ES1G-GT3 [SENSITRON]
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN;
| 型号： | ES1G-GT3 |
| 厂家： | 
SENSITRON |
| 描述： | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN 瞄准线 光电二极管 |
| 文件： | 总3页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SENSITRON
ES1A – ES1M
SEMICONDUCTOR
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
Data Sheet 2621, Rev. A
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Features
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Glass Passivated Die Construction
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
A
F
C
H
G
E
SMA/DO-214AC
Mechanical Data
Dim Min Max Min
Max
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Case: Low Profile Molded Plastic
Terminals: Solder Plated, Solderable
A
B
C
D
E
F
2.50 2.90 0.098 0.114
4.00 4.60 0.157 0.181
1.40 1.60 0.055 0.063
0.152 0.305 0.006 0.012
4.80 5.28 0.189 0.208
2.00 2.44 0.079 0.096
0.051 0.203 0.002 0.008
0.76 1.52 0.030 0.060
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
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G
H
Weight: 0.064 grams (approx.)
In mm
In inch
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J ES1K ES1M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
150
105
200
140
300
400
280
600
420
800 1000
V
RMS Reverse Voltage
VR(RMS)
IO
210
1.0
560
700
V
A
Average Rectified Output Current
@TL = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
IRM
0.975
1.35
60
1.60
100
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
500
µA
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
trr
Cj
50
nS
pF
45
35
RθJL
Tj, TSTG
K/W
°C
Operating and Storage Temperature Range
-50 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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,
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1.00
Tj = 25°C
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Pulse width = 300µs
10
Resistive or Inductive load
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0.75
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ES1E - ES1G
ES1A - ES1D
1.0
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0.50
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ES1J-ES1M
0.1
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0.25
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0.01
0
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75
100 125
150 175
( ° C)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
25
50
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VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TL, LEAD TEMPERATURE
Fig. 1 Forward Current Derating Curve
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30
100
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Tj = 25°C
f = 1.0MHz
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
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20
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10
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10
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1
0
1
10
VR, REVERSE VOLTAGE (V)
100
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Pea Forward Surge Current
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
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Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
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Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
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regulations.
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相关型号：
ES1G-L-TP
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
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ES1G-LTP
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
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ES1G-T3
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
SENSITRON
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