MBRB2050CT [SENSITRON]
Rectifier Diode, Schottky, 1 Phase, 2 Element, Silicon, PLASTIC, D2PAK-3;型号: | MBRB2050CT |
厂家: | SENSITRON |
描述: | Rectifier Diode, Schottky, 1 Phase, 2 Element, Silicon, PLASTIC, D2PAK-3 二极管 |
文件: | 总5页 (文件大小:231K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR2050/2060CT
SENSITRON
MBRB2050/2060CT
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SEMICONDUCTOR
MBR2050/2060CT-1
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Technical Data
Data Sheet 2803, Rev. B
MBR2050/2060CT MBRB2050/2060CT
MBR2050/2060CT-1 SCHOTTKY RECTIFIER
Applications:
·
Switching power supply · Converters · Free-Wheeling diodes · Reverse battery protection
Features:
·
150
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
TJ operation
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·
·
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High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Case styles
MBR2050CT
MBR2060CT
MBRB2050CT
MBRB2060CT
MBR2050CT-1
MBR2060CT-1
TO-220
D2PAK
TO-262
Mechanical Dimensions: In Inches / mm
TO-220AB
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MBR2050/2060CT
SENSITRON
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MBRB2050/2060CT
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SEMICONDUCTOR
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MBR2050/2060CT-1
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Data Sheet 2803, Rev. B
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· 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 ·
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· World Wide Web Site - http://www.sensitron.com· E-Mail Address - sales@sensitron.com ·
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MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
SENSITRON
SEMICONDUCTOR
Data Sheet 2803, Rev. B
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
50
60
MBR2050CT
MBRB2050CT-1
MBR2050CT-1
MBR2060CT
MBRB2060CT-1
MBR2060CT-1
20
V
Max. Average Forward
IF(AV)
50% duty cycle @TC =135°C,
rectangular wave form
A
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
150
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg)*
Symbol
Condition
Max.
0.80
0.95
Units
V
VF1
@ 10A, Pulse, TJ = 25 °C
@ 20 A, Pulse, TJ = 25 °C
@ 10 A, Pulse, TJ = 125 °C
@ 20 A, Pulse, TJ = 125 °C
VF2
IR1
0.70
0.85
V
Max. Reverse Current (per
leg)*
@VR = rated V
R
0.15
150.0
400
mA
mA
pF
TJ = 25 °C
IR2
@VR = rated V
TJ = 125 °C
R
Max. Junction Capacitance
(per leg)
Max. Voltage Rate of Change
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz
-
dv/dt
10,000
V/µs
* Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Maximum Thermal
Resistance Junction to Case
(per package)
Symbol
TJ
Condition
Specification
-55 to +175
-55 to +175
2.0
Units
°C
°C
-
-
Tstg
DC operation
RθJC
RθJC
RθCS
°C/W
DC operation
1.0
°C/W
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
Mounting surface,
smooth and greased
(only for TO-220)
0.50
Approximate Weight
Mounting Torque
wt
TM
-
-
2
g
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D2PAK TO-262(Suffix”-1” for TO-262,”MBRB x” for D2PAK)
Data Sheet 2921, Rev. –
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
SENSITRON
SEMICONDUCTOR
Data Sheet 2803, Rev. B
Typical Forward Characteristics
Typical Reverse Characteristics
2
10
175 °C
150 °C
125 °C
100 °C
1
10
175 °C
0
10
1
10
75 °C
50 °C
25 °C
-1
10
-2
10
-3
10
125 °C
25 °C
0
10
20
30
40
50
60
Reverse Voltage - V (V)
R
Typical Junction Capacitance
400
350
300
250
200
150
100
0
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
10
20
30
40
50
60
Forward Voltage Drop - V (V)
Reverse Voltage - V (V)
F
R
· 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 ·
· World Wide Web Site - http://www.sensitron.com· E-Mail Address - sales@sensitron.com ·
MBR2050/2060CT
SENSITRON
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MBRB2050/2060CT
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SEMICONDUCTOR
MBR2050/2060CT-1
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Data Sheet 2803, Rev. B
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DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
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