SGM13005L4 [SGMICRO]
Low Noise Amplifier with Bypass Switch for LTE Low Band;
| 型号： | SGM13005L4 |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | Low Noise Amplifier with Bypass Switch for LTE Low Band LTE |
| 文件： | 总9页 (文件大小：621K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM13005L4
Low Noise Amplifier with
Bypass Switch for LTE Low Band
GENERAL DESCRIPTION
FEATURES
The SGM13005L4 is a low noise amplifier (LNA) with
bypass for LTE low band receiving application. The
device features high gain, low noise figure and high
linearity over a supply voltage range from 1.5V to 3.6V.
Low noise figure and high gain improve the sensitivity
of the SGM13005L4, and high linearity enables the
device to provide better immunity to interference
signals.
● Operating Frequency Range: 700MHz to 960MHz
● High Gain: 21.4dB at 850MHz
● Low Noise Figure: 0.75dB at 850MHz
● Low Operation Current: 10.5mA
● Bypass Mode Current: 1μA (MAX)
● Single Supply Voltage Range: 1.5V to 3.6V
● Input and Output DC Decoupled
● Integrated Matching for the Output
● Available in a Green UTDFN-1.1×0.7-6L Package
No external DC blocking capacitors are required on the
RF paths as long as no external DC voltage is applied,
which can save PCB area and cost.
BLOCK DIAGRAM
VDD
The SGM13005L4 is available in a Green UTDFN-
1.1×0.7-6L package.
Bias
EN
GND
APPLICATIONS
RFOUT
RFIN
Cell Phones
Tablets
Other RF Front-End Modules
Figure 1. SGM13005L4 Block Diagram
SG Micro Corp
DECEMBER 2022 – REV.A
www.sg-micro.com
Low Noise Amplifier with
SGM13005L4
Bypass Switch for LTE Low Band
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
SGM13005L4 UTDFN-1.1×0.7-6L
-40℃ to +85℃
SGM13005L4YUEC6G/TR
6L
Tape and Reel, 10000
MARKING INFORMATION
NOTE: Fixed character for 6L.
YY
Serial Number
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
OVERSTRESS CAUTION
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
Supply Voltage, VDD.......................................... -0.3V to 4.0V
EN to GND........................................................ -0.3V to 3.6V
RFIN, RFOUT to GND ...................................... -0.3V to 0.3V
Supply Maximum Current, IVDD .....................................30mA
RF Input Power, PIN ....................................................10dBm
Junction Temperature.................................................+150℃
Storage Temperature Range.......................-55℃ to +150℃
Lead Temperature (Soldering, 10s)............................+260℃
ESD Susceptibility
ESD SENSITIVITY CAUTION
This integrated circuit can be damaged if ESD protections are
not considered carefully. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failureto observe proper handlingand installation procedures
can cause damage. ESD damage can range from subtle
performance degradation tocomplete device failure. Precision
integrated circuits may be more susceptible to damage
because even small parametric changes could cause the
device not to meet the published specifications.
HBM.............................................................................2000V
CDM ............................................................................2000V
RECOMMENDED OPERATING CONDITIONS
Operating Frequency Range, f0 ..............700MHz to 960MHz
Operating Temperature Range......................-40℃ to +85℃
Supply Voltage, VDD............................................1.5V to 3.6V
Control Voltage High, VCTL_H.............................. 1.35V to VDD
Control Voltage Low, VCTL_L.................................0V to 0.45V
DISCLAIMER
SG Micro Corp reserves the right to make any change in
circuit design, or specifications without prior notice.
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
2
Low Noise Amplifier with
SGM13005L4
Bypass Switch for LTE Low Band
PIN CONFIGURATION
(TOP VIEW)
1
6
GND
EN
2
5
VDD
RFIN
3
4
RFOUT
GND
UTDFN-1.1×0.7-6L
PIN DESCRIPTION
PIN
1, 4
2
NAME
GND
FUNCTION
Ground.
VDD
Power Supply.
LNA Output.
3
RFOUT
RFIN
EN
5
LNA Input from Antenna.
6
Active High Enable Input for the Device. Pull high to enable, pull low into bypass mode.
SG Micro Corp
DECEMBER 2022
www.sg-micro.com
3
Low Noise Amplifier with
SGM13005L4
Bypass Switch for LTE Low Band
ELECTRICAL CHARACTERISTICS
(TA = +25℃, VDD = 1.5V to 3.6V, f0 = 700MHz to 960MHz, typical values are at VDD = 2.8V, input and output resistance = 50Ω, unless
otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC Characteristics
Supply Voltage
Supply Current
VDD
IVDD
1.5
2.8
10.5
1.8
0
3.6
14.0
VDD
V
EN = High
High
mA
VCTL_H
VCTL_L
1.35
Control Voltage
V
Low
0
0.45
RF Characteristics
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
18.2
19.5
17.8
20.4
21.4
19.4
-5.3
Power Gain
G
dB
dB
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
RLI
RLO
ISO
NF
-9.8
-7.1
-7.5
-18.7
-13.0
-32.1
-28.4
-29.2
0.95
0.75
0.96
-14.0
-14.4
-11.3
-2.5
dB
dB
dB
Input Power 1dB Compression Point
Input In-Band IP3
P1dB
dBm
dBm
f1 = 740MHz, f2 = 741MHz, P1 = P2 = -10dBm
IIP3_inb f1 = 850MHz, f2 = 851MHz, P1 = P2 = -10dBm
f1 = 960MHz, f2 = 961MHz, P1 = P2 = -10dBm
-2.9
-1.8
Turn-On Time
Turn-Off Time
Bypass Mode
Supply Current
tON
Time from EN on to 90% of the gain
Time from EN off to 10% of the gain
1.4
3.0
μs
μs
tOFF
0.06
1.00
IVDD
VEN < 0.45V
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
0.07
-5.7
-5.2
-5.1
-8.9
-7.5
-6.3
-6.3
-10.9
-14.5
1
μA
-6.4
-5.8
-5.5
Insertion Loss
IL
dB
Input Return Loss
Output Return Loss
RLI
dB
dB
RLO
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
4
Low Noise Amplifier with
SGM13005L4
Bypass Switch for LTE Low Band
ELECTRICAL CHARACTERISTICS (Continued)
(TA = +25℃, VDD = 1.5V to 3.6V, f0 = 700MHz to 960MHz, typical values are at VDD = 1.8V, input and output resistance = 50Ω, unless
otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC Characteristics
Supply Voltage
Supply Current
VDD
IVDD
1.5
1.8
10.5
1.8
0
3.6
14.0
VDD
V
EN = High
High
mA
VCTL_H
VCTL_L
1.35
0
Control Voltage
V
Low
0.45
RF Characteristics
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
18.1
19.3
17.4
20.4
21.0
18.8
-5.5
Power Gain
G
dB
dB
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
RLI
RLO
ISO
NF
-9.5
-6.9
-8.7
-20.9
-11.7
-30.9
-27.8
-28.9
0.97
0.71
0.99
-15.5
-16.4
-14.1
-3.4
dB
dB
dB
Input Power 1dB Compression Point
Input In-Band IP3
P1dB
dBm
dBm
f1 = 740MHz, f2 = 741MHz, P1 = P2 = -10dBm
IIP3_inb f1 = 850MHz, f2 = 851MHz, P1 = P2 = -10dBm
f1 = 960MHz, f2 = 961MHz, P1 = P2 = -10dBm
-3.6
-2.7
Turn-On Time
Turn-Off Time
Bypass Mode
Supply Current
tON
Time from EN on to 90% of the gain
Time from EN off to 10% of the gain
1.5
3.0
μs
μs
tOFF
0.08
1.00
IVDD
VEN < 0.45V
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
f0 = 740MHz
f0 = 850MHz
f0 = 960MHz
0.03
-5.8
-5.3
-5.2
-9.5
-8.0
-6.5
-6.5
-11.4
-10.8
1
μA
-6.6
-5.9
-5.6
Insertion Loss
IL
dB
Input Return Loss
Output Return Loss
RLI
dB
dB
RLO
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
5
Low Noise Amplifier with
SGM13005L4
Bypass Switch for LTE Low Band
TYPICAL APPLICATION CIRCUIT
L1
(Optional)
Supply Voltage
VDD
RFOUT
LNA Output
C1
(Optional)
SGM13005L4
Enable
EN
L2
RFIN
LNA Input
GND
Figure 2. SGM13005L4 Typical Application Circuit
Table 1. Inductor Selection Table
Part
Typical (nH)
Q (min)
Frequency (MHz)
MFR
Murata
Size
LQW15A
25
25
250
0402
Table 2. Capacitor Selection Table
Part
Typical (pF)
1000
Voltage (V)
50
MFR
Size
GRM155
Murata
0402
EVALUATION BOARD LAYOUT
Figure 3. SGM13005L4 Evaluation Board Layout
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
6
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
UTDFN-1.1×0.7-6L
D
N6
Φ
b
E
e1
N1
H
PIN 1#
e
H
TOP VIEW
BOTTOM VIEW
Φ
0.20
0.40
A
A1
0.40
A2
SIDE VIEW
RECOMMENDED LAND PATTERN (Unit: mm)
Dimensions In Millimeters
Symbol
MIN
MOD
0.450
MAX
0.500
0.050
A
A1
A2
D
0.400
0.000
0.020
0.152 REF
1.100
1.050
0.650
0.150
0.300
0.300
1.150
0.750
0.250
0.500
0.500
E
0.700
b
0.200
e
0.400
e1
H
0.400
0.100 REF
NOTE: This drawing is subject to change without notice.
SG Micro Corp
TX00199.000
www.sg-micro.com
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
UTDFN-1.1×0.7-6L
7″
9.5
0.80
1.20
0.55
4.0
2.0
2.0
8.0
Q1
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
7″ (Option)
7″
368
442
227
410
224
224
8
18
SG Micro Corp
www.sg-micro.com
TX20000.000
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