SGM8250-2 [SGMICRO]
High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifier;
| 型号： | SGM8250-2 |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifier |
| 文件： | 总17页 (文件大小：981K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM8250-1/SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
GENERAL DESCRIPTION
FEATURES
The single SGM8250-1 and dual SGM8250-2 are high
voltage, high precision CMOS operational amplifiers,
which can operate from 3V to 24V single supply or from
±1.5V to ±12V dual power supplies, while consuming
only 50μA quiescent current per amplifier. The
SGM8250-1/2 support rail-to-rail input and output
operation. The input common mode voltage range is
from (-VS) - 0.1V to (+VS) + 0.1V, and the output range is
from (-VS) + 0.037V to (+VS) - 0.065V.
Low Input Offset Voltage: 50μV (MAX)
Low Noise: 0.85μVP-P at 0.1Hz to 10Hz
Rail-to-Rail Input and Output
● Support Single or Dual Power Supplies:
3V to 24V or ±1.5V to ±12V
Quiescent Current: 50μA/Amplifier (TYP)
-40℃ to +125℃ Operating Temperature Range
Small Packaging:
SGM8250-1 Available in Green SOT-23-5, SC70-5
and SOIC-8 Packages
The SGM8250-1/2 have high impedance inputs and
zero-drift 50μV (MAX) offset voltage. These specifications
make SGM8250-1/2 appropriate for a wide range of
applications requiring high precision.
SGM8250-2 Available in Green TDFN-3×3-8L and
SOIC-8 Packages
The SGM8250-1 is available in Green SOT-23-5,
SC70-5 and SOIC-8 packages. The SGM8250-2 is
available in Green TDFN-3×3-8L and SOIC-8 packages.
They are specified over -40℃ to +125℃ temperature
range.
APPLICATIONS
Industrial Equipment
Battery-Powered Equipment
Sensor Signal Conditioning
SG Micro Corp
DECEMBER 2017 - REV. A
www.sg-micro.com
SGM8250-1
SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
SOT-23-5
SC70-5
SGM8250-1XN5G/TR
SGM8250-1XC5G/TR
GSCXX
GS3XX
Tape and Reel, 3000
Tape and Reel, 3000
-40℃ to +125℃
-40℃ to +125℃
SGM8250-1
SGM
82501XS8
XXXXX
SGM
82502DB
XXXXX
SGM
SOIC-8
TDFN-3×3-8L
SOIC-8
SGM8250-1XS8G/TR
SGM8250-2XTDB8G/TR
SGM8250-2XS8G/TR
Tape and Reel, 4000
Tape and Reel, 4000
Tape and Reel, 4000
-40℃ to +125℃
-40℃ to +125℃
-40℃ to +125℃
SGM8250-2
82502XS8
XXXXX
MARKING INFORMATION
NOTE: XX = Date Code. XXXXX = Date Code and Vendor Code.
SOT-23-5/SC70-5
SOIC-8/TDFN-3×3-8L
YYY X X
X X X X X
Date Code - Month
Date Code - Year
Serial Number
Vendor Code
Date Code - Week
Date Code - Year
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
ABSOLUTE MAXIMUM RATINGS
ESD SENSITIVITY CAUTION
Supply Voltage..............................................................26.4V
This integrated circuit can be damaged if ESD protections are
not considered carefully. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failureto observe proper handlingand installation procedures
can cause damage. ESD damage can range from subtle
performance degradation tocomplete device failure. Precision
integrated circuits may be more susceptible to damage
because even small parametric changes could cause the
device not to meet the published specifications.
Input Common Mode Voltage Range
.................................................... (-VS) - 0.3V to (+VS) + 0.3V
Junction Temperature.................................................+150℃
Storage Temperature Range........................-65℃ to +150℃
Lead Temperature (Soldering, 10s)............................+260℃
ESD Susceptibility
HBM.............................................................................8000V
MM.................................................................................250V
CDM ............................................................................1000V
DISCLAIMER
SG Micro Corp reserves the right to make any change in
RECOMMENDED OPERATING CONDITIONS
Specified Voltage Range ........................................3V to 24V
Operating Temperature Range ....................-40℃ to +125℃
circuit design, or specifications without prior notice.
OVERSTRESS CAUTION
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
SG Micro Corp
www.sg-micro.com
DECEMBER 2017
2
SGM8250-1
SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
PIN CONFIGURATIONS
SGM8250-1 (TOP VIEW)
SGM8250-1 (TOP VIEW)
OUT
-VS
1
2
5
+VS
-IN
+IN
-VS
1
2
5
4
+VS
_
+
-IN
3
OUT
+IN
3
4
SOT-23-5
SC70-5
SGM8250-1 (TOP VIEW)
SGM8250-2 (TOP VIEW)
NC
1
2
3
4
8
NC
OUTA
1
2
3
4
8
+VS
_
_
-IN
+IN
-VS
7
6
5
+VS
OUT
NC
-INA
+INA
-VS
7
6
5
OUTB
-INB
+INB
+
_
+
NC = NO CONNECT
SOIC-8
SOIC-8
SGM8250-2 (TOP VIEW)
OUTA
-INA
+INA
-VS
1
8
7
6
5
+VS
2
3
4
OUTB
-INB
+INB
-VS
TDFN-3×3-8L
SG Micro Corp
www.sg-micro.com
DECEMBER 2017
3
SGM8250-1
SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
ELECTRICAL CHARACTERISTICS
(At TA = +25℃, +VS = 5V, -VS = 0V, VCM = +VS/2, VOUT = +VS/2 and RL = 10kΩ to +VS/2, Full = -40℃ to +125℃, unless otherwise
noted.)
PARAMETER
SYMBOL
CONDITIONS
TEMP
MIN
TYP
MAX
UNITS
Input Characteristics
10
50
90
+25℃
Full
Input Offset Voltage
VOS
μV
Input Offset Voltage Drift
Input Bias Current
ΔVOS/ΔT
IB
Full
0.11
60
μV/℃
pA
+25℃
Full
Input Common Mode Voltage Range
VCM
(-VS) - 0.1
95
(+VS) + 0.1
V
112
131
+25℃
Full
Common Mode Rejection Ratio
CMRR
(-VS) - 0.1V < VCM < (+VS) + 0.1V
(-VS) + 0.1V < VOUT < (+VS) - 0.1V
dB
dB
92
108
+25℃
Full
Open-Loop Voltage Gain
AOL
105
Output Characteristics
14
8
25
30
16
20
+25℃
Full
VOH
Output Voltage Swing from Rail
mV
+25℃
Full
VOL
ISC
Output Short-Circuit Current
Power Supply
±17
mA
+25℃
Operating Voltage Range
VS
IQ
Full
+25℃
Full
3
24
60
80
V
45
Quiescent Current/Amplifier
IOUT = 0
μA
116
113
142
+25℃
Full
Power Supply Rejection Ratio
PSRR
VS = 3V to 24V
dB
Dynamic Performance
Gain-Bandwidth Product
Slew Rate
GBP
SR
G = +100, CL = 100pF
350
0.1
kHz
V/μs
ms
+25℃
+25℃
+25℃
G = +1, VOUT = 2VP-P, CL = 100pF
Turn-On Time
0.75
Noise
Input Voltage Noise
Input Voltage Noise Density
f = 0.1Hz to 10Hz
f = 1kHz
0.85
40
μVP-P
+25℃
+25℃
en
nV/√Hz
SG Micro Corp
www.sg-micro.com
DECEMBER 2017
4
SGM8250-1
SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
ELECTRICAL CHARACTERISTICS (continued)
(At TA = +25℃, +VS = 24V, -VS = 0V, VCM = +VS/2, VOUT = +VS/2 and RL = 10kΩ to +VS/2, Full = -40℃ to +125℃, unless
otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
TEMP
MIN
TYP
MAX
UNITS
Input Characteristics
10
50
90
+25℃
Full
Input Offset Voltage
VOS
μV
Input Offset Voltage Drift
Input Bias Current
ΔVOS/ΔT
IB
Full
0.11
80
μV/℃
pA
850
+25℃
Full
Input Common Mode Voltage Range
VCM
(-VS) - 0.1
112
(+VS) + 0.1
V
130
145
+25℃
Full
Common Mode Rejection Ratio
CMRR
(-VS) - 0.1V < VCM < (+VS) + 0.1V
(-VS) + 0.1V < VOUT < (+VS) - 0.1V
dB
dB
107
120
+25℃
Full
Open-Loop Voltage Gain
AOL
110
Output Characteristics
65
37
95
130
60
+25℃
Full
VOH
Output Voltage Swing from Rail
mV
+25℃
Full
VOL
ISC
85
Output Short-Circuit Current
Power Supply
±17
mA
+25℃
Operating Voltage Range
VS
IQ
Full
+25℃
Full
3
24
64
84
V
50
Quiescent Current/Amplifier
IOUT = 0
μA
116
113
142
+25℃
Full
Power Supply Rejection Ratio
PSRR
VS = 3V to 24V
dB
Dynamic Performance
Gain-Bandwidth Product
Slew Rate
GBP
SR
G = +100, CL = 100pF
350
0.09
1.5
kHz
V/μs
ms
+25℃
+25℃
+25℃
G = +1, VOUT = 2VP-P, CL = 100pF
Turn-On Time
Noise
Input Voltage Noise
Input Voltage Noise Density
f = 0.1Hz to 10Hz
f = 1kHz
0.85
40
μVP-P
+25℃
+25℃
en
nV/√Hz
SG Micro Corp
www.sg-micro.com
DECEMBER 2017
5
SGM8250-1
SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃, +VS = 5V, -VS = 0V, RL = 10kΩ and CL = 0pF, unless otherwise noted.
Quiescent Current vs. Temperature
Small-Signal Overshoot vs. Load Capacitance
70
60
50
40
30
20
50
40
30
20
10
0
-50
-25
0
25
50
75
100 125
10
100
1000
Load Capacitance (pF)
Temperature (℃)
Common Mode Rejection Ratio vs. Frequency
Power Supply Rejection Ratio vs. Frequency
120
100
80
60
40
20
0
150
120
90
60
30
0
0.01
0.1
1
10
100
1000 10000
0.01
0.1
1
10
100
1000 10000
Frequency (kHz)
Frequency (kHz)
Settling Time vs. Closed-Loop Gain
Open-Loop Gain and Phase vs. Frequency
Open-Loop Gain
120
90
0
100
80
60
40
20
0
60
30
-30
-60
-90
-120
-150
-180
0
Phase
-30
-60
-90
0.1
1
10
100
1000
1
10
100
Frequency (kHz)
Closed-Loop Gain (dB)
SG Micro Corp
www.sg-micro.com
DECEMBER 2017
6
SGM8250-1
SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TA = +25℃, +VS = 5V, -VS = 0V, RL = 10kΩ and CL = 0pF, unless otherwise noted.
Large-Signal Step Response
G = +1, CL = 100pF
Small-Signal Step Response
G = +1, CL = 100pF
Time (100μs/div)
Time (100μs/div)
Positive Overload Recovery
Negative Overload Recovery
G = -10, f = 1kHz
G = -10, f = 1kHz
VIN
0V
0V
0V
VIN
VOUT
VOUT
0V
Time (50μs/div)
Time (50μs/div)
Turn-On Time
0.1Hz to 10Hz Noise
G = +1, VIN+ = 0.1V
VS
0V
VOUT
0V
Time (1s/div)
Time (200μs/div)
SG Micro Corp
www.sg-micro.com
DECEMBER 2017
7
SGM8250-1
SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TA = +25℃, +VS = 5V, -VS = 0V, RL = 10kΩ and CL = 0pF, unless otherwise noted.
Input Voltage Noise Density vs. Frequency
Offset Voltage Production Distribution
1000
100
10
15
12
9
19300 Samples
1 Production Lot
Continues with no 1/f (flicker) noise.
6
3
1
0
10
100
1000
10000
Frequency (Hz)
Offset Voltage (μV)
SG Micro Corp
www.sg-micro.com
DECEMBER 2017
8
SGM8250-1
SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
APPLICATION INFORMATION
Rail-to-Rail Input
Driving Capacitive Loads
When SGM8250-1/2 work at the power supply between
3V and 24V, the input common mode voltage range is
from (-VS) - 0.1V to (+VS) + 0.1V. In Figure 1, the ESD
diodes between the inputs and the power supply rails
will clamp the input voltage not to exceed the rails.
The SGM8250-1/2 are unity-gain stable with heavy
capacitive load. If greater capacitive load must be
driven in application, the circuit in Figure 3 can be used.
In this circuit, the IR drop voltage generated by RISO is
compensated by feedback loop.
+VS
RF
CF
VP
+
_
_
RISO
VN
VOUT
CL
VIN
+
-VS
Figure 1. Input Equivalent Circuit
Figure 3. Circuit to Drive Heavy Capacitive Load
Input Current-Limit Protection
Power Supply Decoupling and Layout
For ESD diode clamping protection, when the current
flowing through ESD diode exceeds the maximum
rating value, the ESD diode and amplifier will be
damaged, so current-limit protection will be added in
some applications. One resistor is selected to limit the
current not to exceed the maximum rating value. In
Figure 2, a series input resistor is used to limit the input
current to less than 10mA, but the drawback of this
current-limit resistor is that it contributes thermal noise
at the amplifier input. If this resistor must be added, its
value must be selected as small as possible.
A clean and low noise power supply is very important in
amplifier circuit design, besides of input signal noise,
the power supply is one of important source of noise to
the amplifiers through +VS and -VS pins. Power supply
bypassing is an effective method to clear up the noise
at power supply, and the low impedance path to ground
of decoupling capacitor will bypass the noise to GND.
In application, 10μF ceramic capacitor paralleled with
0.1μF or 0.01μF ceramic capacitor is used in Figure 4.
The ceramic capacitors should be placed as close as
possible to +VS and -VS power supply pins.
+VS
+VS
+VS
10μF
10μF
_
IOVERLOAD
10mA MAX
VOUT
0.1μF
0.1μF
VIN
+
_
_
VN
VP
VN
VP
VOUT
VOUT
+
+
Figure 2. Input Current-Limit Protection
10μF
-VS (GND)
Rail-to-Rail Output
The SGM8250-1/2 support rail-to-rail output operation.
In single power supply application, for example, when
+VS = 24V, -VS = GND, 10kΩ load resistor is tied from
OUT pin to +VS/2, the typical output swing range is from
0.037V to 23.935V.
0.1μF
-VS
Figure 4. Amplifier Power Supply Bypassing
SG Micro Corp
www.sg-micro.com
DECEMBER 2017
9
SGM8250-1
SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
APPLICATION INFORMATION (continued)
the input are used to increase the input impedance and
eliminate drawback of low input impedance in Figure 5.
Grounding
In low speed application, one node grounding technique
is the simplest and most effective method to eliminate
the noise generated by grounding. In high speed
application, the general method to eliminate noise is to
use a complete ground plane technique, and the whole
ground plane will help distribute heat and reduce EMI
noise pickup.
_
R1
R2
VN
+
_
VOUT
+
VP
+
Reduce Input-to-Output Coupling
R3
To reduce the input-to-output coupling, the input traces
must be placed as far away from the power supply or
output traces as possible. The sensitive trace must not
be placed in parallel with the noisy trace in same layer.
They must be placed perpendicularly in different layers
to reduce the crosstalk. These PCB layout techniques
will help to reduce unwanted positive feedback and
noise.
_
R4
VREF
Figure 6. High Input Impedance Difference Amplifier
Active Low-Pass Filter
The circuit in Figure 7 is a design example of active
low-pass filter, the DC gain is equal to -R2/R1 and the
-3dB corner frequency is equal to 1/2πR2C. In this design,
the filter bandwidth must be less than the bandwidth of
the amplifier, the resistor values must be selected as
low as possible to reduce ringing or oscillation generated
by the parasitic parameters in PCB layout.
Typical Application Circuits
Difference Amplifier
The circuit in Figure 5 is a design example of classical
difference amplifier. If R4/R3 = R2/R1, then VOUT = (VP -
VN) × R2/R1 + VREF
.
C
R2
R2
R1
_
VN
R1
_
VOUT
VIN
R3
VP
VOUT
+
+
R4
R3 = R1 // R2
VREF
Figure 5. Difference Amplifier
Figure 7. Active Low-Pass Filter
High Input Impedance Difference Amplifier
The circuit in Figure 6 is a design example of high input
impedance difference amplifier, the added amplifiers at
SG Micro Corp
www.sg-micro.com
DECEMBER 2017
10
SGM8250-1
SGM8250-2
High Voltage, Micro-Power, Zero-Drift,
CMOS Operational Amplifiers
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (DECEMBER 2017) to REV.A
Page
Changed from product preview to production data.............................................................................................................................................All
SG Micro Corp
www.sg-micro.com
DECEMBER 2017
11
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
SOT-23-5
1.90
D
e1
2.59
E1
E
0.99
b
e
0.95
0.69
RECOMMENDED LAND PATTERN (Unit: mm)
L
A
A1
c
θ
0.2
A2
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
MIN
MAX
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
c
D
E
E1
e
0.950 BSC
1.900 BSC
0.037 BSC
0.075 BSC
e1
L
0.300
0°
0.600
8°
0.012
0°
0.024
8°
θ
SG Micro Corp
www.sg-micro.com
TX00033.000
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
SC70-5
D
e1
0.65
e
1.9
E1
E
0.75
b
0.4
1.3
RECOMMENDED LAND PATTERN (Unit: mm)
L
L1
A
A1
A2
c
θ
0.20
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.450
MIN
MAX
A
A1
A2
b
0.900
0.000
0.900
0.150
0.080
2.000
1.150
2.150
0.035
0.000
0.035
0.006
0.003
0.079
0.045
0.085
0.043
0.004
0.039
0.014
0.006
0.087
0.053
0.096
c
D
E
E1
e
0.65 TYP
1.300 BSC
0.525 REF
0.026 TYP
0.051 BSC
0.021 REF
e1
L
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
SG Micro Corp
www.sg-micro.com
TX00043.000
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
TDFN-3×3-8L
D
e
N8
D1
k
E
E1
N4
N1
L
b
BOTTOM VIEW
TOP VIEW
2.3
1.5 2.725
A
A1
A2
0.675
SIDE VIEW
0.65
0.24
RECOMMENDED LAND PATTERN (Unit: mm)
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
0.800
0.050
MIN
0.028
0.000
MAX
0.031
0.002
A
A1
A2
D
0.700
0.000
0.203 REF
0.008 REF
2.900
2.200
2.900
1.400
3.100
2.400
3.100
1.600
0.114
0.087
0.114
0.055
0.122
0.094
0.122
0.063
D1
E
E1
k
0.200 MIN
0.650 TYP
0.008 MIN
0.026 TYP
b
0.180
0.375
0.300
0.575
0.007
0.015
0.012
0.023
e
L
SG Micro Corp
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TX00058.000
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
SOIC-8
0.6
D
e
2.2
E1
E
5.2
b
1.27
RECOMMENDED LAND PATTERN (Unit: mm)
L
A
A1
c
θ
A2
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
MIN
MAX
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
c
D
E
E1
e
1.27 BSC
0.050 BSC
L
0.400
0°
1.270
8°
0.016
0°
0.050
8°
θ
SG Micro Corp
www.sg-micro.com
TX00010.000
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
SOT-23-5
SC70-5
7″
7″
9.5
9.5
3.20
2.25
3.35
6.40
3.20
2.55
3.35
5.40
1.40
1.20
1.13
2.10
4.0
4.0
4.0
4.0
4.0
4.0
8.0
8.0
2.0
2.0
2.0
2.0
8.0
8.0
Q3
Q3
Q1
Q1
TDFN-3×3-8L
SOIC-8
13″
13″
12.4
12.4
12.0
12.0
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
7″ (Option)
368
442
386
227
410
280
224
224
370
8
18
5
7″
13″
SG Micro Corp
www.sg-micro.com
TX20000.000
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