UG8KB10 [SENO]

8.0A BRIDGE RECTIFIER;
UG8KB10
型号: UG8KB10
厂家: Zibo Seno Electronic Engineering Co.,Ltd    Zibo Seno Electronic Engineering Co.,Ltd
描述:

8.0A BRIDGE RECTIFIER

文件: 总2页 (文件大小:118K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Zibo Seno Electronic Engineering Co., Ltd.  
UG8KB05 – UG8KB100  
8.0A BRIDGE RECTIFIER  
Features  
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Diffused Junction  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
D3K  
Mechanical Data  
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Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version  
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All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UG8K UG8K UG8K UG8K UG8K UG8K UG8K  
Characteristic  
Symbol  
Unit  
B05  
B10  
B20  
B40  
B60  
B80  
B100  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
V
RWM  
50  
100  
200  
400  
600  
800  
1000  
V
V
R
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
70  
140  
280  
8.0  
420  
560  
700  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 50°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
175  
A
Forward Voltage (per element)  
@IF = 8.0A  
VFM  
IRM  
1.05  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
500  
µA  
Typical Thermal Resistance (Note 3)  
RJA  
35  
K/W  
°C  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.  
UG6KB05 – UG8KB100  
www.senocn.com  
1 of 2  
Alldatasheet  
Zibo Seno Electronic Engineering Co., Ltd.  
UG8KB05 – UG8KB100  
8.0  
7.0  
6.0  
10  
TJ  
= 150°C  
TJ  
= 25°C  
5.0  
4.0  
3.0  
1.0  
0.1  
0
2.0  
1.0  
Pulse Width  
=
300 µs  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
75  
150  
225  
VF, INSTANTANEOUS FWD VOLTAGE (V)  
Fig. 2 Typical Fwd Characteristics  
T, TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
175  
100  
10  
1
Tj = 25°C  
f = 1MHz  
Tj = 150°c  
Single Half  
Sine Wave  
(JEDEC Method)  
150  
125  
100  
75  
50  
1
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60 Hz  
Fig. 4 Typical Junction Capacitance  
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current  
10,000  
1000  
Tj = 150°C  
Tj = 100°C  
100  
10  
Tj = 125°C  
1.0  
Tj = 25°C  
0.1  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 5 Typical Reverse Characteristics  
UG8KB05 – UG86KB100  
www.senocn.com  
2 of 2  
Alldatasheet  

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