MURC110-R [SENSITRON]
100V, SILICON, SIGNAL DIODE, DIE-1;
| 型号： | MURC110-R |
| 厂家： | 
SENSITRON |
| 描述： | 100V, SILICON, SIGNAL DIODE, DIE-1 二极管 |
| 文件： | 总5页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURC105-MURC160
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
MURC105-MURC160
Ultrafast Silicon Die
Applications:
Switching Power Supply General Purpose Free-Wheeling Diodes Polarity Protection Diode
Features:
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Symbol
MURC
105
MURC
110
MURC
115
MURC MURC
MURC MURC
MURC
160
Unit
120
130
140
150
Peak Inverse Voltage
VRWM
IF(AV)
50
100
150
200
300
400
500
600
V
A
Average Rectified Forward
Current(Square Wave
Mounting Method #3 Per
Note1)
1.0 @ TA = 130C
1.0 @ TA = 120C
Max. Peak One Cycle Non-
Repetitive Surge Current
8.3 ms, half Sine pulse
IFSM
35
A
Operating Junction
Temperature and Storage
Temperature
TJ, Tstg
-65 to +175
C
Electrical Characteristics:
Characteristics
Symbol
MURC
105
MURC
110
MURC
115
MURC MURC
MURC MURC
MURC
160
Unit
120
130
140
150
Max. Forward Voltage Drop
(Note1)
(IF = 1.0 Amp, TJ = 150 C)
(IF = 1.0 Amp, TJ = 25 C)
VF
V
0.710
0.875
1.05
1.25
Max. Reverse Current (Note1)
(Rated DC Voltage, TJ = 150 C)
(Rated DC Voltage, TJ = 25 C)
IR
A
50
2.0
150
5.0
Max Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 A/s)
(IF = 0.5 Amp, IR = 1.0 A,
IREC=0.25A)
trr
nS
35
25
75
50
Max. Junction Capacitance
@VR = 5V, TC = 25 C
fSIG = 1MHz, VSIG = 50mV (p-p)
Max Forward Recovery Time
(IF = 1.0 Amp, di/dt = 50 A/s,
IREC to 1.0V)
CT
Tfr
30
25
10
50
pF
nS
1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2%
©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 http://www.sensitron.com sales@sensitron.com
MURC105-MURC160
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
Dimensions in inches (mm)
Top side metalization - Aluminum - 25 kÅ
Bottom side metalization - Titanium 1.2 kÅ,
Nickel 1.8 kÅ, Silver - 30 kÅ minimum
ANODE
A
B
Bottom side is cathode, top side is anode.
See part ordering information for different options
Anode
C
Cathode
Die type
Area (mil2)
34 x 34
Dimension A (1)
Inch (millimeter)
0.034 (0.864)
Dimension B (1)
Inch (millimeter)
0.020 (0.508)
Dimension C (2)
Inch (millimeter)
0.009 (0.229)
(1)
Si p-n die
Tolerance is ± 0.003” (0.076 mm)
(2) Tolerance is ± 0.001” (0.025 mm)
©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 http://www.sensitron.com sales@sensitron.com
MURC105-MURC160
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
MURC105, MURC110, MURC115, MURC120
(631) 586-7600 FAX (631) 242-9798 http://www.sensitron.com sales@sensitron.com
MURC105-MURC160
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
MURC130, MURC140, MURC150, MURC160
©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 http://www.sensitron.com sales@sensitron.com
MURC105-MURC160
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
PART ORDERING INFORMATION
Default part number is Al top, Ag bottom.
Add the following suffix for these metal combinations:
Suffix
Top
Bottom
Part Number
Al
Al
Ag
Ag
Au
Au
Ag
Au
Ag
Au
Au
Ag
MURC105
AG
BB
BG
GG
GB
-R
MURC105AG
MURC105BB
MURC105BG
MURC105GG
MURC105GB
MURC105-R
- Reverse polarity -
A = Ti (0.3 kA) / Al (25 kA)
B = Ti (1.2 kA) / Ni (1.8 kA) / Ag (30kA)
G = Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA) (TOP) / Ti (1.2 kA) / Ni (1.8 kA) / Au (4kA) (BOTTOM)
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 http://www.sensitron.com sales@sensitron.com
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