SR15150L [SENO]
15A SURFACE MOUNT SCHOTTKY BARRIER DIODE;
| 型号： | SR15150L |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 15A SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
SR1545L-SR15200L
15A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
!
!
Schottky Barrier Chip
Bypass Diodes for Solar Panels
High Junction Temperture
High Thermal Reliability
Patented Super Barrier Rectifier Technology
High Foward Surge Capability
Ultra Low Power Loss, High Efficiency
Excellent High Temperature Stability
!
!
!
!
!
Top View
Bottom View
LEFT PIN
BOTTOMSIDE
HEAT SINK
RIGHT PIN
Mechanical Data
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
!
!
Case:TO-277B Molded Plastic "Green" Molding Compound
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
!
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS/Lead Free Version
!
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SR
SR
SR
SR
SR
SR
SR
Parameter
Peak Repetitive Reverse Voltage
Symbol
Unit
V
15100L
1560L
1580L
15150L
15200L
1545L
1550L
VRRM
VRWM
VDC
Working Peak Reverse Voltage
DC blocking voltage
45
32
50
35
60
42
80
56
100
70
150
105
200
140
VR(RMS)
RMS Rectified Voltage
V
A
Average Rectified Output Current
(Note1)
15
IO
Non-Repetitive Peak Forward Surge8.3ms
Single Half Sine-Wave Superimposed on rated
load(JEDEC Method)
(Note2)
A
275
IFSM
I2 t Rating for Fusing (t < 8.3ms)
2s
A
313.8
I
2 t
VFM
℃
Forward Voltage Drop TA =25
V
0.75
0.3
0.45
0.48
0.55
0.82
@IF=15A
Peak Reverse Curent
TA=25 ℃
IR
mA
15
At Rated DC Blocking Voltage
Typical Thermal Resistance
Junctionto Ambient
TA =100 ℃
RθJA
RθJL
100
15
℃ /W
TJ
Operating junction temperature range
storage temperature range
-55 to +150
-55 to +150
℃
℃
TSTG
Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.
2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4m
m.
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SR1545L-SR15200L
Alldatasheet
Zibo Seno Electronic Engineering Co., Ltd.
SR1545L-SR15200L
FIG.2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.1 - FORWARD CURRENT DERATING CURVE
25.0
10
SR1545L-SR1550L
SR1560L
20.0
15.0
10.0
5.0
1
SR1580L
SR15100L
0.1
0.01
SR15150L SR15200L
TJ=25oC
60 Hz Resistive or
Inductive load
PULSE WIDTH=300uS
1% DUTY CYCLE
0
0
50
100
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
LEAD TEMPERATURE, oC
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.3 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
275
250
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
10
TJ=100oC
225
200
175
150
125
100
75
1
0.1
TJ=25oC
0.01
0
20
40
60
80
100
1
10
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
NUMBER OF CYCLES AT 60Hz
R
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
100
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
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SR1545L-SR15200L
Alldatasheet
Zibo Seno Electronic Engineering Co., Ltd.
SR1545L-SR15200L
Ordering Information
Part Number
Case
Packaging
TO-277B
SR15**L
5000/Tape & Reel
Outline Dimensions
A
E
D
TO-277B
F
B
Dim
A
B
C
D
E
Min
1.05
0.33
0.80
1.70
3.90
Max
1.15
0.43
0.99
1.88
4.05
K
J
G
I
F
3.054 Typ
6.40
1.84 Typ
5.30
6.60
G
H
I
M
L
5.45
3.549 Typ
J
K
L
M
0.75
0.50
1.10
0.95
0.65
1.41
H
C
C
B
All Dimensions in mm
Suggested Pad Layout
a
Dimensions Value (in mm)
a
b
c
d
e
3.360
4.860
1.390
1.400
1.840
0.852
b
h
c
h
d
e
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SR1545L-SR15200L
Alldatasheet
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