SD200SB100C [SENSITRON]
SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage; 硅肖特基整流器DIE超低反向漏
| 型号： | SD200SB100C |
| 厂家： | 
SENSITRON |
| 描述： | SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SENSITRON
SEMICONDUCTOR
SD200SB100A/B/C
TECHNICAL DATA
DATA SHEET 242, REV -
SILICON SCHOTTKY RECTIFIER DIE
Ultra Low Reverse Leakage
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after packaging
Out Performs 100 Volt Ultrafast Rectifiers
Maximum Ratings:
Characteristics
Symbol
VRWM
IF(AV)
Condition
-
Max.
100
60
Units
V
A
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
50% duty cycle, rectangular
wave form
IFSM
EAS
IAR
10 ms, Sine pulse (1)
720
15
1
A
mJ
A
TJ = 25 C, IAS = 1 A,
L = 30mH
Repetitive Avalanche
Current
IAS decay linearly to 0 in 1 ms
limited by TJ max VA=1.5VR
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
-
-
-55 to +175
-55 to +175
C
C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
0.87
0.72
30
Units
V
V
Max. Forward Voltage Drop
VF1
VF2
IR1
@ 60A, Pulse, TJ = 25 C
@ 60A, Pulse, TJ = 125 C
@VR = 100V, Pulse,
TJ = 25 C
Max. Reverse Current
mA
IR2
CT
@VR = 100V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
ISIG = 50mV (p-p)
3.0
mA
pF
Max. Junction Capacitance
(1) in SHD package
1500
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SD200SB100A/B/C
TECHNICAL DATA
DATA SHEET 242, REV -
Rectifier Die Outlines
Bottom side metalization Ag - 30 kA
minimum.
A
B
Top side metalization Al - 25 kA minimum
or Ag - 30 kA minimum.
Bottom side is cathode, top side is anode.
C
Nominal Size
(Inches)
A
B
C
Die Type
SCHOTTKY
Inches (mm)
+/- .003 (.077)
.200 (5.08)
Inches (mm)
+/- .003 (.077)
.191 (4.85)
Inches (mm)
+/- .001 (.026)
.014 (0.36)
.200
Metalization
A = Aluminum Top/ Silver Bottom
B = Silver Top/ Silver Bottom
C = Silver Bottom/ Aluminum Plated Molybdenum Tab Top
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
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operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
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• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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