STPS05200Z [SENO]

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE;


型号：	STPS05200Z
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
文件：	总2页 (文件大小：148K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

STPS0520Z – STPS05200Z

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

Surge Overload Rating to 20A Peak

For Use in Low Voltage Application

Guard Ring Die Construction

SOD - 123FL

Cathode Band

Top View

Plastic Case Material has UL Flammability

Classification Rating 94V-O

2.6±0.2

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Mechanical Data

Case: SOD-123FL, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

0.7±0.3

Weight: 0.01 grams (approx.)

Lead Free: For RoHS / Lead Free Version

3.6±0.2

Dimensions in millimeters

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

STPS STPS STPS

0550Z 0560Z 0580Z

STPS

STPS STPS

0520Z 0530Z 0540Z

STPS STPS STPS

05100Z 05150Z 05200Z

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

RWM

100

150

105

200

140

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 75°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FS

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

0.55

0.70

0.85

0.95

110

Peak Reverse Current

@T_A= 25°C

0.1

At Rated DC Blocking Voltage @T_A= 100°C

Typical Thermal Resistance (Note 1)

Typical Junction Capacitance

R^ꢀ

°C/W

R^ꢀ^JA

C_j

°C

110

Operating Temperature Range

Storage Temperature Range

T^j

-55 to +150

T^STG

Note: 1. Mounted on P.C. Board with 5.0mm²copper pad area.

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STPS0520Z - STPS05200Z

1 of 2

Zibo Seno Electronic Engineering Co., Ltd.

STPS0520Z – STPS05200Z

0580 - 05100

1.0

0550 - 0560

0520 - 0540

05150 - 05200

1.0

0.1

T_j- 25ºC

I_FPulse Width = 300 µs

0.01

100

125

150

0.4

0.8

1.2

T_L, LEAD TEMPERATURE (ºC)

V_F, INSTANTANEOUS FWD VOLTAGE (V)

Fig. 2 Typ. Forward Characteristics

Fig. 1 Forward Current Derating Curve

1000

T_j= 25°C

f = 1 MHz

Single Half-Sine-Wave

(JEDEC Method)

T_j= 100°C

100

0.1

100

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

100

V_R, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

100

T_j= 100ºC

1.0

T_j= 75ºC

0.1

0.01

T_j= 25ºC

0.001

100 120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

STPS0520Z - STPS05200Z

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2 of 2

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