STTH802D [SENO]

8.0A GLASS PASSIVATED ULTRAFAST DIODE;


型号：	STTH802D
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	8.0A GLASS PASSIVATED ULTRAFAST DIODE 超快恢复二极管快速恢复二极管局域网
文件：	总2页 (文件大小：100K)
中文：	中文翻译
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Zibo Seno Electronic Engineering Co., Ltd.

STTH8005D – STTH810D

8.0A GLASS PASSIVATED ULTRAFAST DIODE

Features

Glass Passivated Die Construction

Ultra-Fast Switching

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

TO-220AC

Min

Dim

Max

15.90

10.70

3.43

13.90

9.80

2.54

PIN1

3.56

4.56

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

12.70

0.51

14.73

1.14

3.55 Ø

5.75

4.09 Ø

6.85

Mechanical Data

Case: TO-220AC, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 1.81 grams (approx.)

Mounting Position: Any

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

Lead Free: For RoHS / Lead Free Version

3.56

4.83

2.03

2.92

0.30

0.64

1.10

1.40

4.80

5.35

All Dimensions in mm

PIN 1 +

PIN 3 -

Case

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

STTH

8005D 801D

STTH STTH STTH STTH

STTH STTH STTH

Characteristic

Symbol

Unit

802D

803D

805D

806D

808D 810D

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

RWM

100

200

300

400

600

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

140

210

280

420

Average Rectified Output Current

@T_C= 105°C

8.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 8.0A

V^FM

I^RM

0.95

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

400

µA

Reverse Recovery Time (Note 1)

t^rr

C^j

°C

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

T^j, T^STG

-55 to +150

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

STTH8005D – STTH810D

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Zibo Seno Electronic Engineering Co., Ltd.

ꢀ ꢀ

STTH8005D – STTH810D

100

8005 -804

805

806-810

1.0

0.1

Pulse width = 300µs

2% duty cycle

100

150

0.2

0.6

1.0

1.4

T_C, CASE TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

180

150

120

400

8.3 ms single half-sine-wave

JEDEC method

8005 - 805

100

806 810

0.1

1.0

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60Hz

Fig. 3 Max Non-Repetitive Surge Current

Fig. 4 Typical Junction Capacitance

STTH8005D – STTH810D

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