SR10200L [SENO]
10.0A LOW VF SCHOTTKY BARRIER DIODE;
| 型号： | SR10200L |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 10.0A LOW VF SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
SR1020L – SR10200L
10.0A LOW VF SCHOTTKY BARRIER DIODE
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
!
!
!
High Current Capability
A
B
A
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
C
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Mechanical Data
O-201AD
im
n
4.5
7.20
.1
5.00
!
!
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
9.
1.30
.
!
!
!
!
!
AllDimensionsinmm
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SR
SR
SR
1040L
SR
1050L
SR
1060L
SR
SR
SR
SR
Characteristic
Symbol
Unit
V
1020L 1030L
1080L 10100L 10150L 10200L
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
14
30
21
40
28
50
35
60
42
80
56
100
70
150
105
200
140
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
(Note 1)
@TL = 95°C
10.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
FSM
150
A
I
Forward Voltage
@IF = 10.0A
VFM
IRM
0.45
0.55
0.80
0.85
0.90
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.2
20
0.2
10
mA
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Cj
Rꢀ
250
pF
°C/W
°C
JA
2.5
Tj, TSTG
-65 to +150
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
www.senocn.com
SR1020L – SR10200L
1 of 2
Alldatasheet
Zibo Seno Electronic Engineering Co., Ltd.
ꢀ
SR1020L – SR10200L
ꢀ
10
8
1 0 0
20 –40
10
50 – 60
6
80 – 200
1.0
4
0.1
2
0
Resistive or
Inductive Load
0.01
3000
1000
0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TL, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
Single Half-Sine-Wave
(JEDEC Method)
Tj = 25°C
120
90
20 - 40
50 - 100
60
30
0
100
100
1.0
10
0.1
1
10
NUMBER OF CYCLES AT 60Hz
100
VR, REVERSE VOLTAGE (V)
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
Fig. 4 Typical Junction Capacitance
Tj = 125°C
10
1.0
Tj = 75°C
0.1
Tj = 25°C
0.01
0.001
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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SR1020L – SR10200L
2 of 2
Alldatasheet
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