SHD125136P [SENSITRON]
HERMETIC POWER SCHOTTKY RECTIFIER; 密封功率肖特基整流器![SHD125136P](http://pdffile.icpdf.com/pdf1/p00113/img/icpdf/SHD125136_616982_icpdf.jpg)
型号: | SHD125136P |
厂家: | ![]() |
描述: | HERMETIC POWER SCHOTTKY RECTIFIER |
文件: | 总3页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SHD125136
SHD125136P
SHD125136N
SHD125136D
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 842, REV. A
HERMETIC POWER SCHOTTKY RECTIFIER
Low Forward Voltage Drop
(200 V, 15 A)
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Reverse Leakage Current
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
VRWM
IF(AV)
Condition
-
Max.
200
7.5
Units
V
A
Peak Inverse Voltage
Max. Average Forward
Current (whole device)
50% duty cycle @TC =100°C,
rectangular wave form
(Single & Doubler versions)
50% duty cycle @TC =100°C,
rectangular wave form
(Common Cathode & Common
Anode versions)
Max. Average Forward
Current (whole device)
IF(AV)
15
75
A
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
Non-Repetitive Avalanche
Energy (per leg)
Repetitive Avalanche
Current (per leg)
EAS
IAR
7.5
0.5
mJ
A
TJ = 25 C, IAS = 0.5 A
L =60 mH
IAS decay linearly to 0 in 1 ms
limited by TJ max VA=1.5VR
-
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
-65 to +200
-65 to +200
C
C
-
Electrical Characteristics:
Characteristics
Symbol
VF1
Condition
@ 7.5 A, Pulse, TJ = 25 C
@ 7.5 A, Pulse, TJ = 125 C
@VR = 200V, Pulse,
TJ = 25 C
Max.
1.01
0.88
0.18
Units
V
V
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
(per leg)
VF2
IR1
mA
IR2
CT
@VR = 200V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
4.0
mA
pF
Max. Junction Capacitance
(per leg)
150
VSIG = 50mV (p-p)
Maximum Thermal Resis.
(per leg)
Max. Reverse Recovery
Time
-
2.73
25
R
C/W
JC
trr
IF = 0.5 A, IR = 1.0 A,
IRM = 0.25 A, TJ = 25 C
nsec
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SHD125136
SHD125136P
SHD125136N
SHD125136D
TECHNICAL DATA
DATA SHEET 842, REV. -
Mechanical Dimensions: In Inches / mm
SINGLE
2
COMMON CATHODE
.149 (3.78
.139 3.53)
.260 (6.60
.249 6.32)
.050 (1.27
.040 1.02)
.545 (13.84
.535 13.60)
Dia.
1
3
1
2
3
.800 (20.32
.685 (17.40
.665 16.89)
COMMON ANODE
DOUBLER
.790 20.07)
.545 (13.84
.535 13.58)
1.235 (31.37
1.195 30.35)
1
2
3
1
2
3
3
2
1
.045 (1.14
.150(3.81) BSC
.150(3.81) BSC
2 Places
.035 0.89)
3 Places
TO-254
PINOUT TABLE
TYPE
PIN 1
PIN 2
PIN 3
SINGLE RECTIFIER
CATHODE
ANODE 1
CATHODE 1
ANODE
ANODE
ANODE
ANODE 2
CATHODE 2
CATHODE
DUAL RECTIFIER, COMMON CATHODE (P)
DUAL RECTIFIER, COMMON ANODE (N)
DUAL RECTIFIER, DOUBLER (D)
COMMON CATHODE
COMMON ANODE
ANODE/CATHODE
Note: The Vf curves shown are for the un-packaged die only.
Typical Reverse Characteristics
Typical Forward Characteristics
101
100
200 °C
175 °C
150 °C
125 °C
100 °C
101
10-1
10-2
10-3
10-4
10-5
200 °C
175 °C
75 °C
100
50 °C
25 °C
125 °C
0
40
80
120
160
200
240
Reverse Voltage - VR (V)
Typical Junction Capacitance
10-1
25 °C
120
80
40
0
10-2
0.1
0.3
0.5
0.7
0.9
1.1
0
40
80
120
160
200
240
Reverse Voltage - VR (V)
Forward Voltage Drop - VF (V)
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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