SGM2015-2.8YN5/TR [SGMICRO]

Low Power, Low Dropout, 250mA, RF - Linear Regulators; 低功耗,低压差, 250毫安, RF - 线性稳压器
SGM2015-2.8YN5/TR
元器件型号: SGM2015-2.8YN5/TR
生产厂家: Shengbang Microelectronics Co, Ltd    Shengbang Microelectronics Co, Ltd
描述和应用:

Low Power, Low Dropout, 250mA, RF - Linear Regulators
低功耗,低压差, 250毫安, RF - 线性稳压器

稳压器
PDF文件: 总11页 (文件大小:561K)
下载文档:  下载PDF数据表文档文件
型号参数:SGM2015-2.8YN5/TR参数

SGM2015-3.0

Low Power, Low Dropout, 250mA, RF - Linear Regulators

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20 SGMICRO

SGM2015-3.0YN5/TR

Low Power, Low Dropout, 250mA, RF - Linear Regulators

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28 SGMICRO

SGM2015-3.3

Low Power, Low Dropout, 250mA, RF - Linear Regulators

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33 SGMICRO

SGM2015-3.3YN5/TR

Low Power, Low Dropout, 250mA, RF - Linear Regulators

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42 SGMICRO

SGM2016

GaAs N-channel Dual-Gate MES FET

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15 SONY

SGM2016

GaAs N-channel Dual-Gate MES FET

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30 SONY

SGM2016

GaAs N-channel Dual-Gate MES FET

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20 SONY

SGM2016

GaAs N-channel Dual-Gate MES FET

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8 SONY

SGM2016

GaAs N-channel Dual-Gate MES FET

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11 SONY

SGM2016AM

GaAs N-channel Dual-Gate MES FET

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54 SONY

SGM2016AM

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, M254, 4 PIN

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0 SONY

SGM2016AN

GaAs N-channel Dual-Gate MES FET

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25 SONY

SGM2016AP

GaAs N-channel Dual-Gate MES FET

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18 SONY

SGM2016AP

GaAs N-channel Dual-Gate MES FET

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10 SONY

SGM2016AP

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, M255, 4 PIN

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0 SONY