SMBYW04-150 [SENO]
4.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE;
| 型号： | SMBYW04-150 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 4.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE 功效 光电二极管 |
| 文件： | 总2页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
SMBYW04-50 – SMBYW04-600
4.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
Features
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Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 100A Peak
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
D
J
A
C
G
H
E
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
SMC/DO-214AB
Mechanical Data
Dim
A
Min
5.59
6.60
2.75
0.152
7.75
2.00
0.051
0.76
Max
6.22
7.11
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Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
B
C
3.25
0.305
8.13
2.62
0.203
1.27
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D
E
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Weight: 0.20 grams (approx.)
F
G
H
Lead Free: For RoHS / Lead Free Version
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
SMBYW04 SMBYW04 SMBYW04 SMBYW04 SMBYW04 SMBYW04 SMBYW04
Symbol
Unit
Characteristic
-50
-100
-150
-200
-300
-400
-600
Marking Code
D20
D20
D20
D20
D40
D40
D60
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
150
105
200
300
210
400
280
600
420
V
RMS Reverse Voltage
VR(RMS)
IO
140
4.0
V
A
Average Rectified Output Current
@TL = 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
100
A
Forward Voltage
@IF = 4.0A
VFM
IRM
0.95
1.30
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
2.0
500
µA
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
trr
Cj
35
nS
pF
60
40
RꢀJL
Tj, TSTG
35
°C/W
°C
Operating and Storage Temperature Range
-55 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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SMBYW04-50 – SMBYW04-600
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Zibo Seno Electronic Engineering Co., Ltd.
SMBYW04-50 – SMBYW04-600
4.0
3.0
2.0
1.0
Tj = 25°C
Pulse width = 300µs
10
1.0
300-400
50-200
0.1
600
0.01
100
25
50
75
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TT, TERMINAL TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fi . 1 Forward Current Deratin Curve
100
120
100
80
Tj = 25°C
f = 1.0MHz
Single Half-Sine-Wave
(JEDEC Method)
10
60
40
20
0
1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Surge Current Derating Curve
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non inductive)
10Ω NI
Device
Under
Test
( )
0A
(+)
( )
Pulse
Generator
(Note 2)
50V DC
Approx
0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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SMBYW04-50 – SMBYW04-600
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