1C6626BGK-R [SENSITRON]
Rectifier Diode, 1 Phase, 1 Element, 2.3A, 200V V(RRM), Silicon, DIE-2;
| 型号： | 1C6626BGK-R |
| 厂家： | 
SENSITRON |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 2.3A, 200V V(RRM), Silicon, DIE-2 |
| 文件： | 总3页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1C6626 thru 1C6631
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 877, REV. C
SILICON ULTRA-FAST RECOVERY EPITAXIAL
RECTIFIER DIE
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Glass Passivated Epitaxial Diode with Mesa Structure
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop and Low Reverse Current
Electrically and Mechanically Stable during and after Packaging
MAX. RATINGS / ELECTRICAL CHARACTERISTICS All ratings are at TA = 25oC unless otherwise specified.
Rating
Symbol
Condition
Max
Units
WORKING PEAK REVERSE VOLTAGE
1C6626
1C6627
1C6628
1C6629
1C6630
1C6631
200
400
600
800
900
1000
VRWM
Volts
AVERAGE RECTIFIED FORWARD CURRENT
1C6626 thru 1C6628
2.3
1.8
Io
TA= 75 oC
Tp=8.3ms
Tj = 25 oC
Tj = 150 oC
Amps
A(pk)
1C6629 thru 1C6631
PEAK FORWARD SURGE CURRENT
1C6626 thru 1C6630
1C6631
IFSM
75
60
MAXIMUM REVERSE CURRENT
1C6626 thru 1C6630
1C6631
IR @ VRWM
2.0
4.0
Amps
Amps
MAXIMUM REVERSE CURRENT
1C6626 thru 1C6630
1C6631
IR @ VRWM
500
600
MAX. PEAK FORWARD VOLTAGE (PULSED)
1C6626 thru 1C6628
IF=4A
IF=3A
IF=2A
1.50
1.70
1.95
VFM
Volts
ns
1C6629 to 1C6630
1C6631
MAXIMUM REVERSE RECOVERY TIME
1C6626 thru 1C6628
1C6629 to 1C6630
IF=0.5A
IRM =1.0A
30
50
60
Trr
1C6631
©2016 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com
1C6626 thru 1C6631
SENSITRON
_
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 877, REV. C
Dimensions in inches (mm):
B o ttom s id e m e ta liz atio n : T i/N i/A g - 3 0 kÅ m in im um .
T o p s id e m eta liz a tio n : A l - 2 5 kÅ m in im u m
B o ttom s id e is c ath o d e , to p s id e is a n o d e .
0.049 0.003
0.065 0.003
(1.245 0.076) (1.651 0.076)
0.009 ± 0.002 (0.229 ± 0.051)
PART ORDERING INFORMATION:
1CXXXX XX X -X
Part Number
Metal Combinations (blank is Al top/Ag bottom):
Suffix
Top
Bottom
Part Number
1C6626
1C6626AG
1C6626BB
1C6626BG
1C6626GG
1C6626GB
blank
Al
Al
Ag
Au
Ag
Au
Au
Ag
AG
BB
BG
GG
GB
Ag
Ag
Au
Au
A = Ti (0.3 kA) / Al (25 kA)
B = Ti (1.2 kA) / Ni (1.8 kA) / Ag (30kA)
G = Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA) (TOP) / Ti (1.2 kA) / Ni (1.8 kA) / Au (4kA) (BOTTOM)
Quality Level (blank is commercial level):
Suffix
Part Number
Description
blank
1C6626
Commercial level
H
K
1C6626H
1C6626AGK
Class H level
Class K level Al top/Au bottom
Polarity (blank is anode top/cathode bottom):
Suffix
Top
Bottom
Part Number
1C6626
1C6626AGK-R
blank
-R
Anode
Cathode
Cathode
Anode
©2016 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com
1C6626 thru 1C6631
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 877, REV. C
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the
latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic
equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature
assured safety or by means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the
datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage
resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission
of Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application
will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or
any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with
related laws and regulations.
©2016 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com
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