HER1603PT-G [SENSITRON]
Rectifier Diode, 1 Phase, 2 Element, 16A, 200V V(RRM), Silicon, GREEN, PLASTIC, TO-3P, 3 PIN;
| 型号： | HER1603PT-G |
| 厂家： | 
SENSITRON |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 16A, 200V V(RRM), Silicon, GREEN, PLASTIC, TO-3P, 3 PIN |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SENSITRON
ꢀ
HER1601PT-G – HER1606PT-G
SEMICONDUCTOR
16A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
Green Products
Data Sheet 4847, Rev. -
ꢀ
Features
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l
Glass Passivated Die Construction
H
TO-3P
l
l
l
l
l
Ultra-Fast Switching
High Current Capability
Dim
A
B
C
D
E
Min
3.20
4.59
Max
Min
Max
3.50 0.126 0.138
5.16 0.181 0.203
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
S
R
J
20.80 21.30 0.819 0.839
19.70 20.20 0.776 0.795
K
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2.10
0.51
2.40 0.083 0.094
0.76 0.020 0.030
Classification 94V-O
ꢀ ꢀ ꢀꢀꢀ ꢀ ꢀ ꢀ Gꢀ ꢀreen Products in Compliance with the
RoHS Directive
PIN1
2
3
G
H
J
L
P
15.90 16.40 0.626 0.646
1.70
3.10 Ø
3.50
2.70 0.067 0.106
3.30
K
L
0.12 Ø 0.130
Mechanical Data
l
l
N
4.51 0.138 0.178
5.70 0.205 0.224
1.22 0.044 0.048
3.30 0.114 0.130
Case: Molded Plastic
M
N
P
5.20
1.12
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
M
2.90
A
R
S
11.70 12.80 0.46 0.504
l
l
l
B
4.30 Typical
0.169Typical
Weight: 5.6 grams (approx.)
Mounting Position: Any
In mm
In inch
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l
Marking: Type Number
C
ꢀ
ꢀ
ꢀ
PIN 1 +
PIN 3 -
+
G
Case PIN 2
D
E
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Maximum Ratings and Electrical Characteristics @T =25° unless otherwise specified
ꢀꢁꢂꢀ
A
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HER
HER
HER
HER
HER
HER
HER
HER
Characteristic
Symbol
Unit
1601PT-G 1602PT-G 1603PT-G 1604PT-G 1605PT-G 1606PT-G 1607PT-G 1608PT-G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
300
210
400
280
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current @TC = 100° C
16
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
200
A
Forward Voltage
@IF = 8.0A
VFM
1.0
1.3
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25° C
@TA = 125° C
10
500
IRM
µ A
Reverse Recovery Time (Note 1)
trr
Cj
50
85
80
60
nS
pF
° C
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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SENSITRON
ꢀ
HER1601PT-G – HER1606PT-G
SEMICONDUCTOR
16A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
Green Products
Data Sheet 4847, Rev. -
ꢀ
20
100
ꢀ
16
12
1601PT - 1604PT
1605PT
10
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8
1606PT - 1608PT
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1.0
4
Pulse width = 300µs
2% duty cycle
0.1
0
0
0.6
1.2
1.8
0
50
100
150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
400
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8.3 ms single half-sine-wave
JEDEC method
Tj = 25°C
f = 1.0MHz
ꢀ
ꢀ
ꢀ
200
HER1601PT-G -
HER1605PT-G
100
ꢀ
HER1606PT-G -
HER1608PT-G
100
10
0
1
0.1
1.0
10
100
10
50
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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ꢀ
HER1601PT-G-HER1606PT-G
SENSITRON
ꢀ
16A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
SEMICONDUCTOR
Data Sheet 4846, Rev. –
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
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5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
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6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
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相关型号：
HER1604A
Rectifier Diode, 1 Phase, 2 Element, 16A, 300V V(RRM), Silicon, TO-220AB, PLASTIC, TO-220, 3 PIN
RECTRON
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