SHDCG625051P [SENSITRON]

Rectifier Diode, 1 Phase, 2 Element, 20A, 600V V(RRM), Silicon Carbide, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254, 3 PIN;
SHDCG625051P
型号: SHDCG625051P
厂家: SENSITRON    SENSITRON
描述:

Rectifier Diode, 1 Phase, 2 Element, 20A, 600V V(RRM), Silicon Carbide, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254, 3 PIN

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文件: 总4页 (文件大小:60K)
下载:  下载PDF数据表文档文件

SHDCG626160

Rectifier Diode, 1 Phase, 1 Element, 20A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

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0 SENSITRON

SHDCG626160

Rectifier Diode, 1 Phase, 1 Element, 20A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

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0 SENSITRON

SHDCG626160D

Rectifier Diode, 1 Phase, 2 Element, 20A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

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0 SENSITRON

SHDCG626160D

Rectifier Diode, 1 Phase, 2 Element, 20A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

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0 SENSITRON

SHDCG626160N

Rectifier Diode, 1 Phase, 2 Element, 40A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

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0 SENSITRON

SHDCG626160N

Rectifier Diode, 1 Phase, 2 Element, 40A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

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0 SENSITRON

SHDCG626160P

Rectifier Diode, 1 Phase, 2 Element, 40A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

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0 SENSITRON

SHDCG626160P

Rectifier Diode, 1 Phase, 2 Element, 40A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

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0 SENSITRON

SHDG1002S

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN

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0 SENSITRON

SHDG1005

75A, 600V, N-CHANNEL IGBT, TO-258AA, TO-258, 3 PIN

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0 SENSITRON

SHDG1005S

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SENSITRON

SHDG1006

20A, 1000V, N-CHANNEL IGBT, TO-258AA, TO-258, 3 PIN

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0 SENSITRON

SHDG1006S

Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SENSITRON

SHDG1007

34A, 1000V, N-CHANNEL IGBT, TO-258AA, TO-258, 3 PIN

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0 SENSITRON

SHDG1007S

Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SENSITRON