UF3A-G [SENSITRON]

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN;


型号：	UF3A-G
厂家：	SENSITRON
描述：	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN 功效瞄准线光电二极管
文件：	总3页 (文件大小：148K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ꢀ

SENSITRON

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Green Products

ꢀ

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Green Products in Compliance with the RoHS Directive

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SMC/DO-214AB

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Dim Min

Max

Min Max

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5.59

6.60

2.75

6.22 0.220 0.245

7.11 0.260 0.280

3.25 0.108 0.128

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0.152 0.305 0.006 0.012

7.75

2.00

8.13 0.305 0.320

2.62 0.079 0.103

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0.051 0.203 0.002 0.008

0.76 1.27 0.030 0.05

In mm In inch

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SEMICONDUCTOR

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Green Products

ꢀ

3.0

UF3A-G-UF3D-G

UF3G-G

ꢀ

1.0

UF3J--UF3K-G

1.5

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0.1

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T_j- 25°C

Pulse Width = 300µs

0.01

100

125

( ° C)

Fig. 1 Forward Current Derating Curve

150

0.4

0.8

1.2

1.6

2.0

T_L, LEAD TEMPERATURE

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

100

1000

Single Half Sine-Wave

(JEDEC Method)

ꢀ

100

ꢀ

T_j= 100°C

ꢀ

1.0

ꢀ

T_j= 25°C

0.1

T_j= 150°C

0.01

100 120 140

100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Forward Surge Current Derating Curve

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 4 Typical Reverse Characteristics

t_rr

+0.5A

50Ω NI (Non-inductive)

10Ω NI

Device

Under

Test

(-)

(+)

(-)

Pulse

Generator

(Note 2)

50V DC

Approx

-0.25A

1.0Ω

(+)

Oscilloscope

(Note 1)

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

-1.0A

Set time base for 10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

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UF3A-G-UF3K-G

SENSITRON

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3.0A SURFACE MOUNT ULTRA FAST RECTIFIER

SEMICONDUCTOR

Data Sheet 4816, Rev. –

Green Products

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve

product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest

version of the datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,

medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by

means of users’ fail-safe precautions or other arrangement .

3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during

operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual

property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from

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5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.

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6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of

Sensitron Semiconductor.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will

hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third

party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and

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UF3A-G [SENSITRON]

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