SHD724602 [SENSITRON]
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-258AA, TO-258, 3 PIN;
| 型号： | SHD724602 |
| 厂家： | 
SENSITRON |
| 描述： | Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-258AA, TO-258, 3 PIN 局域网 栅 晶体管 |
| 文件： | 总3页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SENSITRON
SEMICONDUCTOR
SHD724602
TECHNICAL DATA
DATA SHEET 4205, REV-
600 VOLT, 70 AMP IGBT DEVICE
VERY HIGH SPEED
WITH ULTRAFAST REVERSE RECOVERY DIODE
ELECTRICAL CHARACTERISTICS
(Tj=250C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 250 mA, VGE = 0V
BVCES
600
-
-
-
-
V
A
O
Continuous Collector Current
TC = 25 C IC
45 (1)
30
TC = 90
OC
Pulsed Collector Current, 1msec
ICM
-
-
-
-
-
-
150
+/-20
+/- 100
5.0
A
V
Gate to Emitter Voltage
VGE
Gate-Emitter Leakage Current, VGE = +/-20V
IGES
-
nA
V
Gate Threshold Voltage, IC= 250 mA
VGE(TH)
ICES
2.5
Zero Gate Voltage Collector Current
VCE = 600 V, VGE=0V T=25oC
-
-
-
-
i
0.2
3.0
mA
mA
VCE = 480 V, VGE=0V T=125oC
i
Collector to Emitter Saturation Voltage,
OC
TC = 25
VCE(SAT)
-
2.2
2.0
2.5
-
V
IC = 24A, VGE = 15V,
OC
TC = 125
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cies
Coes
Cres
-
1500
145
40
-
pF
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
-
-
-
13
17
130
80
-
-
-
nsec
Turn off Energy Loss
Eoff
Eon
(T = 125 OC, I = 24A, VGE = 15V, inductive load, VCC
400 V, RG = 5 W
=
-
mJ
mJ
0.38
0.22
j
C
-
-
-
Maximum Thermal Resistance
RqJC
-
-
-
0.85
150
oC/W
oC
Maximum and Storage Junction Temperature
T
jmax
-55
· 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 ·
· World Wide Web Site - http://www.sensitron.com · E-mail Address - sales@sensitron.com ·
SHD724602
SENSITRON
TECHNICAL DATA
DATA SHEET 4205, REV-
ULTRAFAST DIODE RATING AND CHARACTERISTICS
PARAMETER
SYMBOL
PIV
MIN
600
-
TYP
MAX
-
UNIT
Diode Peak Inverse Voltage
-
-
V
A
O
Continuous Forward Current, TC = 25 C
IF
45 (1)
30
O
TC = 90 C
Forward Surge Current, tp = 8.3 msec
IFSM
VF
-
-
-
-
1.7
-
300
1.8
1.7
A
V
O
Diode Forward Voltage,
125 OC
IF = 30A
TC = 25 C
TC =
Diode Reverse Recovery Time
trr
-
-
100
-
140
4
nsec
O
Diode Reverse Recovery Current
(IF=30A, VRR=100V, di/dt=100 A/ms)
TC = 100 C
IRM
A
Maximum Thermal Resistance
RqJC
-
-
-
1.0
oC/W
oC
Maximum and Storage Junction Temperature
T
jmax
-55
150
(1)
Current is limited by package leads to 45A; Die ratings are 70A.
C (3)
Schematic Diagram:
G (1)
E (2)
.270
(6.86
Package Drawing:
(TO258)
.165
.155 3.94)
(4.19
.695 (17.65
.685 17.40)
Dia.
.240 6.10)
.045 (1.14
.035 0.89)
.835 (21.21
.815 20.70)
.707 (17.96
.697 17.70)
.550 (13.97
.530 13.46)
1.302 (33.07
1.202 30.53)
G
E
C
.065 (1.65
.055 1.40)
3 Places
.200(5.08) BSC
2 Places
.140(3.56)BSC
1 2 3
· 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 ·
· World Wide Web Site - http://www.sensitron.com · E-mail Address - sales@sensitron.com ·
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
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operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
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use at a value exceeding the absolute maximum rating.
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• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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