SHD418309 [SENSITRON]
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SHD-5, 3 PIN;型号: | SHD418309 |
厂家: | SENSITRON |
描述: | Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SHD-5, 3 PIN 晶体管 |
文件: | 总4页 (文件大小:115K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SHD418309
SHD418309A
SHD418309B
SENSITRON
SEMICONDUCTOR
PRELIMINARY DATA SHEET
DATA SHEET 4023, REV.-
NPN BI-POLAR POWER TRANSISTOR
Hermetic, Ceramic Package
Electrically equivalent to 2N3442
Surface Mount Package
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
140
Units
VCEO
VCBO
VEBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
V
V
160
7.0
Collector Current – Continuous
– Peak
10.0
15.0
IC
A
IB
Base Current
7.0
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Characteristic
Max
Units
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
22
0.17
5.8
W
W/°C
°C/W
PD
RθJC
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
VCEO
IEBO
ICEX
Collector-Emitter Sustain Voltage
IC = 200 mA, IB = 0
VEB = 7Vdc
VCE = 80Vdc, VBE(OFF)
1.5Vdc
140
-
-
-
5
5
V
mA
mA
Emitter-Base Cut-off Current
Collector Cutoff Current
=
ICEO
Emitter-Base Breakdown Voltage
VCE = 140Vdc, IB = 0
-
200
mA
ON CHARACTERISTICS*
hfe
DC Current Gain
IC = 3A, VCE = 4Vdc
IC = 10A, VCE = 4Vdc
IC = 10Adc, IB = 2Adc
20
7.5
-
70
-
5.0
-
V
VCE(sat)
VBE
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
IC = 10A, VCE = 4Vdc
-
5.7
V
DYNAMIC CHARACTERISTICS
fT
Current Gain – Bandwidth Product IC = 2A, VCE = 4Vdc,
f = 40 KHz
80
12
-
KHz
-
hfe
Small-Signal Current Gain
IC = 2Adc, VCE = 14Vdc,
f = 1.0 kHz
72
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SHD418309
SHD418309A
SHD418309B
SENSITRON
SEMICONDUCTOR
PRELIMINARY DATA SHEET
DATA SHEET 4023, REV.-
MECHANICAL DIMENSIONS: in Inches / mm
.520±.020
(13.2±.508)
.510±.020
(12.9±.508)
.370±.010
(9.40±.254)
.090±.010
(2.29±.254)
.370±.010
(9.40±.254)
.125±.010
(3.17±.254)
2
3
.030±.010
(.762±.254)
2
3
.370±.010
(9.40±.254)
.320±.010
(8.13 ±.254)
.030±.010
(.762±.254)
.610±.010
(15.5±.254)
.320±.010
(8.13±.254)
.610±.010
(15.5±.254)
.030±.010
(.762±.254)
2
3
.610±.010
(15.5 ±.254)
Copper Terminals
.130 (3.30) Max
.110 (2.79) Max
.020±.005 R
(.508±.127 )
Moly Lid
Moly Lid
.020±.005 R
(.508±.127 )
Alumina Ring
Alumina Ring
.110 (2.80) Max
Alumina Ring
.015±.002
(.381±.051)
Moly Base
Terminal 1
Moly Base
Terminal 1
.020±.002
(.508±.051)
.060±.010
(1.52±.254)
.060±.010
(1.52±.254)
Terminal 1
SHD-5
SHD-5A
SHD-5B
DEVICE TYPE
NPN BIPOLAR
POWER TRANSISTOR
PIN 1
PIN 2
EMITTER
PIN 2
BASE
COLLECTOR
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SHD418309
SHD418309A
SHD418309B
SENSITRON
SEMICONDUCTOR
PRELIMINARY DATA SHEET
DATA SHEET 4023, REV.-
Figure 1. Power Derating
Figure 2.
Figure 3. DC Current
Figure 4. Collector–Saturation Region
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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