SPM6M080-010D [SENSITRON]
Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation; 三相MOSFET桥门极驱动器和光隔离
| 型号： | SPM6M080-010D |
| 厂家： | 
SENSITRON |
| 描述： | Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation |
| 文件： | 总14页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
Three-Phase MOSFET BRIDGE, With Gate Driver and Optical
Isolation
DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
PARAMETER
(Tj=250C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
MOSFET SPECIFICATIONS
Drain-to-Source Breakdown Voltage
BVDSS
100
-
-
-
-
V
A
ID = 500 µA, VGS = 0V
Continuous Drain Current
TC = 25 OC
TC = 90 OC
ID
80
70
Pulsed Drain Current, Pulse Width limited to 1 msec
IDM
-
-
-
-
200
A
Zero Gate Voltage Drain Current
ICSS
V
DS = 100 V, VGS=0V Ti=25oC
1
3
mA
mA
VDS= 80 V, VGS=0V Ti=125oC
Static Drain-to-Source On Resistance,
Tj = 25 OC
Tj = 150 OC
RDSon
-
0.009
0.018
0.012
-
Ω
ID= 60A, VGS = 15V,
Maximum Thermal Resistance
-
-
-
-
0.65
150
150
oC/W
RθJC
Tjmax
Tjmax
Maximum operating Junction Temperature
Maximum Storage Junction Temperature
-40
-55
oC
oC
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Page 1
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
PRODUCT PARAMETERS - (TC=25 oC unless otherwise noted)
Over-Temperature Shutdown
Over-Temperature Shutdown
Over-Temperature Output
Tsd
Tso
100
105
10
110
oC
10mV/oC
oC
Over-Temperature Shutdown Hysteresis
20
DIODES CHARACTERISTICS
Continuous Source Current, TC = 90 OC
IS
-
-
-
70
A
V
Diode Forward Voltage,
IS = 60A, Tj = 25 OC
VSD
1.15
Diode Reverse Recovery Time
(IS=50A, VDD=50V , di/dt=100 A/µs)
trr
-
70
15
-
nsec
Gate Driver
Supply Voltage
VCC
14
18
V
Supply Input Current at Vcc, Pin 19,
Without PWM Switching
, with 10KHz PWM at Two Inputs
35
50
mA
mA
Input On Current
HIN, LIN
2
5.0
Opto-Isolator Logic High Input Threshold
Input Reverse Breakdown Voltage
Input Forward Voltage @ Iin = 5mA
Ith
-
5.0
-
1.6
-
-
-
mA
V
BVin
VF
1.5
1.7
V
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Page 2
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
Under Voltage Lockout
VCCUV
Itrip-ref
V
V
9.0
10.0
1.63
11.5
1.68
ITRIP Reference Voltage (1)
1.57
tond
tr
toffd
tf
Input-to-Output Turn On Delay
Output Turn On Rise Time
700
50
-
-
-
-
-
-
-
-
Input-to-Output Turn Off Delay
Output Turn Off Fall Time
750
60
nsec
@ VCC=50V, ID=50A, TC = 25
Dead Time Requirement, for Shoot Through Prevention
600
-
750
nsec
V
Opto-Isolator Input-to-Output Isolation Voltage, momentary
Opto-Isolator Operating Input Common Mode Voltage
-
2500
-
1000
10
V
Opto-Isolator Operating Input Common Mode Transient
Immunity, with Iin > 5mA
KV/usec
Pin-To-Case Isolation Voltage, DC Voltage
-
-
1500
-
V
DC Bus Current Sensor
Shunt Resistor Value
-
5
-
mOhm
V/A
Current Amplifier Gain, Referenced to Signal Gnd
Current Amplifier DC Offset (Zero DC Bus Current)
Current Amplifier Response Time
0.049
0.010
3
0.030
V
usec
(1) ITRIP current limit is internally set to 35A peak. The set point can be lowered by connecting a resistor between Itrip-ref
and Gnd. The set point can be increased by connecting a resistor between Itrip-ref and +5V ref. The off time duration is
about 70 usec.
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Page 3
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
Figure 2 - Package Drawing Top & Side Views
(All dimensions are in inches, tolerance is +/- 0.010”)
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Page 4
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
Figure 3 - Package Pin Locations
(All dimensions are in inches; tolerance is +/- 0.005” unless otherwise specified)
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Page 5
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
PIN OUT
Pin #
Name
Description
1
HinA
Isolated Drive Input for High-side MOSFET of Phase A
2
3
HinA-Rtn
NC
Return for Input at 1
Not Connected
4
LinA
Isolated Drive Input for Low-side MOSFET of Phase A
Return for Input at 4
5
LinA-Rtn
NC
6
Not Connected
7
HinB
Isolated Drive Input for High-side MOSFET of Phase B
Return for Input at 7
8
HinB-Rtn
NC
9
Not Connected
10
11
12
13
LinB
Isolated Drive Input for Low-side MOSFET of Phase B
Return for Input at 10
LinB-Rtn
HinC
Isolated Drive Input for High-side MOSFET of Phase C
Return for Input at 12
HinC-Rtn
14
15
16
17
18
19
LinC
LinC-Rtn
NC
Isolated Drive Input for Low-side MOSFET of Phase C
Return for Input at 14
Not Connected
NC
Not Connected
NC
Not Connected
+15V input biasing supply connection for the controller.
Under-voltage lockout keeps all outputs off for Vcc
below 10.5V. Vcc pin should be connected to an
isolated 15V power supply. Vcc recommended limits are
14V to 16V , and shall not exceed 18V. The return of
Vcc is pin 20.
Vcc
Recommended power supply capability is about 70mA.
20
+15V Rtn (3)
Signal ground for all signals at Pins 19 through 27. This
ground is internally connected to the +VDC Rtn through
1.7 Ohms. It is preferred not to have external connection
between Signal Gnd and +VDC Rtn.
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Page 6
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
Pin #
Name
Description
SD (3)
It is an active low, dual function input/output pin. It is internally pulled
high to +5V by 2.74K Ω. As a low input it shuts down all MOSFETs
regardless of the Hin and Lin signals.
21
SD is internally activated by the over-temperature shutdown, over-
current limit, and desaturation protection
Desaturation shutdown is a latching feature. Over-temperature
shutdown, and over-current limit are not latching features.
SD can be used to shutdown all MOSFETs by an external command.
An open collector switch shall be used to pull down SD externally.
SD can be used as a fault condition output. Low output at SD indicates
a latching fault situation.
Flt (3)
It is a dual function input/output pin. It is an active low input, internally
pulled high to +5V by 2.74K Ω. If pulled down, it will freeze the status of
all the six MOSFETs regardless of the Hin and Lin signals.
As an output, Pin 13, reports desaturation protection activation. When
desaturation protection is activated a low output for about 9 µsec is
reported.
22
If any other protection feature is activated, it will not be reported by Pin
22.
Flt-Clr (3)
is a fault clear input. It can be used to reset a latching fault condition, due to
desaturation protection.
23
Pin 23 an active high input. It is internally pulled down by 2.0KΩ. A
latching fault due to desaturation can be cleared by pulling this input high to
+5V by 200-500Ω, or to +15V by 3-5KΩ, as shown in Fig. 6.
It is recommended to activate fault clear input for about 300 µsec at
startup.
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Page 7
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
Pin #
24
Name
Description
+5V Output
Itrip-Ref (3)
+5V output. Maximum output current is 30mA
Adjustable voltage divider reference for over-current shutdown. Internal
pull-up to +5V 31.6KΩ, pull down to ground is 10KΩ, and hysteresis
resistance of50KΩ. The internal set point is 1.64V, corresponding to
over-current shutdown of 34A. The re-start delay time is about 70 usec.
25
26
27
Idco
TCo
DC bus current sense amplifier output. The sensor gain is 0.049V/A. The
internal impedance of this output is 1KΩ, and internal filter capacitance is
1nF.
Analog output of case temperature sensor. The sensor output gain is 0.010
V/oC, with zero DC offset. This sensor can measure both positive and
negative oC. The internal impedance of this output is 8.87KΩ.
The internal block diagram of the temperature sensor is shown in Fig. 5.
28 &29
PhA
Phase A output
30 & 31
32 & 33
PhB
PhC
Phase B Output
Phase C Output
34 & 35
36 & 37
Case
+VDC Rtn
+VDC
DC Bus return
DC Bus input
Case
Isolated From All Terminals
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Page 8
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
Application Notes
a- Input Interface:
Recommended input turn-on current for all six drive signals is 5-8mA.
For higher noise immunity the tri-state differential buffer, DS34C87, is recommended as
shown in Fig. 4.
Note : Connect LinA to non-inverting output for a non-inverting input logic.
Connect LinA to inverting output for an inverting input logic.
300-400Ω
Opto-
Coupler
Input
One Channel
of DS34C87
LinA
2-5KΩ
LinA-R
Fig. 4. Input Signal Buffer
b-Temperature Sensor Output:
8.87KΩ
Pin 27
0.1uF
Fig. 5 Temperature Sensor Internal Block Diagram
For both negative and positive temperature measurement capability, Contact the Factory.
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Page 9
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
c- System Start Up Sequence:
Activate fault clear input for about 300 µsec at startup. The micro-controller enable output is inverted
and fed to the second DS34C87 control input. When the controller is in disable mode, the Flt-clr is
enabled and Phase C low-side MOSFET is turned on. This allows for the bootstrap circuit of the
high-side MOSFET of Phase C to be charged. At the same time, the high-side bootstrap circuits of
Phases A and B will charge through the motor winding. Once the controller is enabled, PWM signals
of all channels should start.
Fig. 6 shows a recommended startup circuit.
Notes:
1- Gnd1 and Gnd2 are isolated grounds from each other.
2- The +5V power supply used for DS34C87 is an isolated power supply.
3- The +15V power supply used for SPM6M080-010D is an isolated power supply.
DS34C87
350Ω
2.74k
HinA
OutA-P
OutA-N
OutB-P
HinA
InA
HinA-R
LinA
LinA-R
HinB
HinB-R
LinB
2.74k
350Ω
350Ω
LinA
HinB
InB
InC
InD
OutB-N
OutC-P
OutC-N
OutD-P
OutD-N
+5V
2.74k
2.74k
350Ω
LinB
LinB-R
A/B Cont
C/D Cont
Enable
HinC
HinC-R
LinC
+5V-in
Gnd2
Gnd
Micro
Controller
2.74k
DS34C87
350Ω
LinC-R
OutA-P
HinC
LinC
InA
InB
InC
OutA-N
OutB-P
OutB-N
OutC-P
OutC-N
OutD-P
OutD-N
+5V
350Ω
350Ω
SPM6G080-010D
350Ω
InD
15V
A/B Cont
C/D Cont
Flt-Clr
2.74KΩ
Gnd
Gnd1
2.74KΩ
SFH6186-4
Fig. 6 Input Interface and Startup Circuit
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Page 10
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
Truth Table For DS34C87
Input
Control Input
Non-Inverting Output
Inverting Output
H
H
H
L
H
L
L
H
Z
L
X
Z
d- DC Bus Charging from 15V
D1
Vcc
+15V
D2
R1
100KΩ
DSH
+VDC
R2
100KΩ
Q1H
Q1L
700
KΩ
VBS
PhA
•
D3
DSL
700
KΩ
Gate
Driver
+15V Rtn
Sgnl Gnd1
+VDC Rtn
Figure 7. Charging Path from 15V Supply to DC Bus when DC Bus is off
• Each MOSFET is protected against desaturation.
• D2 is the desaturation sense diode for the high-side MOSFET
• D3 is the desaturation sense diode for the low-side MOSFET
• When the DC bus voltage is not applied or below 15V, there is a charging path from the
15V supply to the DC bus through D2 and D3 and the corresponding pull up 100K Ohm
resistor. The charging current is 0.15mA per MOSFET. Total charging current is about
1.5mA.
• Do not apply PWM signal if the DC bus voltage is below 20V.
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Page 11
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
e- Active Bias For Desaturation Detection Circuit:
The desaturation detection is done by diode D2 for the high side MOSFET Q1H, and by
diode D3 for the low side MOSFET Q1L. The internal detection circuit, input DSH for the
high-side and input DSL for the low-side, is biased by the local supply voltage VCC for the
low side and VBS for the high side. When the MOSFET is on the corresponding detection
diode is on. The current flowing through the diode is determined by the internal pull
resistor, R1 for the high side and R2 for the low side. To minimize the current drain from
VCC and VBS, R1 and R2 are set to be 100KΩ. Lower value of R1 will overload the
bootstrap circuit and reduce the bootstrap capacitor holding time.
To increase the circuit noise immunity, an active bias circuit is used to lower R1 and R2
when the corresponding MOSFET is off by monitoring the input voltage at both DSH, DSL
inputs. If the inputs at DSH drops below 7V the active bias is disabled. The active bias
circuits result in reducing R1 or R2 to about 110 Ω when the corresponding input is above
8V, as shown in Fig. 8. This active circuit results in higher noise immunity.
R1
R1
100KΩ
R1
110Ω
VDSH
7V
8V
Figure 8. Active Bias for DSH and DSL Internal Inputs
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Page 12
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
f- Limitation With Trapezoidal Motor Drive
In trapezoidal motor drives, two phases are conducting while the third phase is off at any
time. In Fig. 9 shows the voltage waveform across one phase, during intervals t1 and t2,
the MOSFET is off while the active bias circuit is above 8V, and below 15V. This results in
activating the active pull up circuit and reducing the corresponding R1 or R2 down to about
110 Ω. A high current will flow from VCC or VBS through R2 or R1 and the motor winding
during intervals t1, and t2. This results in draining the bootstrap capacitor voltage quickly.
Contact the factory for adjustments to satisfy trapezoidal motor drive applications using
this module. The adjustment will disable the internal pull up circuit.
V
15
8
time
t1
t2
Figure 9. Active Bias for DSH and DSL Internal Inputs
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Page 13
SENSITRON
SPM6M080-010D
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
Cleaning Process:
Suggested precaution following cleaning procedure:
If the parts are to be cleaned in an aqueous based cleaning solution, it is recommended
that the parts be baked immediately after cleaning. This is to remove any moisture that
may have permeated into the device during the cleaning process. For aqueous based
solutions, the recommended process is to bake for at least 2 hours at 125oC.
Do not use solvents based cleaners.
Soldering Procedure:
Recommended soldering procedure
Signal pins 1 to 27: 210C for 10 seconds max
Power pins 28 to 37: 260C for 10 seconds max. Pre-warm module to 125C to aid in power
pins soldering.
Ordering Information:
SPM6M080-010D comes standard with a uni-directional current sense signal. For optional
bi-directional current sense signal, add –A to the part number as follows: SPM6M080-
010D-A.
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
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exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
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Page 14
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