STPS0550Z [SENO]
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE;
| 型号： | STPS0550Z |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
STPS0520Z – STPS05200Z
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
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Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 20A Peak
For Use in Low Voltage Application
Guard Ring Die Construction
SOD - 123FL
Cathode Band
Top View
Plastic Case Material has UL Flammability
Classification Rating 94V-O
2.6±0.2
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Mechanical Data
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Case: SOD-123FL, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
0.7±0.3
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Weight: 0.01 grams (approx.)
Lead Free: For RoHS / Lead Free Version
3.6±0.2
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
STPS STPS STPS
0550Z 0560Z 0580Z
STPS
STPS STPS
0520Z 0530Z 0540Z
STPS STPS STPS
05100Z 05150Z 05200Z
Characteristic
Symbol
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
20
14
30
21
40
28
50
35
60
42
80
56
100
70
150
105
200
140
V
V
R
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current @TL = 75°C
1.0
20
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
M
IFS
A
Forward Voltage
@IF = 1.0A
VFM
IRM
0.55
0.70
0.85
0.95
110
V
Peak Reverse Current
@TA = 25°C
0.1
20
mA
At Rated DC Blocking Voltage @TA = 100°C
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance
JL
Rꢀ
28
88
°C/W
RꢀJA
Cj
pF
°C
°C
110
30
Operating Temperature Range
Storage Temperature Range
Tj
-55 to +150
-55 to +150
TSTG
Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area.
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STPS0520Z - STPS05200Z
1 of 2
Zibo Seno Electronic Engineering Co., Ltd.
STPS0520Z – STPS05200Z
10
0580 - 05100
1.0
0550 - 0560
0520 - 0540
05150 - 05200
1.0
0.1
Tj - 25ºC
IF Pulse Width = 300 µs
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
TL, LEAD TEMPERATURE (ºC)
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
Fig. 1 Forward Current Derating Curve
1000
50
Tj = 25°C
f = 1 MHz
Single Half-Sine-Wave
(JEDEC Method)
Tj = 100°C
40
30
20
100
10
10
0
0.1
1
10
100
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
10
Tj = 100ºC
1.0
Tj = 75ºC
0.1
0.01
Tj = 25ºC
0.001
60
100 120
0
80
140
40
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
STPS0520Z - STPS05200Z
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2 of 2
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