LC3KP28A [SENSITRON]
Trans Voltage Suppressor Diode, 3000W, 28V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, P-600, 2 PIN;
| 型号： | LC3KP28A |
| 厂家： | 
SENSITRON |
| 描述： | Trans Voltage Suppressor Diode, 3000W, 28V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, P-600, 2 PIN 局域网 二极管 |
| 文件： | 总3页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SENSITRON
LC3KP28A
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
SEMICONDUCTOR
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
3000W LOW CAPACITANCE TVS
Data Sheet 5010, Rev. —
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ꢀ
ꢀ
Features
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ꢀ
Glass Passivated Die Construction
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ꢀ
ꢀꢀꢀ ꢀ ꢀ ꢀ3ꢀ0ꢀ0ꢀ0ꢀWꢀ ꢀ ꢀPꢀeꢀaꢀkꢀ ꢀPꢀuꢀlꢀsꢀeꢀPꢀ ꢀoꢀwꢀeꢀrꢀ Dꢀ ꢀissipation
ꢀꢀꢀ ꢀ ꢀ ꢀ5ꢀ.0ꢀ ꢀVꢀ –ꢀ ꢀ1ꢀ7ꢀ0ꢀ Vꢀ ꢀSꢀ ꢀtaꢀnꢀdꢀ oꢀ fꢀf Voltage
A
B
A
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ꢀꢀꢀ ꢀ ꢀ ꢀEꢀxꢀcꢀeꢀlꢀleꢀnꢀtꢀ Cꢀ ꢀlaꢀ mꢀ ꢀpꢀiꢀnꢀgꢀ Cꢀ ꢀaꢀpꢀaꢀbꢀiꢀliꢀtyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀꢀꢀ ꢀ ꢀ ꢀFꢀaꢀsꢀtꢀRꢀ ꢀeꢀsꢀpꢀoꢀnꢀsꢀeꢀ ꢀTꢀimꢀ ꢀeꢀ ꢀ ꢀ
ꢀꢀꢀ ꢀ ꢀ ꢀPꢀlꢀaꢀsꢀtiꢀcꢀCꢀ ꢀaꢀsꢀeꢀ Mꢀ ꢀaꢀtꢀeꢀrꢀiaꢀlꢀhꢀaꢀ sꢀ ꢀUꢀ Lꢀ ꢀFꢀlꢀaꢀmꢀ mꢀ ꢀaꢀbꢀiꢀliꢀtyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
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Classification Rating 94V-O
!" $ꢁꢀꢂꢃꢄꢅꢆꢇꢈ%ꢃꢉꢀꢊꢈꢋꢃꢀ&ꢀ'224235ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ C
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
D
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Schematic
P-600
ꢀꢀꢀ ꢀ ꢀ ꢀCꢀaꢀ sꢀ eꢀ :ꢀ ꢀJꢀEꢀDꢀEꢀ ꢀCꢀ ꢀPꢀ-ꢀ6ꢀ0ꢀ0 Molded Plastic
Dim Min Max
Min
Max
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ꢀTerminals: Axial Leads, Solderable per
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀMꢀ ꢀIꢀLꢀ-ꢀSꢀ Tꢀ ꢀDꢀ-ꢀ7ꢀ50, Method 2026
ꢀPꢀoꢀlaꢀ ꢀriꢀtyꢀ:ꢀCꢀ ꢀaꢀthꢀ ꢀoꢀdꢀeꢀ Bꢀ ꢀand or Cathode Notch
Diode
A
B
C
D
25.4
—
1.000
—
8.60 9.10 0.339 0.358
1.20 1.30 0.047 0.051
8.60 9.10 0.339 0.358
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Transient
Voltage
Suppressor
ꢀꢀꢀ ꢀ ꢀ ꢀWꢀ ꢀeꢀigꢀhꢀ tꢀ:ꢀ2ꢀ.ꢀ1ꢀ0ꢀ gꢀ ꢀraꢀ mꢀ ꢀsꢀ (approx.)
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In mm
In inch
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Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
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Characteristic
Symbol
Value
Unit
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Peak Pulse Power Dissipation at TA = 25°C (Note 1, 2, 5) Figure 1
Peak Forward Surge Current per Figure 6 (Note 3)
PPPM
IFSM
IPPM
PM(AV)
VRWM
VBR
VBR
IT
3000 Minimum
W
A
250
See Table 1
8.0
ꢀ
Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 3
A
Steady State Power Dissipation (Note 2, 4)
Reverse stand-off voltage
W
V
28
Min.Breakdown voltage @IT
31.1
35.8
1.0
V
Max.Breakdown voltage @IT
Test current
V
mA
V
Maximum clamping voltage @Ipp
Peak pulse current
VC
45.4
66.0
5.0
Ipp
A
Peak pulse leakage @VRWM
IR
µA
V
Working Inverse Blocking Voltage
Maximum Inverse Blocking Leakage Current at VWIB
Minimum Peak Inverse Bloking Voltage
VWIB
ID
75
1.0
mA
V
VPIB
100
Max. Junction Capacitance
@ 0V 1MHZ
@ 12V 1MHZ
CT
100
pF
°C
Operating and Storage Temperature Range
Tj, TSTG
-55 to +175
Note: 1. Non-repetitive current pulse, per Figure 1 and derated above TA = 25°C per Figure 4
2. Mounted on 20mm2 copper pad
3. 8.3ms single half sine-wave duty cycle = 4 pulses per minutes maximum
4. Lead temperature at 75°C = TL
5. Peak pulse power waveform is 10/1000µS
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LC3KP28A
SENSITRON
SEMICONDUCTOR
Data Sheet 5010, Rev. —
3000W LOW CAPACITANCE TVS
Fig. 2 - AC Line Protection Application
ꢀ
tr = 10µs
100
50
0
Peak Value Ipp
ꢀ
Low Capacitance
TVS
Half Value Ipp/2
tp
10 X 1000 Waveform
as defined by R.E.A.
Application Note: Device must be used
with two units in parallel, opposite in polarity
as shown in circuit for AC signal line
protection.
3
0
1
2
t, TIME (ms)
Fig. 1 Pulse Waveform
1000
100
10
1.0
0.1
1.0
10
100
1000
10,000
TP, PULSE WIDTH (µs)
Fig. 3 Pulse Derating Curve
100
75
6.0
Single Phase
Half-Wave 60Hz
Resistive or
Inductive Load
4.5
L = 9.5 mm
50
25
0
3.0
1.5
20 x 20 x 1 mm Cu
10 X 1000 Waveform
as defind by REA
0
0
25
50
75 100 125 150 175 200
200
25
50
75
100 125 150 175
0
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 Pulse Derating Curve
T , LEAD TEMPERATURE (°C)
L
Fig. 5 Steady State Power Derating
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ꢀ
SENSITRON
ꢀ
LC3KP28A
ꢀ
SEMICONDUCTOR
3000W LOW CAPACITANCE TVS
ꢀ
Data Sheet 5010, Rev. —
ꢀ
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
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