：	总2页 (文件大小：110K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

SMBYW02-50 – SMBYW02-600

2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 50A Peak

Low Power Loss

Super-Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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SMB/DO-214AA

Mechanical Data

Dim

Min

3.30

4.06

1.96

0.15

5.00

2.00

0.10

0.76

Max

3.94

4.57

2.21

0.31

5.59

2.62

0.20

1.52

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

Lead Free: For RoHS / Lead Free Version

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

SMBYW02 SMBYW02 SMBYW02 SMBYW02 SMBYW02 SMBYW02 SMBYW02

Symbol

Unit

Characteristic

-50

-100

-150

-200

-300

-400

-600

Marking Code

A20

A40

A60

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RW^M

V^R

100

150

105

200

300

210

400

280

600

420

RMS Reverse Voltage

V^R(RMS)

I^O

140

2.0

Average Rectified Output Current

@T_L= 120°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 2.0A

V^FM

I^RM

0.95

1.30

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

2.0

500

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

t^rr

C^j

R^ꢀ^JL

T^j,T^STG

°C/W

°C

Operating and Storage Temperature Range

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

www.senocn.com

SMBYW02-50 – SMBYW02-600

1 of 2

Zibo Seno Electronic Engineering Co., Ltd.

SMBYW02-50 – SMBYW02-600

2.0

1.0

T_j= 25°C

Pulse width = 300µs

Single phase half wave

Resistive or Inductive load

300-400

50-200

1.0

600

0.1

0.01

100 125

150 175

( ° C)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

T_L, LEAD TEMPERATURE

Fig. 1 Forward Current Derating Curve

1000

Single Half-Sine-Wave

(JEDEC Method)

T_j= 125°C

100

T_j= 25°C

1.0

0.1

120

100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 4 Typical Reverse Characteristics

NUMBER OF CYCLES AT 60Hz

Fig. 3 Surge Current Derating Curve

t_rr

+0.5A

50Ω NI (Non inductive)

10Ω NI

Device

Under

Test

( )

(+)

Pulse

Generator

(Note 2)

50V DC

Approx

0.25A

( )

1.0Ω

(+)

Oscilloscope

(Note 1)

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

1.0A

Set time base for 5/10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

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SMBYW02-50 – SMBYW02-600

2 of 2

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