SHD431006 [SENSITRON]

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, LCC-3;


型号：	SHD431006
厂家：	SENSITRON
描述：	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, LCC-3
文件：	总3页 (文件大小：48K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SHD431006

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 678, REV. -

PNP SWITCHING TRANSISTOR

SHD431006S -- S-100 (JANTX) Screening

• Hermetic, Ceramic Package

• Electrically Equivalent to 2N3906

• Surface Mount Package

Absolute Maximum Ratings*

Symbol

T_A= 25°C unless otherwise noted

Parameter

Value

-40

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current – Continuous

Operating and Storage Junction Temperature Range

-5.0

200

-55 to +150

°C

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol Characteristic

T_A= 25°C unless otherwise noted

Max

Units

P_D

R_θJC

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

690

5.55

180

mW/°C

°C/W

Electrical Characteristics

Symbol Parameter

T_A= 25°C unless otherwise noted

Test Conditions

Min Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CES

Collector-Emitter Breakdown Voltage*

I_C= 1.0 mA, I_B= 0

I_C= 10 µA, I_E= 0

I_E= 10 µA, I_C= 0

V_CE=-30V, V_BE= -3.0

V_CE= -30 V, V_BE= -3.0

-40

-5.0

Collector-Base Breakdown Voltage*

Emitter-Base Breakdown Voltage*

Collector Cutoff Current

-50

I_B

Base Cut off Current

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SHD431006

SENSITRON

DATA SHEET 678

REVISION -

Electrical Characteristics

Symbol Parameter

T_A= 25°C unless otherwise noted

Test Conditions

Min Max

Units

ON CHARACTERISTICS*

h_FE

DC Current Gain

I_C= -0.1mA, V_CE= -1.0 V

I_C= -50mA, V_CE= -1.0 V

I_C= -10mA, I_B= -1.0 mA

I_C= -50mA, I_B= -5.0 mA

I_C= -10mA, I_B= 1.0 mA

I_C= -50mA, I_B= 5.0 mA

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

-0.25

-0.4

-0.85

-0.95

-0.65

SMALL SIGNAL CHARACTERISTICS

f_T

Current Gain – Bandwidth Product

I_C= -10 mA, V_CE= -20 V,

f = 100 MHz

V_CB= 5.0 V, I_E= 0,

f = 1.0 MHz

V_BE= 0.5 V, I_C= 0,

f = 1.0 MHz

250

MHz

C_obo

C_ibo

Output Capacitance

4.5

10.0

Input Capacitance

SWITCHING CHARACTERISTICS

t_d

t_r

Delay Time

Rise Time

Storage Time

Fall Time

_CC= 3.0 V, V_BE(off)= 0.5 V,

225

I_C= 10mA, I_B1= 1.0 mA

V_CC= 3.0 V, I_C= 10mA,

I_B1= I_B2= 1.0 mA

t_s

t_f

*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%

MECHANICAL DIMENSIONS: in Inches / mm

.054 (1.370

.045 1.160)

.008(.20) R Typ

3 Places

.012(.30) R

.105 (2.68

.093 (2.37

.087 2.21)

.095 2.41)

.036 (.91

.024 .61)

.0125 Typ

(.318 )

.024 (.61

.016 .41)

.079 (2.01

.071 1.81)

.125 (3.18

.115 2.92)

LCC-3

DEVICE TYPE

NPN TRANSISTOR IN LCC-3P

CERAMIC PACKAGE

PIN 1

BASE

PIN 2

EMITTER

PIN 3

COLLECTOR

•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•

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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version

of the datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,

medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by

means of users’ fail-safe precautions or other arrangement.

3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during

operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual

property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from

use at a value exceeding the absolute maximum rating.

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of

Sensitron Semiconductor.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will

hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third

party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and

regulations.

• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •

• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •

SHD431006 [SENSITRON]

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