SGM8295-1 [SGMICRO]
9MHz, Low Noise, High Voltage, Precision Operational Amplifier;
| 型号： | SGM8295-1 |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | 9MHz, Low Noise, High Voltage, Precision Operational Amplifier |
| 文件： | 总16页 (文件大小：875K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM8295-1/SGM8295-2/SGM8295-4
9MHz, Low Noise, High Voltage,
Precision Operational Amplifiers
GENERAL DESCRIPTION
FEATURES
The SGM8295-1/2/4 are a family of single, dual and
quad operational amplifiers, which are optimized for
high voltage, low noise and low offset voltage operation.
These devices can operate from 3.6V to 36V single
supply or from ±1.8V to ±18V dual supplies, while
consuming only 1.5mA quiescent current per amplifier.
● Low Noise: 4.5nV/ Hz
√
● Input Offset Voltage: 250μV (MAX)
● Low Bias Current: ±1nA (TYP)
● High Open-Loop Gain: 130dB at VS = ±15V
● High PSRR: 145dB
● High Gain-Bandwidth Product: 9MHz
● High Slew Rate: 8V/μs
They exhibit a high gain-bandwidth product of 9MHz
and a slew rate of 8V/μs. The output swing is rail-to-rail
with heavy loads. These specifications make the
operational amplifiers appropriate for various applications.
● Settling Time to 0.1% with 1V Step: 1μs
● Overload Recovery Time: 10μs
● Rail-to-Rail Output
● Support Single or Dual Power Supplies:
3.6V to 36V or ±1.8V to ±18V
The SGM8295-1 is available in Green SOT-23-5 and
SOIC-8 packages. The SGM8295-2 is available in Green
SOIC-8 and MSOP-8 packages. The SGM8295-4 is
available in a Green SOIC-14 package. They are specified
over the extended -40℃ to +125℃ temperature range.
● Input Common Mode Voltage Range:
(-VS) + 1.5V to (+VS) - 2V
● Low Supply Current: 1.5mA/Amplifier (TYP)
● -40℃ to +125℃ Operating Temperature Range
● Small Packaging:
SGM8295-1 Available in Green SOT-23-5 and
SOIC-8 Packages
SGM8295-2 Available in Green SOIC-8 and
MSOP-8 Packages
SGM8295-4 Available in a Green SOIC-14 Package
APPLICATIONS
Sensors
Audio
Active Filters
A/D Converters
Communications
Test Equipment
Cellular and Cordless Phones
Laptops and PDAs
Photodiode Amplification
SG Micro Corp
MARCH 2023 – REV. A. 2
www.sg-micro.com
SGM8295-1/SGM8295-2
SGM8295-4
9MHz, Low Noise, High Voltage,
Precision Operational Amplifiers
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
SOT-23-5
SOIC-8
SGM8295-1XN5G/TR
G62XX
Tape and Reel, 3000
Tape and Reel, 2500
-40℃ to +125℃
-40℃ to +125℃
SGM8295-1
SGM
82951XS8
XXXXX
SGM
82952XS8
XXXXX
SGM82952
XMS8
XXXXX
SGM8295-1XS8G/TR
SGM8295-2XS8G/TR
SOIC-8
Tape and Reel, 2500
-40℃ to +125℃
SGM8295-2
SGM8295-4
MSOP-8
SOIC-14
SGM8295-2XMS8G/TR
SGM8295-4XS14G/TR
Tape and Reel, 4000
Tape and Reel, 2500
-40℃ to +125℃
-40℃ to +125℃
SGM82954XS14
XXXXX
MARKING INFORMATION
NOTE: XX = Date Code. XXXXX = Date Code and Vendor Code.
SOT-23-5
SOIC-8/MSOP-8/SOIC-14
YYY X X
X X X X X
Date Code - Month
Date Code - Year
Serial Number
Vendor Code
Date Code - Week
Date Code - Year
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
ABSOLUTE MAXIMUM RATINGS
ESD SENSITIVITY CAUTION
Supply Voltage, +VS to -VS ..............................................40V
This integrated circuit can be damaged if ESD protections are
not considered carefully. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failureto observe proper handlingand installation procedures
can cause damage. ESD damage can range from subtle
performance degradation tocomplete device failure. Precision
integrated circuits may be more susceptible to damage
because even small parametric changes could cause the
device not to meet the published specifications.
Input Common Mode Voltage Range
.................................................... (-VS) - 0.3V to (+VS) + 0.3V
Junction Temperature.................................................+150℃
Storage Temperature Range.......................-65℃ to +150℃
Lead Temperature (Soldering, 10s)............................+260℃
ESD Susceptibility
HBM.............................................................................4000V
MM.................................................................................200V
CDM ............................................................................1000V
DISCLAIMER
SG Micro Corp reserves the right to make any change in
RECOMMENDED OPERATING CONDITIONS
Supply Voltage Range.........................................3.6V to 36V
Operating Temperature Range.....................-40℃ to +125℃
circuit design, or specifications without prior notice.
OVERSTRESS CAUTION
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
SG Micro Corp
www.sg-micro.com
MARCH 2023
2
SGM8295-1/SGM8295-2
SGM8295-4
9MHz, Low Noise, High Voltage,
Precision Operational Amplifiers
PIN CONFIGURATIONS
SGM8295-1 (TOP VIEW)
SGM8295-1 (TOP VIEW)
NC
-IN
1
2
3
4
8
7
6
5
NC
OUT
-VS
1
2
5
+VS
-IN
_
+VS
OUT
NC
_
+
+IN
-VS
+
+IN
3
4
SOT-23-5
NC = NO CONNECT
SOIC-8
SGM8295-4 (TOP VIEW)
SGM8295-2 (TOP VIEW)
OUTA
-INA
1
14
OUTD
OUTA
-INA
+INA
-VS
1
8
7
6
5
+VS
_
_
2
3
4
5
6
7
13
12
11
10
9
-IND
+IND
-VS
_
2
3
4
OUTB
-INB
+INB
+
+
+INA
+VS
_
+
+
+INB
-INB
+INC
-INC
OUTC
+
+
SOIC-8/MSOP-8
_
_
OUTB
8
SOIC-14
SG Micro Corp
www.sg-micro.com
MARCH 2023
3
SGM8295-1/SGM8295-2
SGM8295-4
9MHz, Low Noise, High Voltage,
Precision Operational Amplifiers
ELECTRICAL CHARACTERISTICS
(VS = ±5V to VS = ±15V, VCM = 0V, VOUT = 0V and RL connected to 0V, Full = -40℃ to +125℃, typical values are at TA = +25℃,
unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
TEMP
MIN
TYP
50
MAX
UNITS
Input Characteristics
250
360
+25℃
Full
Input Offset Voltage
Input Bias Current
VOS
μV
+25℃
Full
±1
±17
IB
VCM = VS/2
VCM = VS/2
nA
±52
+25℃
Full
±1
±21
Input Offset Current
IOS
nA
V
±45
Input Common Mode Voltage Range
Common Mode Rejection Ratio
VCM
Full
(-VS) + 1.5
112
(+VS) - 2
140
135
140
130
130
0.4
+25℃
Full
CMRR (-VS) + 1.5V ≤ VCM ≤ (+VS) - 2V
VS = ±5V, VOUT = ±2.5V, RL = 10kΩ
dB
110
118
+25℃
Full
116
124
+25℃
Full
VS = ±15V, VOUT = ±10V, RL = 10kΩ
AOL
122
Open-Loop Voltage Gain
dB
108
+25℃
Full
VS = ±5V, VOUT = ±2.5V, RL = 2kΩ
106
118
+25℃
Full
VS = ±15V, VOUT = ±10V, RL = 2kΩ
110
Input Offset Voltage Drift
ΔVOS/ΔT
Full
μV/℃
Output Characteristics
65
95
+25℃
Full
VS = ±15V, RL = 10kΩ
VOUT
125
450
600
Output Voltage Swing from Rail
mV
mA
310
±50
+25℃
Full
VS = ±15V, RL = 2kΩ
Output Short-Circuit Current
Power Supply
ISC
VS
+25℃
±28
Operating Voltage Range
Full
+25℃
Full
3.6
36
2
V
1.5
Quiescent Current/Amplifier
Power Supply Rejection Ratio
IQ
IOUT = 0mA
mA
2.2
121
119
145
+25℃
Full
PSRR VS = 3V to 38V
dB
Dynamic Performance
Gain-Bandwidth Product
Slew Rate
GBP
SR
tS
9
8
MHz
V/μs
μs
VOUT = 100mVP-P, RL = 2kΩ
RL = 2kΩ
+25℃
+25℃
+25℃
+25℃
+25℃
+25℃
Settling Time to 0.1%
Overload Recovery Time
Phase Margin
VIN = 1V Step, RL = 2kΩ, G = +1
RL = 2kΩ, VIN × G = VS
1
10
μs
φO
45
°
VOUT = 100mVP-P, RL = 2kΩ, CL = 10pF
Total Harmonic Distortion + Noise
Noise
THD+N VIN = 1VRMS, G = +1, RL = 2kΩ, f = 1kHz
0.0001
%
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
f = 0.1Hz to 10Hz
280
4.5
2
nVP-P
+25℃
+25℃
+25℃
nV/
en
in
f = 1kHz
f = 1kHz
Hz
pA/
Hz
SG Micro Corp
www.sg-micro.com
MARCH 2023
4
SGM8295-1/SGM8295-2
SGM8295-4
9MHz, Low Noise, High Voltage,
Precision Operational Amplifiers
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃ and VS = ±15V, unless otherwise noted.
Quiescent Current vs. Supply Voltage
Output Current vs. Supply Voltage
1.5
1.48
1.46
1.44
1.42
1.4
60
40
20
0
ISOURCE
-20
-40
-60
ISINK
0
6
12
18
24
30
36
0
6
12
18
24
30
36
Supply Voltage (V)
Supply Voltage (V)
Input Offset Voltage vs. Input Common Mode Voltage
70
Output Voltage vs. Output Current
20
15
10
5
60
50
40
30
20
0
-5
-10
-15
-20
0
5
10
15
20
25
30
0
10
20
30
40
50
60
Input Common Mode Voltage (V)
Output Current (mA)
Quiescent Current vs. Temperature
Output Current vs. Temperature
1.6
1.55
1.5
90
60
30
0
ISOURCE
1.45
1.4
ISINK
-30
-60
-90
1.35
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75
100 125
Temperature (℃)
Temperature (℃)
SG Micro Corp
www.sg-micro.com
MARCH 2023
5
SGM8295-1/SGM8295-2
SGM8295-4
9MHz, Low Noise, High Voltage,
Precision Operational Amplifiers
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TA = +25℃ and VS = ±15V, unless otherwise noted.
Input Offset Voltage vs. Temperature
Input Bias Current vs. Temperature
0
-20
8
4
-40
0
-60
-4
-8
-12
-80
-100
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75
100 125
Temperature (℃)
Temperature (℃)
Large-Signal Step Response
RL = 2kΩ
Small-Signal Step Response
RL = 2kΩ
Time (100ns/div)
Time (100ns/div)
CMRR vs. Frequency
PSRR vs. Frequency
-40
-60
0
-20
— +PSRR
— -PSRR
-40
-80
-60
-80
-100
-120
-140
-100
-120
-140
0.01 0.1
1
10
100 1000 10000100000
0.01 0.1
1
10
100 1000 10000100000
Frequency (kHz)
Frequency (kHz)
SG Micro Corp
www.sg-micro.com
MARCH 2023
6
SGM8295-1/SGM8295-2
SGM8295-4
9MHz, Low Noise, High Voltage,
Precision Operational Amplifiers
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TA = +25℃ and VS = ±15V, unless otherwise noted.
Maximum Output Voltage vs. Frequency
Closed-Loop Output Impedance vs. Frequency
35
30
25
20
15
10
5
0.5
0.4
0.3
0.2
0.1
0
0
0.01
0.1
1
10
100
0.0001 0.001 0.01
0.1
1
10
100
Frequency (kHz)
Frequency (MHz)
Small-Signal Overshoot vs. Capacitive Load
Open-Loop Gain and Phase vs. Frequency
Open-Loop Gain
50
40
30
20
10
0
90
60
30
0
0
G = +1, RL = 2kΩ
-30
-60
-90
-120
-150
-180
Phase
-30
-60
-90
10
100
1000
1
10
100
1000
10000 100000
Capacitive Load (pF)
Frequency (kHz)
THD+N vs. Frequency
THD+N vs. Output Amplitude
0.01
0.001
0.05
0.04
0.03
0.02
0.01
0
VOUT = 1VP-P
0.0001
0.00001
10
100
1000
10000
100000
0.001
0.01
0.1
1
10
100
Output Amplitude (VP-P
)
Frequency (Hz)
SG Micro Corp
www.sg-micro.com
MARCH 2023
7
SGM8295-1/SGM8295-2
SGM8295-4
9MHz, Low Noise, High Voltage,
Precision Operational Amplifiers
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TA = +25℃ and VS = ±15V, unless otherwise noted.
Input Voltage Noise Density vs. Frequency
0.1Hz to 10Hz Input Voltage Noise
10
1
10
100
1000
10000
Time (1s/div)
Frequency (Hz)
Offset Voltage Production Distribution
Offset Voltage Drift Distribution
30
25
20
15
10
5
30
25
20
15
10
5
3600 Samples
1 Production Lot
-40℃ ≤ TA ≤ +125℃
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
Offset Voltage (μV)
Offset Voltage Drift (μV/℃)
Quiescent Current Production Distribution
40
35
30
25
20
15
10
5
3590 Samples
1 Production Lot
0
Quiescent Current (mA)
SG Micro Corp
www.sg-micro.com
MARCH 2023
8
SGM8295-1/SGM8295-2
SGM8295-4
9MHz, Low Noise, High Voltage,
Precision Operational Amplifiers
APPLICATION INFORMATION
Power Supply Decoupling and Layout
Typical Application Circuits
A clean and low noise power supply is very important in
amplifier circuit design, besides of input signal noise,
the power supply is one of important source of noise to
the amplifiers through +VS and -VS pins. Power supply
bypassing is an effective method to clear up the noise
at power supply, and the low impedance path to ground
of decoupling capacitor will bypass the noise to GND.
In application, 10μF ceramic capacitor paralleled with
0.1μF or 0.01μF ceramic capacitor is used in Figure 1.
The ceramic capacitors should be placed as close as
possible to +VS and -VS power supply pins.
Difference Amplifier
The circuit in Figure 2 is a design example of classical
difference amplifier. If R4/R3 = R2/R1, then VOUT = (VP -
VN) × R2/R1 + VREF
.
R2
R1
R3
_
VN
VP
VOUT
+
R4
+VS
+VS
VREF
Figure 2. Difference Amplifier
10μF
10μF
High Input Impedance Difference Amplifier
The circuit in Figure 3 is a design example of high input
impedance difference amplifier, the added amplifiers at
the input are used to increase the input impedance and
eliminate drawback of low input impedance in Figure 2.
0.1μF
0.1μF
_
_
VN
VP
VN
VP
VOUT
VOUT
+
+
10μF
-VS (GND)
_
R1
R2
0.1μF
VN
+
-VS
_
Figure 1. Amplifier Power Supply Bypassing
VOUT
+
VP
+
R3
Grounding
_
In low speed application, one node grounding technique
is the simplest and most effective method to eliminate
the noise generated by grounding. In high speed
application, the general method to eliminate noise is to
use a complete ground plane technique, and the whole
ground plane will help distribute heat and reduce EMI
noise pickup.
R4
VREF
Figure 3. High Input Impedance Difference Amplifier
Active Low-Pass Filter
The circuit in Figure 4 is a design example of active
low-pass filter, the DC gain is equal to -R2/R1 and the
-3dB corner frequency is equal to 1/2πR2C. In this design,
the filter bandwidth must be less than the bandwidth of
the amplifier, the resistor values must be selected as
low as possible to reduce ringing or oscillation generated
by the parasitic parameters in PCB layout.
Reduce Input-to-Output Coupling
To reduce the input-to-output coupling, the input traces
must be placed as far away from the power supply or
output traces as possible. The sensitive trace must not
be placed in parallel with the noisy trace in same layer.
They must be placed perpendicularly in different layers
to reduce the crosstalk. These PCB layout techniques
will help to reduce unwanted positive feedback and
noise.
C
R2
R1
_
VIN
VOUT
+
R
3 = R1 // R2
Figure 4. Active Low-Pass Filter
SG Micro Corp
www.sg-micro.com
MARCH 2023
9
SGM8295-1/SGM8295-2
SGM8295-4
9MHz, Low Noise, High Voltage,
Precision Operational Amplifiers
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
MARCH 2023 ‒ REV.A.1 to REV.A.2
Page
Updated Typical Performance Characteristics section.........................................................................................................................................6
AUGUST 2017 ‒ REV.A to REV.A.1
Page
Updated open-loop gain and phase vs. frequency...............................................................................................................................................7
Changes from Original (AUGUST 2017) to REV.A
Page
Changed from product preview to production data.............................................................................................................................................All
SG Micro Corp
www.sg-micro.com
MARCH 2023
10
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
SOT-23-5
1.90
D
e1
2.59
E1
E
0.99
b
e
0.95
0.69
RECOMMENDED LAND PATTERN (Unit: mm)
L
A
A1
c
θ
0.2
A2
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
MIN
MAX
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
c
D
E
E1
e
0.950 BSC
1.900 BSC
0.037 BSC
0.075 BSC
e1
L
0.300
0°
0.600
8°
0.012
0°
0.024
8°
θ
NOTES:
1. Body dimensions do not include mode flash or protrusion.
2. This drawing is subject to change without notice.
SG Micro Corp
TX00033.000
www.sg-micro.com
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
SOIC-8
0.6
D
e
2.2
E1
E
5.2
b
1.27
RECOMMENDED LAND PATTERN (Unit: mm)
L
A
A1
c
θ
A2
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
MIN
MAX
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
c
D
E
E1
e
1.27 BSC
0.050 BSC
L
0.400
0°
1.270
8°
0.016
0°
0.050
8°
θ
NOTES:
1. Body dimensions do not include mode flash or protrusion.
2. This drawing is subject to change without notice.
SG Micro Corp
TX00010.000
www.sg-micro.com
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
MSOP-8
b
E1
E
4.8
1.02
e
0.41
0.65
RECOMMENDED LAND PATTERN (Unit: mm)
D
L
A
c
A1
θ
A2
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
1.100
0.150
0.950
0.380
0.230
3.100
3.100
5.050
MIN
MAX
0.043
0.006
0.037
0.015
0.009
0.122
0.122
0.199
A
A1
A2
b
0.820
0.020
0.750
0.250
0.090
2.900
2.900
4.750
0.032
0.001
0.030
0.010
0.004
0.114
0.114
0.187
c
D
E
E1
e
0.650 BSC
0.026 BSC
L
0.400
0°
0.800
6°
0.016
0°
0.031
6°
θ
NOTES:
1. Body dimensions do not include mode flash or protrusion.
2. This drawing is subject to change without notice.
SG Micro Corp
TX00014.000
www.sg-micro.com
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
SOIC-14
D
E
E1
5.2
2.2
e
b
0.6
1.27
RECOMMENDED LAND PATTERN (Unit: mm)
L1
h
h
L
R1
R
A3
A2
A
L2
θ
A1
Dimensions
Dimensions
In Millimeters
In Inches
Symbol
MIN
1.35
0.10
1.25
0.55
0.36
8.53
5.80
3.80
MAX
1.75
0.25
1.65
0.75
0.49
8.73
6.20
4.00
MIN
MAX
0.069
0.010
0.065
0.030
0.019
0.344
0.244
0.157
A
A1
A2
A3
b
0.053
0.004
0.049
0.022
0.014
0.336
0.228
0.150
D
E
E1
e
1.27 BSC
0.050 BSC
L
0.45
0.80
0.018
0.032
L1
L2
R
1.04 REF
0.25 BSC
0.040 REF
0.01 BSC
0.07
0.07
0.30
0°
0.003
0.003
0.012
0°
R1
h
0.50
8°
0.020
8°
θ
NOTES:
1. Body dimensions do not include mode flash or protrusion.
2. This drawing is subject to change without notice.
SG Micro Corp
TX00011.001
www.sg-micro.com
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
SOT-23-5
SOIC-8
7″
9.5
3.20
6.40
5.20
6.60
3.20
5.40
3.30
9.30
1.40
2.10
1.50
2.10
4.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
2.0
2.0
2.0
2.0
8.0
Q3
Q1
Q1
Q1
13″
13″
13″
12.4
12.4
16.4
12.0
12.0
16.0
MSOP-8
SOIC-14
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
7″ (Option)
368
442
386
227
410
280
224
224
370
8
18
5
7″
13″
SG Micro Corp
www.sg-micro.com
TX20000.000
相关型号：
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