SGMNM12330 [SGMICRO]
30V, Power, Single N-Channel, TDFN Package, MOSFET;
| 型号： | SGMNM12330 |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | 30V, Power, Single N-Channel, TDFN Package, MOSFET |
| 文件： | 总9页 (文件大小：550K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGMNM12330
30V, Power, Single N-Channel,
TDFN Package, MOSFET
GENERAL DESCRIPTION
PRODUCT SUMMARY
RDS(ON) (TYP)
RDS(ON) (MAX)
ID (MAX)
The SGMNM12330 is a power MOSFET with low gate
charge and a low on-state resistance. This feature
makes it a good choice for load switches and PWM
applications.
9mΩ
11.5mΩ
10A
PIN CONFIGURATIONS
FEATURES
(TOP VIEW)
(TOP VIEW)
● High Power and Current Handing Capability
● Low On-State Resistance
1
6
1
6
D
D
G
D
D
S
D
D
G
D
D
S
D
S
D
● Low Total Gate Charge and Capacitance Losses
● RoHS Compliant and Halogen Free
2
3
5
4
2
3
5
4
S
APPLICATIONS
TDFN-2×2-6BL
TDFN-2×2-6CL
PWM Applications
Power Load Switch
Battery Management
Wireless Chargers
EQUIVALENT CIRCUIT
D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (DC)
Continuous Drain Current (Pulse)
Total Dissipation
SYMBOL
VDS
VGS
ID
VALUE
30
UNITS
V
±20
V
10
A
G
ID
40
A
PD
2.4
W
Avalanche Current
IAS
26
A
S
Avalanche Energy
EAS
TJ
33.8
+150
-55 to +150
+260
mJ
℃
℃
℃
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10s)
TSTG
Stresses beyond those listed in Absolute Maximum Ratings may
cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
SG Micro Corp
OCTOBER2022–REV. A
www.sg-micro.com
30V, Power, Single N-Channel,
TDFN Package, MOSFET
SGMNM12330
PACKAGE/ORDERING INFORMATION
SPECIFIED
PACKAGE
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
TEMPERATURE
RANGE
DESCRIPTION
TDFN-2×2-6BL
TDFN-2×2-6CL
SZN
XXXX
SGMNM12330TTEN6G/TR
SGMNM12330TTEO6G/TR
Tape and Reel, 3000
Tape and Reel, 3000
-55℃ to +150℃
-55℃ to +150℃
SGMNM12330
SZP
XXXX
MARKING INFORMATION
NOTE: XXXX = Date Code, Trace Code and Vendor Code.
Serial Number
Y Y Y
X X X X
Vendor Code
Trace Code
Date Code - Year
Green (RoHS & HF): SG Micro Corp defines "Green" to mean RoHS Compliant and Halogen Free.
DISCLAIMER
SG Micro Corp reserves the right to make any change in circuit design, or specifications without prior notice.
THERMAL RESISTANCE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNITS
Junction-to-Ambient Thermal Resistance
RθJA
56
℃/W
SG Micro Corp
www.sg-micro.com
OCTOBER 2022
2
30V, Power, Single N-Channel,
TDFN Package, MOSFET
SGMNM12330
ELECTRICAL CHARACTERISTICS
(TA = +25℃, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX UNITS
Static OFF Characteristics
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Static ON Characteristics
Gate Threshold Voltage
V(BR)DSS ID = 250µA, VGS = 0V
30
V
IDSS
IGSS
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
1
µA
nA
±100
VGS(TH)
RDS(ON)
VGS = VDS, ID = 250µA
ID = 9A, VGS = 10V
1
1.5
9
2.0
11.5
14.3
V
Drain-to-Source
On-State Resistance
mΩ
ID = 7A, VGS = 4.5V
11
16
1.0
Forward Transconductance
Gate Resistance
gFS
RG
VDS = 5V, ID = 9A
S
VGS = 0V, VDS = 0V, f = 1MHz
Ω
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics
Input Capacitance
VF(SD)
tRR
VGS = 0V, IS = 1A
0.7
16.7
7.5
1.2
V
ns
nC
IS = 5A, VGS = 0V, di/dt = 100A/μs
QRR
CISS
COSS
CRSS
QG
1629
191
160
33.9
5.8
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
V
DS = 15V, VGS = 0V, f = 1MHz
DS = 15V, VGS = 10V, ID = 6A
pF
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Switch Characteristics
Turn-On Delay Time
Rise Time
QGS
QGD
6
tD(ON)
tR
tD(OFF)
tF
11.2
3.5
V
DS = 15V, VGS = 10V, ID = 5A, RG = 3Ω
ns
Turn-Off Delay Time
Fall Time
42.3
4.4
SG Micro Corp
www.sg-micro.com
OCTOBER 2022
3
30V, Power, Single N-Channel,
TDFN Package, MOSFET
SGMNM12330
TYPICAL PERFORMANCE CHARACTERISTICS
Output Characteristics
Drain-Source On-State Resistance
TJ = +25℃
40
32
24
16
8
13
12
11
10
9
VGS = 10V
VGS = 5V
VGS = 4.5V
VGS = 4.5V
VGS = 10V
10
VGS = 3V
VGS = 2.5V
0
8
0.0
0.8
1.6
2.4
3.2
4.0
0
5
15
20
25
Drain Current (A)
Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Diode Forward
40
10
8
6
4
2
0
32
24
16
8
TJ = +150℃
TJ = +150℃
TJ = +25℃
TJ = +25℃
ID = 9A
0
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Gate-to-Source Voltage (V)
Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Gate-to-Source Voltage vs. Junction Temperature
1.6
1.4
1.2
1.0
0.8
0.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25
0
25 50 75 100 125 150 175
-75 -50 -25
0
25 50 75 100 125 150 175
Junction Temperature (℃)
Junction Temperature (℃)
SG Micro Corp
www.sg-micro.com
OCTOBER 2022
4
30V, Power, Single N-Channel,
TDFN Package, MOSFET
SGMNM12330
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Gate Charge Characteristics
Capacitance Characteristics
10
8
2500
2000
1500
1000
500
VDS = 15V
ID = 6A
f = 1MHz
CISS
6
4
2
COSS
CRSS
0
0
0
10
20
30
40
0
5
10
15
20
25
30
Total Gate Charge (nC)
Drain-to-Source Voltage (V)
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (OCTOBER 2022) to REV.A
Page
Changed from product preview to production data .................................................................................................................................................All
SG Micro Corp
www.sg-micro.com
OCTOBER 2022
5
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
TDFN-2×2-6BL
D
e
N6
k1
L
D1
D2
E
E1
L2
E2
L1
L3
k2
k
N1
PIN 1#
b
DETAIL A
BOTTOM VIEW
TOP VIEW
A
0.475
0.70
0.15
0.95
A1
A2
0.36
0.37
1.925 1.15
SIDE VIEW
0.365
ALTERNATE A-1
ALTERNATE A-2
0.65
0.30
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTION
RECOMMENDED LAND PATTERN (Unit: mm)
Dimensions In Millimeters
Symbol
MIN
MOD
0.750
MAX
0.800
0.050
A
A1
A2
b
0.700
0.000
0.020
0.200 REF
0.300
0.250
1.900
1.900
0.850
1.050
0.315
0.650
0.350
2.100
2.100
1.050
1.250
0.415
0.750
D
2.000
E
2.000
D1
E1
D2
E2
e
0.950
1.150
0.365
0.700
0.650 BSC
0.370 REF
0.150 REF
0.360 REF
0.275
k
k1
k2
L
0.225
0.325
L1
L2
L3
0.125 REF
0.200 REF
0.200 REF
NOTE: This drawing is subject to change without notice.
SG Micro Corp
TX00228.000
www.sg-micro.com
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
TDFN-2×2-6CL
D
D3
D1
L1
b
N6
L
D2
E
E2
E1
k
k1
N1
e
PIN 1#
DETAIL A
e1
BOTTOM VIEW
TOP VIEW
0.30
0.455
A
0.89
1.50
0.30
0.60
A1
A2
1.945
SIDE VIEW
0.35
0.445
ALTERNATE A-1
ALTERNATE A-2
0.65
DETAIL A
1.30
ALTERNATE TERMINAL
CONSTRUCTION
RECOMMENDED LAND PATTERN (Unit: mm)
Dimensions In Millimeters
Symbol
MIN
MOD
0.750
MAX
0.800
0.050
A
A1
A2
b
0.700
0.000
0.020
0.200 REF
0.300
0.250
1.900
1.900
0.790
1.400
0.200
0.500
0.350
2.100
2.100
0.990
1.600
0.400
0.700
D
2.000
E
2.000
D1
E1
D2
E2
D3
e
0.890
1.500
0.300
0.600
0.950 REF
0.650 BSC
1.300 BSC
0.350 REF
0.445 REF
0.255
e1
k
k1
L
0.180
0.355
L1
0.200 REF
NOTE: This drawing is subject to change without notice.
SG Micro Corp
TX00229.000
www.sg-micro.com
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
TDFN-2×2-6BL
TDFN-2×2-6CL
7″
7″
9.5
9.5
2.30
2.30
2.30
2.30
1.00
1.00
4.0
4.0
4.0
4.0
2.0
2.0
8.0
8.0
Q1
Q1
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
7″ (Option)
7″
368
442
227
410
224
224
8
18
SG Micro Corp
www.sg-micro.com
TX20000.000
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