UG5003 [SENO]
5A GLASS PASSIVATED ULTRAFAST DIODE;
| 型号： | UG5003 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 5A GLASS PASSIVATED ULTRAFAST DIODE |
| 文件： | 总2页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
UG5001 – UG5008
5A GLASS PASSIVATED ULTRAFAST DIODE
Features
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Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
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Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
D
O-201AD
Mn
im
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4.5
7.2
.
.
.10
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
5.00
AllDimensionsinmm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol UG5001 UG5002 UG5003 UG5004 UG5005 UG5006 UG5007 UG5008
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
50
35
100
70
200
140
300
210
400
280
600
420
800
560
1000
700
V
V
R
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
(Note 1)
5.0
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
150
A
Forward Voltage
@IF = 5.0A
VFM
IRM
1.0
1.3
1.7
V
Peak Reverse Current
@TA = 25°C
2.0
100
µA
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
trr
Cj
50
80
75
50
nS
pF
°C
°C
Tj
-55 to +150
-55 to +150
Storage Temperature Range
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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UG5001 – UG5008
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Zibo Seno Electronic Engineering Co., Ltd.
ꢀ ꢀ
100
8
Single phase half wave
Resistive or Inductive load
10
6
4
2
1.0
0.1
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0.01
0.6
0
1.0
1.4
1.8
0
25
50
75
100 125
150 175
°
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TA, AMBIENT TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
200
100
100
8.3ms single half
sine-wave
10
10
1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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