UG2004 [SENO]

2.0A GLASS PASSIVATED ULTRAFAST DIODE;


型号：	UG2004
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	2.0A GLASS PASSIVATED ULTRAFAST DIODE 功效二极管
文件：	总2页 (文件大小：89K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

UG2001 – UG2008

2.0A GLASS PASSIVATED ULTRAFAST DIODE

Features

Glass Passivated Die Construction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.40 grams (approx.)

Mounting Position: Any

DO-15

Dim

Min

24.5

5.50

0.60

2.60

Max

—

7.62

0.80

3.60

Marking: Type Number

Lead Free: For RoHS / Lead Free Version

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UG2001 UG2002 UG2003 UG2004 UG2005 UG2006 UG2007 UG2008

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

100

200

140

300

210

400

280

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

(Note 1)

2.0

@T_A= 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

Forward Voltage

@I_F= 2.0A

V^FM

I^RM

1.0

1.3

1.7

Peak Reverse Current

@T_A= 25°C

2.0

100

µA

At Rated DC Blocking Voltage @T_A= 100°C

Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Operating Temperature Range

t^rr

C^j

°C

T^j

-55 to +150

Storage Temperature Range

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

www.senocn.com

UG2001 – UG2008

1 of 2

Zibo Seno Electronic Engineering Co., Ltd.

UG2001 – UG2008

ꢀ ꢀ

2.5

2.0

1.5

1.0

0.5

UG2001-UG2004

UG2005

2.0

1.0

UG2006-UG2008

T_j= 25°C

Single phase half-wave

60 Hz resistive or inductive load

Pulse width = 300µs

0.01

100

0.6

0.8

1.0

1.2

1.4

T_A, AMBIENT TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

100

125

150 175

200

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

UG2001-UG2005

UG2006-UG2008

T = 25°C

f = 1.0MHz

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60Hz

Fig. 3 Peak Forward Surge Current

Fig. 4 Typical Junction Capacitance

t_rr

+0.5A

50Ω NI (Non-inductive)

10Ω NI

Device

Under

Test

(-)

(+)

(-)

Pulse

Generator

(Note 2)

50V DC

Approx

-0.25A

1.0Ω

(+)

Oscilloscope

(Note 1)

Notes:

-1.0A

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

Set time base for 5/10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

www.senocn.com

UG2001 – UG2008

2 of 2

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