1C6643H [SENSITRON]
0.3A, 50V, SILICON, SIGNAL DIODE, DIE-1;
| 型号： | 1C6643H |
| 厂家： | 
SENSITRON |
| 描述： | 0.3A, 50V, SILICON, SIGNAL DIODE, DIE-1 |
| 文件： | 总3页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1C6638, 1C6642,1C6643
SMALL SIGNAL/COMPUTER DIODE
CHIP
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1188, REV D
SMALL SIGNAL / COMPUTER DIODE CHIP
FEATURES / BENEFITS:
Die fabricated on a MIL-PRF-19500 manufacturing line
Class H and Class K element evaluation available
All ratings are @ TA = 25 °C unless otherwise specified
ELECTRICAL CHARACTERISTICS:
MAXIMUM RATINGS
RATING
ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED
SYMBOL
MAX.
UNITS
PIV
Volts
PEAK INVERSE VOLTAGE
(IR = 100 A)
1C6643
1C6642
1C6638
75
100
150
WORKING PEAK REVERSE VOLTAGE
VRWM
Volts
1C6643
1C6642
1C6638
50
75
125
MAXIMUM AVERAGE DC OUTPUT CURRENT
PEAK SINGLE CYCLE SURGE CURRENT
IO
0.3
2.5
Amps
Amps
OC
(tp = 8.3 ms, half sine wave)
IFSM
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, stg
-65 to
+175
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP
(IF = 10 mA; pulsed)
VF1
Volts
All parts
(IF = 200 mA; pulsed)
1C6638
0.8
1.1
1.2
VF2
(IF = 100 mA; pulsed)
1C6642,1C6643
(IF = 10 mA; pulsed at TA = 150 ºC)
1C6638
VF3
.65
.80
1C6642, 1C6643
REVERSE CURRENT
(VR = 20 Vdc)
IR1
nA dc
1C6643
1C6642
35
25
1C6638
50
(VR = VRWM
)
IR2
IR3
500
nA dc
µA dc
(TA=150oC,VR = 20 Vdc)
1C6638,1C6642
1C6643
50
75
©2016 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
1C6638, 1C6642,1C6643
SMALL SIGNAL/COMPUTER DIODE
CHIP
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1188, REV D
(TA=150oC,VR = VRWM
)
IR4
µA dc
1C6638,1C6642,1C6643
100
CAPACITANCE
(VR = 0 Vdc; Vsig=50 mV(p-p) f = 1 MHz
1C6638
1C6642, 1C6643
(VR = 1.5 Vdc; Vsig=50 mV(p-p) f = 1 MHz
1C6638
CT1
CT2
2.5
5.0
pF
2.0
2.8
1C6642, 1C6643
MAXIMUM REVERSE RECOVERY TIME
(IF = IR = 10 mA, IRR = 1mA)
trr
nsec
ns
6.0
5.0
4.5
1C6643
1C6642
1C6638
MAXIMUM FORWARD RECOVERY TIME
(IF = 200mA)
tfr
20
PACKAGE DIMENSIONS (inches/mm):
anode
cathod
0.0075±0.001
0.011±0.003
(0.279±0.076)
0.020±0.003
(0.508±0.076)
Anode
©2016 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
1C6638, 1C6642,1C6643
SMALL SIGNAL/COMPUTER DIODE
CHIP
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1188, REV D
PART ORDERING INFORMATION:
1CXXXX XX X -X
Part Number
Metal Combinations (blank is Al top/Ag bottom):
Suffix
Top
Bottom
Part Number
1C6642
1C6642AG
1C6642BB
1C6642BG
1C6642GG *
1C6642GB *
blank
Al
Al
Ag
Au
Ag
Au
Au
Ag
AG
BB
BG
GG
GB
Ag
Ag
Au
Au
A = Ti (0.3 kA) / Al (25 kA)
B = Ti (1.2 kA) / Ni (1.8 kA) / Ag (30kA)
G = Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA) (TOP) / Ti (1.2 kA) / Ni (1.8 kA) / Au (4kA) (BOTTOM)
Quality Level (blank is commercial level):
Suffix
Part Number
Description
blank
1C6632
Commercial level
H
K
1C6642H
1C6642AGK
Class H level
Class K level Al top/Au bottom
Polarity (blank is anode top/cathode bottom):
Suffix
Top
Bottom
Part Number
1C6642
blank
Anode
Cathode
* for Gold top metal, solder reflow temperature must be below 300 ºC
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that featurree aassssuurreedd ssaaffeettyy oorr bbyy means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according too tthhee ddaattaasshheeeett((ss)).. SSeennssiittrroonn SSeemmiiccoonndduuccttoor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2016 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
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