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RS1D-GT3 [SENSITRON]

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN;
RS1D-GT3
型号： RS1D-GT3
厂家： SENSITRON    SENSITRON
描述：

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
文件： 总3页 (文件大小：171K)
中文：  中文翻译
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RS1A – RS1M  
SENSITRON  
SEMICONDUCTOR  
Data Sheet 2712, Rev. A  
Features  
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER  
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Glass Passivated Die Construction  
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Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop, High Efficiency  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Fast Recovery Time  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
B
A
F
C
H
G
E
SMA/DO-214AC  
Mechanical Data  
Dim Min Max Min  
Max  
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Case: Molded Plastic  
A
B
C
D
E
F
2.50 2.90 0.098 0.114  
4.00 4.60 0.157 0.181  
1.40 1.60 0.055 0.063  
0.152 0.305 0.006 0.012  
4.80 5.28 0.189 0.208  
2.00 2.44 0.079 0.096  
0.051 0.203 0.002 0.008  
0.76 1.52 0.030 0.060  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
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Weight: 0.064 grams (approx.)  
G
H
In mm  
In inch  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol RS1A RS1B RS1D RS1G  
RS1J RS1K RS1M  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
V
A
Average Rectified Output Current  
@TL = 90°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.30  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
300  
µA  
Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
trr  
Cj  
150  
250  
500  
nS  
pF  
10  
32  
RθJL  
Tj, TSTG  
K/W  
°C  
Operating and Storage Temperature Range  
-50 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on P.C. Board with 8.0mm2 land area.  
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1.2  
10  
1.0  
0.8  
1.0  
0.6  
0.4  
0.2  
0.1  
Tj = 25°C  
IF Pulse Width: 300µs  
0.01  
0
0
0.4  
0.8  
1.2  
1.6  
25  
50  
75  
100  
125  
150  
( ° C)  
175  
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TL, LEAD TEMPERATURE  
Fig. 1 Forward Current Derating Curve  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
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30  
20  
1000  
Single Half-Sine-Wave  
(JEDEC Method)  
Tj = 125°C  
Tj = 150°C  
100  
10  
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10  
Tj = 25°C  
1.0  
0.1  
0
0
20  
40  
60  
80 100  
120 140  
1
10  
100  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Forward Surge Current Derating Curve  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 4 Typical Reverse Characteristics  
trr  
+0.5A  
50Ω NI (Non-inductive)  
10Ω NI  
Device  
Under  
Test  
(-)  
0A  
(+)  
(-)  
Pulse  
Generator  
(Note 2)  
50V DC  
Approx  
-0.25A  
1.0Ω  
NI  
(+)  
Oscilloscope  
(Note 1)  
Notes:  
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.  
2. Rise Time = 10ns max. Input Impedance = 50Ω.  
-1.0A  
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Set time base for 10ns/cm  
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Fig. 5 Reverse Recovery Time Characteristic and Test Circuit  
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •  
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •  
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SENSITRON  
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SEMICONDUCTOR  
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ꢀꢁꢂꢁꢃꢄꢅꢆꢆꢂꢃ2712,ꢃꢇꢆꢈꢉAꢃ  
DISCLAIMER:  
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve  
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest  
version of the datasheet(s).  
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,  
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by  
means of users’ fail-safe precautions or other arrangement .  
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during  
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual  
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.  
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from  
use at a value exceeding the absolute maximum rating.  
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.  
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of  
Sensitron Semiconductor.  
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will  
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third  
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and  
regulations.  
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