UG1001 [SENO]
1.0A GLASS PASSIVATED ULTRAFAST DIODE;
| 型号： | UG1001 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 1.0A GLASS PASSIVATED ULTRAFAST DIODE 瞄准线 二极管 |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
UG1001 – UG1008
1.0A GLASS PASSIVATED ULTRAFAST DIODE
Features
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Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
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Case: Molded Plastic
D
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
DO-41
Min
Dim
A
Max
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24.5
4.06
0.60
2.00
—
5.21
0.80
3.00
B
C
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UG1001 UG1002 UG1003 UG1004 UG1005 UG1006 UG1007 UG1008
Characteristic
Symbol
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
V
50
35
100
70
200
140
300
210
400
280
600
420
800
560
1000
700
V
R
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
(Note 1)
1.0
30
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
A
I
Forward Voltage
@IF = 1.0A
VFM
IRM
1.0
1.3
1.7
V
Peak Reverse Current
@TA = 25°C
2.0
100
µA
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
trr
Cj
50
60
75
40
nS
pF
°C
°C
Tj
-55 to +150
-55 to +150
Storage Temperature Range
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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UG1001 – UG1008
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Zibo Seno Electronic Engineering Co., Ltd.
UG1001 – UG1008
ꢀ
1.00
10
Single phase half wave
Resistive or Inductive load
UG1001-UG1004
0.75
0.50
0.25
UG1005
2.0
UG1006-UG1008
1.0
Tj = 25°C
Pulse width = 300µs
0
0.01
0
25
50
75
100 125
150 175
0.6
0.8
1.0
1.2
1.4
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
30
100
Tj = 25°C
f = 1.0MHz
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
UG1001-UG1005
20
10
0
10
UG1006-UG1008
1
1
10
100
1
10
100
NUMBER OF CYCLES AT 60Hz
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
Fig. 3 Peak Forward Surge Current
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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UG1001 – UG1008
2 of 2
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