SHSMG1012 [SENSITRON]
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, SHD-6, 3 PIN;
| 型号： | SHSMG1012 |
| 厂家： | 
SENSITRON |
| 描述： | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, SHD-6, 3 PIN 栅 晶体管 |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
HIGH SPEED IGBT DEVICES
VCES
CONTINUOU
CONTINUOU
S
COLLECTOR
CURRENT
IC @ TC=25oC
PULSED
COLLEC
T.
VCE(sat)@Ic
Ciss
typ
tfi
MAXIMU
M
RθJC
PART
NUMBER
S
typ
PACKAGE
STYLE
COLLECTOR
CURRENT
IC @ Tc=90oC
25oC
PD@
CURRE
NT
TC=25oC
TC=25oC
1 ms
oC/W
Volts
V
A
pF
ns
Amps
Amps
Watts
Amps
SHSMG1003
SHSMG1004
600
600
30
50
60
75
120
200
1.8
2.5
30
50
2500
4000
130
180
312
400
0.4
0.31
SHD-6
HIGH SPEED, IMPROVED SCSOA IGBT DEVICES
VCES
CONTINUOU
S
COLLECTOR
CURRENT
IC @ Tc=90oC
CONTINUOU
S
COLLECTOR
CURRENT
IC @ TC=25oC
PULSED
COLLEC
T.
VCE(sat)@Ic
Ciss
typ
tfi
MAXIMU
M
RθJC
PART
NUMBER
typ
PACKAGE
STYLE
25oC
PD@
CURRE
NT
TC=25oC
TC=25oC
1 ms
oC/W
Volts
V
A
pF
ns
Amps
Amps
Watts
Amps
SHSMG1009
SHSMG1010
600
50
35
75
70
200
140
2.5
4.0
50
35
4000
3900
200
500
400
400
0.31
0.31
1200
SHD-6
HERMETIC SURFACE MOUNT IGBT DEVICES
LOW VCE(sat) IGBT DEVICES
VCES
CONTINUOU
S
COLLECTOR
CURRENT
IC @ Tc=90oC
CONTINUOU
S
COLLECTOR
CURRENT
IC @ TC=25oC
PULSED
COLLEC
T.
VCE(sat)@Ic
Ciss
typ
tfi
MAXIMU
M
RθJC
PART
NUMBER
typ
PACKAG
E
25oC
PD@
CURRE
NT
TC=25oC
STYLE
TC=25oC
1 ms
oC/W
Volts
V
A
pF
ns
Amps
Amps
Watts
Amps
SHSMG1012
600
60
75
200
1.8
60
4000
500
400
0.31
SHD-6
SHD-6
SHSMG1015
1200
25
50
100
3.0
25
2750
1200
312
0.4
LOW VCE(sat), IMPROVED SCSOA IGBT DEVICES
VCES
CONTINUOU
S
COLLECTOR
CURRENT
IC @ Tc=90oC
CONTINUOU
S
COLLECTOR
CURRENT
IC @ TC=25oC
PULSED
COLLEC
T.
VCE(sat)@Ic
Ciss
typ
tfi
MAXIMUM
PD@
RθJC
PART
NUMBER
typ
PACKAG
E
25oC
TC=25oC
CURRE
NT
STYLE
TC=25oC
1 ms
oC/W
0.4
Volts
600
V
A
pF
ns
Watts
312
Amps
30
Amps
50
Amps
100
SHSMG1016
2.5
30
2760
400
SHSMG1017
1000
25
50
100
3.5
25
2850
1200
312
0.4
SHD-6
Notes:
1- Bold part numbers indicate preferred devices.
HERMETIC SURFACE MOUNT IGBTs WITH A FAST REVERSE RECOVERY DIODE
HYPER FAST IGBT DEVICES WITH A FAST REVERSE RECOVERY DIODE IGBT CHARACTERISTICS
VCES
CONTINUOU
S
COLLECTOR
CURRENT
IC @ Tc=90oC
CONTINUOU
S
COLLECTOR
CURRENT
IC @ TC=25oC
PULSED
COLLEC
T.
VCE(sat)@Ic
Ciss
typ
tfi
MAXIMU
M
RθJC
PART
NUMBER
typ
PACKAG
E
25oC
PD@
CURRE
NT
TC=25oC
STYLE
TC=25oC
1 ms
oC/W
Volts
V
A
pF
ns
Amps
Amps
Watts
Amps
SHSMG1018
300
30
60
120
1.6
30
24
2500
180
265
0.47
SHSMG1019
600
24
48
96
2.5
1500
100
162
0.77
SHD-6
REVERSE DIODE CHARACTERISTICS
CURRENT
RATING
FavM @ D=0.5, Tc
VF @ IF
TJ=25oC
IRM, typ
trr @ -di/dt
TJ=25oC
typ
THERMAL
RESISTANC
E
PART
TJ=25oC
NUMBER
I
VR=100V @ IF
RθJC
Amps
oC
Volts Amps
Amps Amps
ns
35
A/ms
100
oC/W
0.9
SHSMG1018
SHSMG1019
30
85
1.55
30
3.5
50
HIGH SPEED IGBT DEVICES WITH A FAST REVERSE RECOVERY DIODE IGBT CHARACTERISTICS
VCES
CONTINUOU
S
COLLECTOR
CURRENT
IC @ Tc=90oC
CONTINUOU
S
COLLECTOR
CURRENT
IC @ TC=25oC
PULSED
COLLEC
T.
VCE(sat)@Ic
Ciss
typ
tfi
MAXIMU
M
RθJC
PART
NUMBER
typ
PACKAG
E
25oC
PD@
CURRE
NT
TC=25oC
STYLE
TC=25oC
1 ms
oC/W
Volts
V
A
pF
ns
Amps
Amps
Watts
Amps
SHSMG1020
600
30
60
120
1.8
30
25
2500
130
312
0.4
SHSMG1021
1200
25
50
100
4.0
2750
800
312
0.4
SHD-6
REVERSE DIODE CHARACTERISTICS
CURRENT
VF @ IF
IRM
trr @ -di/dt
THERMAL
RESISTAN
CE
PART
NUMBER
RATING
IFavM @ D=0.5,
Tc
typ
TJ=25oC
TJ=25oC
typ
TJ=25oC
VR=100V @ IF
RθJC
Amps
oC
Volts Amps
Amps Amps
ns
A/ms
oC/W
SHSMG1020
SHSMG1021
30
30
85
85
1.55
2.6
30
30
3.5
5.0
50
50
35
50
100
100
0.9
0.9
HERMETIC SURFACE MOUNT IGBTs WITH A FAST REVERSE RECOVERY DIODE
HIGH SPEED IMPROVED SCSOA IGBT DEVICES WITH A FAST REVERSE RECOVERY DIODE
IGBT CHARACTERISTICS
VCES
CONTINUOU
S
COLLECTOR
CURRENT
IC @ Tc=90oC
CONTINUOU
S
COLLECTOR
CURRENT
IC @ TC=25oC
PULSED
COLLEC
T.
VCE(sat)@Ic
Ciss
typ
tfi
MAXIMU
M
RθJC
PART
NUMBER
typ
PACKAG
E
25oC
PD@
CURRE
NT
TC=25oC
STYLE
TC=25oC
1 ms
oC/W
Volts
V
A
pF
ns
Amps
30
Amps
50
Watts
312
Amps
100
SHSMG1022
SHSMG1023
600
3.0
4.0
30
25
2760
2850
200
800
0.4
0.4
1000
25
50
100
312
SHD-6
REVERSE DIODE CHARACTERISTICS
CURRENT
RATING
FavM @ D=0.5, Tc
VF @ IF
TJ=25oC
IRM, typ
trr @ -di/dt
TJ=25oC
typ
THERMAL
RESISTANC
E
PART
TJ=25oC
NUMBER
I
VR=100V @ IF
RθJC
Amps
oC
Volts Amps
Amps Amps
ns
A/ms
oC/W
0.9
SHSMG1022
SHSMG1023
30
30
85
85
1.55
2.6
30
30
3.5
5.0
50
50
35
35
100
100
0.9
LOW VCE(sat) IGBT DEVICES WITH A FAST REVERSE RECOVERY DIODE
IGBT CHARACTERISTICS
VCES
CONTINUOU
S
COLLECTOR
CURRENT
IC @ Tc=90oC
CONTINUOU
S
COLLECTOR
CURRENT
IC @ TC=25oC
PULSED
COLLEC
T.
VCE(sat)@Ic
Ciss
typ
tfi
MAXIMU
M
RθJC
PART
NUMBER
typ
PACKAG
E
25oC
PD@
CURRE
NT
TC=25oC
STYLE
TC=25oC
1 ms
oC/W
Volts
V
A
pF
ns
Amps
31
Amps
40
Watts
178
Amps
80
SHSMG1024
SHSMG1025
600
1.8
3.0
31
25
1500
2750
800
0.7
0.4
1200
25
50
100
1200
312
SHD-6
REVERSE DIODE CHARACTERISTICS
CURRENT
RATING
FavM @ D=0.5, Tc
VF @ IF
TJ=25oC
IRM, typ
trr @ -di/dt
TJ=25oC
typ
THERMAL
RESISTANC
E
PART
TJ=25oC
NUMBER
I
VR=100V @ IF
RθJC
Amps
oC
Volts Amps
Amps Amps
ns
A/ms
oC/W
0.9
SHSMG1024
SHSMG1025
30
30
85
85
1.55
2.6
30
30
3.5
5.0
50
50
35
50
100
100
0.9
HERMETIC SURFACE MOUNT IGBTs WITH A FAST REVERSE RECOVERY DIODE
LOW VCE(sat) IMPROVED SCSOA IGBT DEVICES WITH A FAST REVERSE RECOVERY DIODE
IGBT CHARACTERISTICS
VCES
CONTINUOU
S
COLLECTOR
CURRENT
IC @ Tc=90oC
CONTINUOU
S
COLLECTOR
CURRENT
IC @ TC=25oC
PULSED
COLLEC
T.
VCE(sat)@Ic
Ciss
typ
tfi
MAXIMU
M
RθJC
PART
NUMBER
typ
PACKAG
E
STYLE
25oC
PD@
CURREN
T
TC=25oC
TC=25oC
1 ms
oC/W
Volts
600
V
A
pF
ns
Amps
30
Amps
50
Watts
312
Amps
100
SHSMG1026
2.5
3.5
30
25
2760
2850
400
0.4
0.4
SHSMG1027 1000
25
50
100
1200
312
SHD6
REVERSE DIODE CHARACTERISTICS
CURRENT
RATING
FavM @ D=0.5, Tc
VF @ IF
TJ=25oC
IRM, typ
trr @ -di/dt
TJ=25oC
typ
THERMAL
RESISTANC
PART
TJ=25oC
NUMBER
I
VR=100V @ IF
E
RθJC
Amps
oC
Volts Amps
Amps Amps
ns
A/ms
oC/W
0.9
SHSMG1026
SHSMG1027
30
30
85
85
1.55
2.6
30
30
3.5
5.0
50
50
35
35
100
100
0.9
Notes:
1- Bold part numbers indicate preferred devices.
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