SGM8622XS
更新时间：2024-09-18 06:18:38
品牌：SGMICRO
描述：250レA, 3MHz, Rail-to-Rail I/O CMOS Operational Amplifier
概述
数据手册SGM8622XS 概述
250レA, 3MHz, Rail-to-Rail I/O CMOS Operational Amplifier 250レA，为3MHz ，轨到轨输入/输出CMOS运算放大器
SGM8622XS 数据手册
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PDF下载SGM8621
SGM8622
SGM8623
SGM8624
250µA, 3MHz, Rail-to-Rail I/O
CMOS Operational Amplifier
FEATURES
PRODUCT DESCRIPTION
• Low Cost
TheSGM8621(single), SGM8622 (dual), SGM8623 (single
with shutdown) and SGM8624 (quad) are low noise, low
voltage, and low power operational amplifiers, that can
be designed into a wide range of applications. The
SGM8621/2/3/4 have a high gain-bandwidth product of
3MHz, a slew rate of 1.7V/µs, and a quiescent current of
250µA/amplifier at 5V. The SGM8623 has a power-down
disable feature that reduces the supply current to
150nA.
• Rail-to-Rail Input and Output
0.7mV Typical VOS
• High Gain-Bandwidth Product: 3MHz
• High Slew Rate: 1.7V/µs
• Settling Time to 0.1% with 2V Step: 2.1 µs
• Overload Recovery Time: 1µs
• Low Noise : 12 nV/
Hz
• Operates on 2.5 V to 5.5V Supplies
• Input Voltage Range = - 0.1 V to +5.6 V with VS = 5.5 V
• Low Power
250µA/Amplifier Typical Supply Current
SGM8623 150nA when Disabled
• Small Packaging
The SGM8621/2/3/4 are designed to provide optimal
performance in low voltage and low noise systems.
They provide rail-to-rail output swing into heavy loads.
The input common-mode voltage range includes
ground, and the maximum input offset voltage is 3mV
for SGM8621/2/3/4. They are specified over the extended
industrial temperature range (−40°C to +125°C). The
operating range is from 2.5V to 5.5V.
SGM8621 Available in SC70-5, SOT23-5 and SO-8
SGM8622 Available in MSOP-8 and SO-8
SGM8623 Available in SOT23-6and SO-8
SGM8624 Available in TSSOP-16 and SO-16
The single version, SGM8621/8623, is available in SC70-5,
SO-8 and SOT23-5(6) packages. The dual version
SGM8622 is available in SO-8 and MSOP-8 packages.
The quad version SGM8624 is available in SO-16 and
TSSOP-16 packages.
PIN CONFIGURATIONS (Top View)
SGM8621
SGM8621/8623
OUT
-VS
+VS
-IN
1
2
5
4
DISABLE
8
7
6
5
NC
-IN
+IN
-VS
1
2
3
4
(SGM8623 ONLY)
+VS
OUT
NC
3
+IN
APPLICATIONS
Sensors
Audio
Active Filters
A/D Converters
Communications
Test Equipment
Cellular and Cordless Phones
Laptops and PDAs
Photodiode Amplification
Battery-Powered Instrumentation
SOT23-5 /SC70-5
NC = NO CONNECT
SO-8
SGM8623
OUT
-VS
6
5
4
+VS
1
2
3
SGM8624
DISABLE
-IN
16
1
OUT D
-IND
OUT A
-IN A
+IN
2
3
4
5
6
15
14
SOT23-6
+IN A
+VS
+IND
SGM8622
13 -VS
8
7
6
5
+VS
OUTA
1
2
3
12 +INC
+INB
OUT B
-IN B
+IN B
-IN A
+IN A
-VS
11
-INC
-INB
OUT B
NC
OUT C
NC
7
8
10
9
4
NC = NO CONNECT
TSSOP-16 / SO-16
SO-8 / MSOP-8
Shengbang Microelectronics Co, Ltd
Tel: 86/451/84348461
REV. B
www.sg-micro.com
ELECTRICAL CHARACTERISTICS :VS = +5V
(At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted)
SGM8621/2/3/4
MIN/MAX OVER TEMPERATURE
TYP
PARAMETER
CONDITION
0℃ to -40℃
-40℃ to
125℃
MIN/
+25℃
+25℃
70℃
to 85℃
UNITS MAX
INPUT CHARACTERISTICS
Input Offset Voltage (VOS
Input Bias Current (IB)
)
0.7
1
1
3
3.1
3.3
3.5
mV
pA
pA
V
dB
dB
dB
dB
µV/℃
MAX
TYP
TYP
TYP
MIN
MIN
MIN
MIN
TYP
Input Offset Current (IOS
)
Common-Mode Voltage Range (VCM
Common-Mode Rejection Ratio(CMRR) VS = 5.5V, VCM = - 0.1V to 4 V
VS = 5.5V, VCM = - 0.1V to 5.6 V
)
VS = 5.5V
-0.1 to +5.6
90
75
66
92
74
65
90
99
73
65
89
98
73
64
78
82
92
Open-Loop Voltage Gain( AOL
)
RL = 600Ω,Vo = 0.15V to 4.85V
RL =10KΩ,Vo = 0.05V to 4.95V
100
110
2.7
100
Input Offset Voltage Drift (∆VOS/∆T)
OUTPUT CHARACTERISTICS
Output Voltage Swing from Rail
RL = 600Ω
RL = 10KΩ
0.1
0.015
48
V
V
mA
Ω
TYP
TYP
MIN
TYP
Output Current (IOUT
)
45
42
40
30
Closed-Loop Output Impedance
F = 100KHz, G = +1
2.6
POWER-DOWN DISABLE
Turn-On Time
Turn-Off Time
6.2
1.4
ns
ns
V
TYP
TYP
MAX
MIN
DISABLE
Voltage-Off
0.8
2
DISABLE
Voltage-On
V
POWER SUPPLY
Operating Voltage Range
2.5
5.5
2.5
5.5
2.5
5.5
2.5
5.5
V
V
MIN
MAX
Power Supply Rejection Ratio (PSRR)
Vs = +2.5 V to + 5.5 V
VCM = (-VS) + 0.5V
94
250
79
300
78
345
77
350
76
380
dB
µA
MIN
MAX
Quiescent Current/ Amplifier (IQ)
Supply Current when Disabled
(SGM8623 only)
I
OUT = 0
150
nA
MAX
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Phase Margin(φO)
Full Power Bandwidth(BWP)
Slew Rate (SR)
RL = 10KΩ
3
MHz
degrees TYP
KHz
V/µs
µs
TYP
67
50
1.7
2.1
1
＜1% distortion, RL = 600Ω
G = +1 , 2V Step, RL = 10KΩ
G = +1, 2 V Step, RL = 600Ω
TYP
TYP
TYP
TYP
Settling Time to 0.1%( tS)
Overload Recovery Time
VIN ·Gain = Vs, RL = 600Ω
µs
NOISE PERFORMANCE
Voltage Noise Density (en)
Current Noise Density( in)
f = 1kHz
f = 1kHz
12
3
nV/
fA/
TYP
TYP
Hz
Hz
Specifications subject to change without notice.
２
SGM8621/2/3/4
PACKAGE/ORDERING INFORMATION
ORDER
NUMBER
PACKAGE
DESCRIPTION
PACKAGE
OPTION
MARKING
INFORMATION
MODEL
SGM8621XC5/TR
SGM8621XN5/TR
SGM8621XS/TR
SGM8622XMS/TR
SGM8622XS/TR
SGM8623XN6/TR
SGM8623XS/TR
SGM8624XS/TR
SGM8624XTS
SC70-5
SOT23-5
SO-8
Tape and Reel, 3000
Tape and Reel, 3000
Tape and Reel, 2500
Tape and Reel, 3000
Tape and Reel, 2500
Tape and Reel, 3000
Tape and Reel, 2500
Tape and Reel, 2500
Tape and Reel, 3000
8621
SGM8621
8621
SGM8621XS
SGM8622XMS
SGM8622XS
8623
MSOP-8
SO-8
SGM8622
SGM8623
SGM8624
SOT23-6
SO-8
SGM8623XS
SGM8624XS
SGM8624XTS
SO-16
TSSOP-16
CAUTION
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V+ to V- ............................................ 7.5 V
Common-Mode Input Voltage
This integrated circuit can be damaged by ESD.
Shengbang Micro-electronics recommends that all
integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and
installation procedures can cause damage.
.................................... (–V
S
) – 0.5 V to (+V ) +0.5V
S
Storage Temperature Range..................... –65℃ to +150℃
Junction Temperature.................................................160℃
Operating Temperature Range.................–55℃ to +150℃
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to
damage because very small parametric changes could
cause the device not to meet its published
specifications.
Package Thermal Resistance @ T = 25℃
A
SC70-5, θJA................................................................ 333℃/W
SOT23-5, θJA.............................................................. 190℃/W
SOT23-6, θJA.............................................................. 190℃/W
SO-8, θJA......................................................................125℃/W
MSOP-8, θJA.............................................................. 216℃/W
SO-16, θJA..................................................................... 82℃/W
TSSOP-16, θJA............................................................ 105℃/W
Lead Temperature Range (Soldering 10 sec)
.....................................................260℃
ESD Susceptibility
HBM................................................................................1500V
MM....................................................................................400V
NOTES
1. Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
３
SGM8621/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
(At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted)
Closed-Loop Output Voltage Swing
Output Impedance vs.Frequency
6
5
4
3
2
1
0
140
120
100
80
Vs=5V
Vs=5V
VIN =4.9VP-P
TA =25℃
RL =10KΩ
G=1
G =100
60
G =10
40
G =1
20
0
0.1
1
10 100
Frequency(kHz)
1000
10000
10
100
1000
10000
Frequency(kHz)
Positive Overload Recovery
Vs = ±2.5V
VIN = 50mV
RL = 620Ω
G = 100
Negative Overload Recovery
Vs = ±2.5V
VIN = 50mV
RL = 620Ω
G = 100
2.5V
2.5V
0V
0V
0V
0V
-50mV
-50mV
Time(5µs/div)
Time(1µs/div)
Large-Signal Step Response
Small-Signal Step Response
Vs = 5V
G = +1
CL = 100pF
RL = 620Ω
Vs = 5V
G = +1
CL = 100pF
RL = 620Ω
Time(100µs/div)
Time(100µs/div)
４
SGM8621/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
(At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted)
CMRR vs.Frequency
PSRR vs.Frequency
120
100
80
110
100
90
80
70
60
50
40
30
20
Vs=5V
Vs=5V
60
40
20
1
10
100
1000
0.01
0.1
1
10
100
1000
Frequency(kHz)
Frequency(kHz)
Small-Signal Overshoot vs.Load Capacitance
Channel Separation vs.Frequency
70
60
50
40
30
20
10
0
140
130
120
110
100
90
Vs=5V
RL =10kΩ
TA =25℃
Vs=5V
RL =620Ω
TA =25℃
G=1
G=1
+OS
-OS
80
1
10
100
Load Capacitance(pF)
1000
10000
0.1
1
10
100
1000
Frequency(kHz)
PSRR vs.Temperature
CMRR vs.Temperature
120
120
VS = 5.5V
VS = 2.5V to 5.5V
110
100
90
110
100
90
VCM = - 0.1V to 4 V
80
80
VCM = - 0.1V to 5.6V
70
70
60
60
-50 -30 -10 10 30 50 70 90 110 130
Temperature(℃)
-50 -30 -10 10 30 50 70 90 110 130
Temperature(℃)
５
SGM8621/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
(At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted)
Open-Loop Gain vs.Temperature
Supply Current vs.Temperature
120
110
100
90
350
325
300
275
250
225
200
175
150
RL=10KΩ
RL=600Ω
VS = 2.5V
VS = 3V
80
VS = 5V
70
-50 -30 -10 10 30 50 70 90 110 130
Temperature(℃)
-50 -30 -10 10 30 50 70 90 110 130
Temperature(℃)
Output Voltage Swing vs.Output Current
Sourcing Current
Shutdown Current vs.Temperature
5
4
3
2
1
0
210
180
150
120
90
VS = 5V
135℃
-50℃
25℃
VS = 5V
135℃
VS = 3V
25℃
-50℃
60
VS = 2.5V
30
Sinking Current
0
-50 -30 -10 10 30 50 70 90 110 130
Temperature(℃)
0
10
20
30
40
Output Current(mA)
50
60
70
Output Voltage Swing vs.Output Current
Sourcing Current
Closed-Loop Output Voltage Swing
3
2
1
0
3
2.5
2
VS = 3V
1.5
1
135℃
-50℃
25℃
Vs=2.7V
VIN =2.6VP-P
TA =25℃
RL =10KΩ
G=1
0.5
0
Sinking Current
0
10
20
30
40
50
10
100
1000
10000
Frequency(kHz)
Output Current(mA)
６
SGM8621/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
(At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted)
Output Impedance vs.Frequency
Small-Signal Overshoot vs.Load Capacitance
140
120
100
80
70
60
50
40
30
20
10
0
Vs=2.7V
Vs=2.7V
RL =10kΩ
TA =25℃
G=1
+OS
-OS
60
G =100
G =10
40
G =1
20
0
0.1
1
10 100
Frequency(kHz)
1000
10000
1
10
100
Load Capacitance(pF)
1000
10000
Input Voltage Noise Spectral Density
vs.Frequency
Channel Separation vs.Frequency
1000
140
130
120
110
100
90
Vs=5V
Vs=2.7V
RL =620Ω
TA =25℃
G=1
100
80
10
0.1
1
10
100
1000
1
10
100
1000
10000
Frequency(kHz)
Frequency(Hz)
Large-Signal Step Response
Small-Signal Step Response
Vs = 2.7V
G = +1
CL = 100pF
RL = 620Ω
Vs = 2.7V
G = +1
CL = 100pF
RL = 620Ω
Time(100µs/div)
Time(100µs/div)
７
SGM8621/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
(At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted)
Offset Voltage Production Distribution
35
Typical production
distribution of
packaged units.
30
25
20
15
10
5
0
Offset Voltage(mV)
８
SGM8621/2/3/4
Power-Supply Bypassing and Layout
APPLICATION NOTES
Driving Capacitive Loads
The SGM862x family operates from either a single +2.5V to
+5.5V supply or dual ±1.25V to ±2.75V supplies. For
single-supply operation, bypass the power supply VDD with a
0.1µF ceramic capacitor which should be placed close to the
VDD pin. For dual-supply operation, both the VDD and the VSS
supplies should be bypassed to ground with separate 0.1µF
The SGM862x can directly drive 1000pF in unity-gain without
oscillation. The unity-gain follower (buffer) is the most sensitive
configuration to capacitive loading. Direct capacitive loading
reduces the phase margin of amplifiers and this results in
ringing or even oscillation. Applications that require greater
capacitive drive capability should use an isolation resistor
between the output and the capacitive load like the circuit in
Figure 1. The isolation resistor RISO and the load capacitor CL
form a zero to increase stability. The bigger the RISO resistor
value, the more stable VOUT will be. Note that this method
results in a loss of gain accuracy because RISO forms a voltage
ceramic capacitors. 2.2µF tantalum capacitor can be added for
better performance.
Good PC board layout techniques optimize performance by
decreasing the amount of stray capacitance at the op amp’s
inputs and output. To decrease stray capacitance, minimize
trace lengths and widths by placing external components as
close to the device as possible. Use surface-mount
components whenever possible.
divider with the RLOAD
.
For the operational amplifier, soldering the part to the board
directly is strongly recommended. Try to keep the high
frequency big current loop area small to minimize the EMI
(electromagnetic interfacing).
RISO
SGM8621
VOUT
VIN
CL
VDD
10µF
VDD
10µF
0.1µF
Figure 1. Indirectly Driving Heavy Capacitive Load
0.1µF
An improvement circuit is shown in Figure 2. It provides DC
accuracy as well as AC stability. RF provides the DC accuracy
by connecting the inverting signal with the output. CF and RIso
serve to counteract the loss of phase margin by feeding the
high frequency component of the output signal back to the
amplifier’s inverting input, thereby preserving phase margin in
the overall feedback loop.
Vn
Vp
VOUT
Vn
Vp
SGM8621
VOUT
SGM8621
10µF
CF
0.1µF
VSS(GND)
RF
RISO
SGM8621
VOUT
VSS
VIN
CL
RL
Figure 3. Amplifier with Bypass Capacitors
Figure 2. Indirectly Driving Heavy Capacitive Load with DC
Accuracy
Grounding
A ground plane layer is important for SGM862x circuit design.
The length of the current path speed currents in an inductive
ground return will create an unwanted voltage noise. Broad
ground plane areas will reduce the parasitic inductance.
For no-buffer configuration, there are two others ways to
increase the phase margin: (a) by increasing the amplifier’s
gain or (b) by placing a capacitor in parallel with the feedback
resistor to counteract the parasitic capacitance associated with
inverting node.
Input-to-Output Coupling
To minimize capacitive coupling, the input and output signal
traces should not be parallel. This helps reduce unwanted
positive feedback.
９
SGM8621/2/3/4
Typical Application Circuits
C
Differential Amplifier
R2
The circuit shown in Figure 4 performs the difference function.
If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then
VOUT = ( Vp – Vn ) × R2 / R1 + Vref.
R1
VIN
VOUT
SGM8621
R2
R1
Vn
VOUT
R3=R1//R2
SGM8621
Vp
R3
Figure 6. Low Pass Active Filter
R4
Vref
Figure 4. Differential Amplifier
Instrumentation Amplifier
The circuit in Figure 5 performs the same function as that in
Figure 4 but with the high input impedance.
R2
R1
SGM8621
Vn
SGM8621
VOUT
Vp
R3
R4
SGM8621
Vref
Figure 5. Instrumentation Amplifier
Low Pass Active Filter
The low pass filter shown in Figure 6 has a DC gain of (-R2/R1)
and the –3dB corner frequency is 1/2πR2C. Make sure the filter
is within the bandwidth of the amplifier. The Large values of
feedback resistors can couple with parasitic capacitance and
cause undesired effects such as ringing or oscillation in
high-speed amplifiers. Keep resistors value as low as possible
and consistent with output loading consideration.
１０
SGM8621/2/3/4
PACKAGE OUTLINE DIMENSIONS
SC70-5
D
e1
θ
Dimensions
Dimensions
In Inches
Symbol
In Millimeters
e
Min
0.900
0.000
0.900
0.150
0.080
Max
1.100
0.100
1.000
0.350
0.150
Min
0.035
0.000
0.035
0.006
0.003
Max
0.043
0.004
0.039
0.014
0.006
A
A1
A2
b
c
D
E
E1
e
2.000
1.150
2.150
2.200
1.350
2.450
0.079
0.045
0.085
0.087
0.053
0.096
b
0.20
C
0.650TYP
0.026TYP
e1
L
1.200
1.400
0.047
0.055
0.525REF
0.021REF
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
１１
SGM8621/2/3/4
PACKAGE OUTLINE DIMENSIONS
SOT23-5
D
θ
Dimensions
Dimensions
In Inches
0.20
0
Symbol
In Millimeters
b
Min
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max
1.250
0.100
1.150
0.400
0.200
3.020
1.700
2.950
Min
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
Max
0.049
0.004
0.045
0.016
0.008
0.119
0.067
0.116
A
A1
A2
b
c
D
e
E
E1
C
e1
e
0.950TYP
0.037TYP
e1
L
1.800
2.000
0.071
0.028REF
0.079
0.700REF
L1
θ
0.300
0°
0.600
8°
0.012
0°
0.024
8°
１２
SGM8621/2/3/4
PACKAGE OUTLINE DIMENSIONS
SOT23-6
Dimensions
Dimensions
In Inches
D
e1
Symbol
In Millimeters
θ
Min
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max
1.250
0.100
1.150
0.400
0.200
3.020
1.700
2.950
Min
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
Max
0.049
0.004
0.045
0.016
0.008
0.119
0.067
0.116
0.20
e
0
A
A1
A2
b
c
D
E
E1
e
b
C
0.950TYP
0.037TYP
e1
L
1.800
2.000
0.071
0.028REF
0.079
0.700REF
L1
θ
0.300
0°
0.600
8°
0.012
0°
0.024
8°
１３
SGM8621/2/3/4
PACKAGE OUTLINE DIMENSIONS
SO-8
D
Dimensions
Dimensions
In Inches
C
Symbol
In Millimeters
Min
1.350
0.100
1.350
0.330
0.190
4.780
3.800
5.800
Max
1.750
0.250
1.550
0.510
0.250
5.000
4.000
6.300
Min
0.053
0.004
0.053
0.013
0.007
0.188
0.150
0.228
Max
0.069
0.010
0.061
0.020
0.010
0.197
0.157
0.248
A
A1
A2
B
C
D
E
E1
e
θ
e
1.270TYP
0.050TYP
B
L
θ
0.400
0°
1.270
8°
0.016
0°
0.050
8°
１４
SGM8621/2/3/4
PACKAGE OUTLINE DIMENSIONS
MSOP-8
C
b
Dimensions
Dimensions
In Inches
Symbol In Millimeters
Min
0.800
0.000
0.760
Max
1.200
0.200
0.970
Min
0.031
0.000
0.030
Max
0.047
0.008
0.038
A
A1
A2
b
0.30 TYP
0.15 TYP
2.900 3.100
0.65 TYP
0.012 TYP
0.006 TYP
0.114 0.122
0.026 TYP
c
θ
D
e
e
E
2.900
3.100
5.100
0.650
6°
0.114
0.122
0.201
0.026
6°
A2
A
E1
L
4.700
0.410
0°
0.185
0.016
0°
θ
D
１５
SGM8621/2/3/4
PACKAGE OUTLINE DIMENSIONS
SO-16
D
C
Dimensions
Dimensions
In Inches
Symbol
In Millimeters
Min
1.350
0.100
1.350
0.330
0.170
9.800
3.800
5.800
Max
1.750
0.250
1.550
0.510
0.250
10.20
4.000
6.200
Min
0.053
0.004
0.053
0.013
0.007
0.386
0.150
0.228
Max
0.069
0.010
0.061
0.020
0.010
0.402
0.157
0.244
A
A1
A2
b
c
θ
D
E
e
E1
e
1.270 (BSC)
0.050 (BSC)
L
θ
0.400
0°
1.270
8°
0.016
0°
0.050
8°
b
１６
SGM8621/2/3/4
PACKAGE OUTLINE DIMENSIONS
TSSOP-16
A
b
Dimensions
Dimensions
In Inches
Symbol In Millimeters
Min
4.900
4.300
0.190
0.090
6.250
Max
5.100
4.500
0.300
0.200
6.550
1.100
1.000
0.150
Min
0.193
0.169
0.007
0.004
0.246
Max
0.201
0.177
0.012
0.008
0.258
0.043
0.039
0.006
D
E
b
PIN #1 IDENT.
c
A2
A
E1
A
e
A2
A1
e
0.800
0.020
0.031
0.001
C
θ
0.65 (BSC)
0.026 (BSC)
L
H
θ
0.500
0.700
0.020
0.028
7°
A
0.25(TYP)
0.01(TYP)
D
1°
7°
1°
H
A1
１７
SGM8621/2/3/4
REVISION HISTORY
Location
Page
11/06— Data Sheet changed from REV.A to REV.B
Added SC70-5 PACKAGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Universal
Changes to PRODUCT DESCRIPTION, FEATURES, and PIN CONFIGURATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Updated PACKAGE/ORDERING INFORMATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Changes to ABSOLUTE MAXIMUM ATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Shengbang Microelectronics Co, Ltd
Unit 3, ChuangYe Plaza
No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park
Harbin Development Zone
Harbin, HeiLongJiang 150078
P.R. China
Tel.: 86-451-84348461
Fax: 86-451-84308461
www.sg-micro.com
１８
SGM8621/2/3/4
SGM8622XS 相关器件
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