SHD248305 [SENSITRON]

Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18;
SHD248305
型号: SHD248305
厂家: SENSITRON    SENSITRON
描述:

Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

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中文:  中文翻译
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SENSITRON  
SEMICONDUCTOR  
SHD248305  
Technical Data  
Datasheet 4195, Rev. -  
HERMETIC POWER MOSFET  
N-CHANNEL  
FEATURES:  
·
·
·
·
500 Volt, 1.5 Ohm, 1.5A MOSFET  
Fast Switching  
Low RDS (on)  
Electrically Equivalent to IRFE430  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.  
RATING  
GATE TO SOURCE VOLTAGE  
SYMBOL  
VGS  
MIN.  
-
TYP.  
-
MAX.  
±20  
2.5  
1.6  
+150  
22  
UNITS  
Volts  
ID  
ID  
-
-
-
-
-
-
Amps  
Amps  
°C  
Watts  
°C/W  
ON-STATE DRAIN CURRENT  
ON-STATE DRAIN CURRENT  
OPERATING AND STORAGE TEMPERATURE  
@ TC = 25°C  
@ TC = 100°C  
-
-55  
-
TOP/TSTG  
PD  
TOTAL DEVICE DISSIPATION @ TC = 25°C  
THERMAL RESISTANCE, JUNCTION TO CASE  
-
5.8  
RqJC  
ELECTRICAL CHARACTERISTICS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
RDS(ON)  
500  
-
-
-
-
Volts  
VGS = 0V, ID = 1.0mA  
STATIC DRAIN TO SOURCE ON STATE RESISTANCE  
VGS = 10V, ID = 1.6A  
1.5  
W
VGS(th)  
gfs  
2.0  
1.5  
-
-
4.0  
-
Volts  
GATE THRESHOLD VOLTAGE  
FORWARD TRANSCONDUCTANCE  
VDS = 15V, IDS = 1.6A  
VDS = VGS, ID = 250mA  
S(1/W)  
ZERO GATE VOLTAGE DRAIN CURRENT  
VDS = 0.8xMax. Max. Rating, VGS = 0V  
-
-
IDSS  
IGSS  
25  
250  
100  
-100  
30  
40  
55  
30  
mA  
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125°C  
GATE TO SOURCE LEAKAGE FORWARD  
GATE TO SOURCE LEAKAGE REVERSE  
TURN ON DELAY TIME  
VGS = 20V  
VGS = -20V  
VDD = 250V,  
ID = 2.5A,  
-
-
-
-
nA  
td(ON)  
RISE TIME  
tr  
td(OFF)  
tf  
nsec  
TURN OFF DELAY TIME  
FALL TIME  
RG = 7.5W  
TOTAL GATE CHARGE  
GATE TO SOURCE CHARGE  
GATE TO DRAIN CHARGE  
DIODE FORWARD VOLTAGE  
ID = 2.5A,  
VGS = 10V,  
VDS =0.5xMax. Rating  
TC = 25°C, IS = 2.5A,  
VGS = 0V  
Qg  
Qgs  
Qgd  
VSD  
19.8  
2.2  
5.5  
-
-
-
-
-
29.5  
4.6  
19.7  
1.4  
nC  
nC  
nC  
Volts  
QRR  
trr  
-
-
-
-
7.0  
REVERSE RECOVERY CHARGE  
TJ = 25°C,  
mC  
nsec  
pF  
di/dt £ 100A/msec, VDD £ 50V  
900  
REVERSE RECOVERY TIME  
TJ = 25°C,  
IF = 2.5A,  
di/dt £ 100A/msec, VDD £ 50V  
INPUT CAPACITANCE  
OUTPUT CAPACITANCE  
REVERSE TRANSFER CAPACITANCE  
VGS = 0 V  
VDS = 25 V  
f = 1.0MHz  
Ciss  
Coss  
Crss  
-
610  
135  
65  
-
· 221 WEST INDUSTRY COURT · DEER PARK, NY 11729-4681 · PHONE (631) 586-7600 · FAX (631) 242-9798 ·  
· World Wide Web Site - http://www.sensitron.com · E-mail Address- sales@sensitron.com ·  
SHD248305  
SENSITRON  
Technical Data  
Datasheet 4195, Rev. -  
MECHANICAL DIMENSIONS: in Inches / mm  
LCC-18  
PINOUT  
DEVICE TYPE  
MOSFET  
LCC-18  
PINS 4 & 5  
GATE  
PINS 1, 2 & 15 - 18  
PINS 6 - 13  
SOURCE  
PINS 3 & 14  
N/C  
DRAIN  
· 221 WEST INDUSTRY COURT · DEER PARK, NY 11729-4681 · PHONE (631) 586-7600 · FAX (631) 242-9798 ·  
· World Wide Web Site - http://www.sensitron.com · E-mail Address- sales@sensitron.com ·  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DISCLAIMER:  
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product  
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version  
of the datasheet(s).  
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,  
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by  
means of users’ fail-safe precautions or other arrangement.  
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during  
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual  
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.  
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from  
use at a value exceeding the absolute maximum rating.  
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.  
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of  
Sensitron Semiconductor.  
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will  
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third  
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and  
regulations.  
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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