SHD114436B [SENSITRON]

POWER SCHOTTKY RECTIFIER LOW REVERSE LEAKAGE; 功率肖特基整流器低反向漏
SHD114436B
型号: SHD114436B
厂家: SENSITRON    SENSITRON
描述:

POWER SCHOTTKY RECTIFIER LOW REVERSE LEAKAGE
功率肖特基整流器低反向漏

整流二极管 瞄准线 功效
文件: 总3页 (文件大小:64K)
中文:  中文翻译
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SHD114436  
SHD114436A  
SHD114436B  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 4512, REV. -  
POWER SCHOTTKY RECTIFIER  
Low Reverse Leakage  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Ultra Low Reverse Leakage Current  
Soft Reverse Recovery at Low and High Temperature  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Capacity  
Guard Ring for Enhanced Durability and Long Term Reliability  
Guaranteed Reverse Avalanche Characteristics  
Maximum Ratings:  
Characteristics  
Symbol  
VRWM  
IF(AV)  
Condition  
-
50% duty cycle, rectangular  
wave form  
Max.  
200  
30  
Units  
V
A
Peak Inverse Voltage  
Max. Average Forward  
Current  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Non-Repetitive Avalanche  
Energy  
Repetitive Avalanche  
Current  
IFSM  
EAS  
IAR  
8.3 ms, half Sine wave  
(per leg)  
TJ = 25 °C, IAS = 1.3 A,  
L = 40mH (per leg)  
IAS decay linearly to 0 in 1 µs  
ƒ limited by TJ max VA=1.5VR  
570  
27  
A
mJ  
A
1.3  
Thermal Resistance  
Max. Junction Temperature  
Max. Storage Temperature  
RthJC  
TJ  
Tstg  
Per Package  
0.50  
-65 to +200  
-65 to +200  
°C/W  
°C  
°C  
-
-
Electrical Characteristics:  
Characteristics  
Symbol  
Condition  
Max.  
Units  
Max. Forward Voltage Drop  
VF1  
0.92  
V
@ 30A, Pulse, TJ = 25 °C  
(per leg) measured at the leads  
VF2  
IR1  
IR2  
CT  
0.76  
0.030  
2.0  
V
@ 30A, Pulse, TJ = 125 °C  
(per leg) measured at the leads  
@VR = 200V, Pulse,  
TJ = 25 °C (per leg)  
@VR = 200V, Pulse,  
Max. Reverse Current  
mA  
mA  
pF  
TJ = 125 °C (per leg)  
Max. Junction Capacitance  
600  
@VR = 5 V, TC = 25 °C  
fSIG = 1 MHz,  
VSIG = 50mV (p-p) (per leg)  
Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should  
be expected, unlike conventional lower voltage Schottkys.  
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  
SHD114436  
SHD114436A  
SHD114436B  
SENSITRON  
TECHNICAL DATA  
DATA SHEET 4512, REV. –  
Mechanical Dimensions: in inches / mm  
.560±.020  
.550?020  
(14.0?508)  
.410±.010  
(10.4±.254)  
(14.2±.508)  
.410?010  
(10.4?254)  
.410±.010  
(10.4±.254)  
.150±.010  
(3.81±.254)  
.410?010  
(10.4?254)  
.200?010  
(5.08 ?254)  
.410±.010  
(10.4±.254)  
.410±.010  
(10.4±.254)  
.015±.005  
(.381±.127)  
.020?005 R  
(.508?127 )  
Moly Lid  
.075 (1.91) Max  
Copper Anode  
.020±.005 R  
(.508±.127 )  
.090 (2.29) Max  
Alumina Ring  
.075 (1.91)  
Moly  
.020?002  
(.508?051)  
Alumina Ring  
Moly Base  
(Cathode)  
Alumina  
.060?010  
(1.52?254)  
.015±.002  
(.381±.051)  
Moly Base  
(Cathode)  
Moly Anode  
Mol  
y
.060±.010 (1.52±.254)  
SHD-3  
SHD-3A  
SHD-3B  
Typical Reverse Characteristics  
Typical Forward Characteristics  
101  
100  
200 °C  
175 °C  
150 °C  
125 °C  
101  
10-1  
10-2  
10-3  
10-4  
10-5  
200 °C  
175 °C  
100 °C  
75 °C  
50 °C  
25 °C  
100  
125 °C  
25 °C  
0
40  
80  
120  
160  
200  
240  
Reverse Voltage - VR (V)  
Typical Junction Capacitance  
10-1  
600  
450  
300  
150  
0
25 °C  
10-2  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
40  
80  
120  
160  
200  
240  
Reverse Voltage - VR (V)  
Forward Voltage Drop - VF (V)  
Vf Curves shown are for die only.  
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DISCLAIMER:  
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product  
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version  
of the datasheet(s).  
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,  
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by  
means of users’ fail-safe precautions or other arrangement.  
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during  
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual  
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.  
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from  
use at a value exceeding the absolute maximum rating.  
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.  
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of  
Sensitron Semiconductor.  
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will  
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third  
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and  
regulations.  
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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