UR8KB05_V01 [SENO]

8.0A BRIDGE RECTIFIER;


型号：	UR8KB05_V01
厂家：	Zibo Seno Electronic Engineering Co.,Ltd
描述：	8.0A BRIDGE RECTIFIER
文件：	总2页 (文件大小：104K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Zibo Seno Electronic Engineering Co., Ltd.

UR8KB05 – UR8KB100

8.0A BRIDGE RECTIFIER

Features

Diffused Junction

D3K

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

D3K

Min

Dim

Max

14.6

3.60

11.0

14.4

2.20

7.30

4.11

0.55

1.42

0.86

2.40

13.5

3.00

10.2

13.0

1.20

6.70

3.51

0.30

1.20

0.66

1.80

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version

3.40

3.00

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UR8K UR8K UR8K UR8K UR8K UR8K UR8K

Characteristic

Symbol

Unit

B05

B10

B20

B40

B60

B80

B100

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

RWM

100

200

400

600

800

1000

RMS Reverse Voltage

V^R(RMS)

I^O

140

280

8.0

420

560

700

Average Rectified Output Current

(Note 1)

@T_A= 50°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

175

1.0

Forward Voltage (per element)

@I_F= 8.0A

V^FM

I^RM

Peak Reverse Current

@T_A= 25°C

500

µA

At Rated DC Blocking Voltage

@T_A= 100°C

Typical Thermal Resistance (Note 3)

R^ꢀ^JA

K/W

°C

Operating and Storage Temperature Range

T^j,T^STG

-55 to +150

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance junction to ambient mounted on PC board with 12mm²copper pad.

UR6KB05 – UR8KB100

www.senocn.com

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Zibo Seno Electronic Engineering Co., Ltd.

UR8KB05 – UR8KB100

8.0

7.0

6.0

T_J

= 150°C

T_J

= 25°C

5.0

4.0

3.0

1.0

0.1

2.0

1.0

Pulse Width

300 µs

0.2

0.4

0.6

0.8

1.0

1.2

1.4

150

225

V_F, INSTANTANEOUS FWD VOLTAGE (V)

Fig. 2 Typical Fwd Characteristics

T, TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

175

100

T_j= 25°C

f = 1MHz

T_j= 150°c

Single Half

Sine Wave

(JEDEC Method)

150

125

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60 Hz

Fig. 4 Typical Junction Capacitance

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

10,000

1000

T_j= 150°C

T_j= 100°C

100

T_j= 125°C

1.0

T_j= 25°C

0.1

0.01

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

UR8KB05 – UR86KB100

www.senocn.com

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